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NTMS4800NR2G

NTMS4800NR2G
Mfr. #:
NTMS4800NR2G
Fabricante:
ON Semiconductor
Descripción:
MOSFET 30V 8A 0.020OHM N-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTMS4800NR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4800NR2G DatasheetNTMS4800NR2G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
20 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.5 mm
Longitud:
5 mm
Tipo de transistor:
1 N-Channel
Ancho:
4 mm
Marca:
EN Semiconductor
Otoño:
6.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
9.4 ns
Unidad de peso:
0.006596 oz
Tags
NTMS480, NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
***emi
Power MOSFET, 30 V, 8.0 A, N-Channel
***th Star Micro
Power MOSFET 30V 8A N Channel SOIC8
***ark
N Channel Mosfet, 30V, 6.4A, Soic, Full Reel
***r Electronics
Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Stop Electro
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***et Europe
Trans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R
***ure Electronics
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
***ark
DUAL MOSFET, COMPLEMENT, 30V, 8.5A, SOIC ROHS COMPLIANT: YES
*** Stop Electro
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SOP T/R
***ark
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Parte # Mfg. Descripción Valores Precio
NTMS4800NR2G
DISTI # NTMS4800NR2G-ND		ON SemiconductorMOSFET N-CH 30V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NTMS4800NR2GON Semiconductor 
    RoHS: Not Compliant    		71716
    • 1000:$0.1800
    • 100:$0.1900
    • 500:$0.1900
    • 25:$0.2000
    • 1:$0.2200
    NTMS4800NR2G
    DISTI # 863-NTMS4800NR2G    		ON SemiconductorMOSFET 30V 8A 0.020OHM N-CH
    RoHS: Compliant    		0
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      OMO.#: OMO-NTMS4872NR2G-FM4002-M-1190

      		 Nuevo y original
      NTMS4873NFR2G

      Mfr.#: NTMS4873NFR2G

      OMO.#: OMO-NTMS4873NFR2G-ON-SEMICONDUCTOR

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      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de NTMS4800NR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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