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IPP65R095C7XKSA1

IPP65R095C7XKSA1
Mfr. #:
IPP65R095C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP65R095C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP65R095C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
84 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
128 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
IPP65R095C7 SP001080122
Unidad de peso:
0.211644 oz
Tags
IPP65R09, IPP65R0, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220
***et Europe
Trans MOSFET N-CH 700V 24A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 650V TO-220-3
***ukat
N-Ch 650V 24A 128W 0,095R TO220
***ronik
N-CH 650V 24A 95mOhm TO220
***ark
HIGH POWER_NEW
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 24A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:128W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 24A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.084ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:128W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPP65R095C7XKSA1
DISTI # V99:2348_06377348		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube500
  • 500:$3.1620
  • 250:$3.5620
  • 100:$3.7890
  • 50:$4.2160
  • 25:$4.4570
  • 10:$4.5020
  • 1:$5.8674
IPP65R095C7XKSA1
DISTI # V36:1790_06377348		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube0
  • 500000:$2.3670
  • 250000:$2.3690
  • 50000:$2.5450
  • 5000:$2.8410
  • 500:$2.8900
IPP65R095C7XKSA1
DISTI # IPP65R095C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$2.8374
  • 500:$3.5414
  • 100:$4.1601
  • 25:$4.8000
  • 10:$5.0770
  • 1:$5.6500
IPP65R095C7XKSA1
DISTI # 33629041		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube500
  • 3:$5.8674
IPP65R095C7XKSA1
DISTI # IPP65R095C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 24A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R095C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 500
  • 5000:$2.4900
  • 3000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
  • 500:$2.8900
IPP65R095C7XKSA1
DISTI # IPP65R095C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 24A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R095C7XKSA1)
RoHS: Compliant
Min Qty: 135
Container: Bulk		Americas - 0
  • 1350:$2.2900
  • 405:$2.3900
  • 675:$2.3900
  • 270:$2.4900
  • 135:$2.5900
IPP65R095C7XKSA1
DISTI # SP001080122		Infineon Technologies AGTrans MOSFET N-CH 700V 24A 3-Pin TO-220 Tube (Alt: SP001080122)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.7900
  • 1:€2.9900
IPP65R095C7XKSA1
DISTI # 13AC9084		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes457
  • 500:$3.7400
  • 250:$4.1800
  • 100:$4.4000
  • 50:$4.6200
  • 25:$4.8500
  • 10:$5.0800
  • 1:$5.9600
IPP65R095C7
DISTI # 726-IPP65R095C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		2000
  • 1:$5.3700
  • 10:$4.5700
  • 100:$3.9600
  • 250:$3.7600
  • 500:$3.3700
IPP65R095C7XKSA1
DISTI # 726-IPP65R095C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		501
  • 1:$5.3700
  • 10:$4.5700
  • 100:$3.9600
  • 250:$3.7600
  • 500:$3.3700
IPP65R095C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6
  • 1000:$2.4500
  • 500:$2.5800
  • 100:$2.6800
  • 25:$2.8000
  • 1:$3.0100
IPP65R095C7XKSA1
DISTI # IPP65R095C7		Infineon Technologies AGN-Ch 650V 24A 128W 0,095R TO220
RoHS: Compliant		500
  • 1:€6.9000
  • 10:€3.9000
  • 50:€2.9000
  • 100:€2.6500
IPP65R095C7XKSA1
DISTI # 2726070		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-220-31457
  • 100:£3.5900
  • 10:£4.1500
  • 1:£5.4100
IPP65R095C7XKSA1
DISTI # 2726070		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-220-3
RoHS: Compliant		957
  • 25:$7.2400
  • 10:$7.6600
  • 1:$8.5100
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Disponibilidad
Valores:
501
En orden:
2484
Ingrese la cantidad:
El precio actual de IPP65R095C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,37 US$
5,37 US$
10
4,57 US$
45,70 US$
100
3,96 US$
396,00 US$
250
3,76 US$
940,00 US$
500
3,37 US$
1 685,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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