NTMS4816NR2G

NTMS4816NR2G
Mfr. #:
NTMS4816NR2G
Fabricante:
ON Semiconductor
Descripción:
MOSFET NFET SO8 30V 11A NCH 0.030R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTMS4816NR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4816NR2G DatasheetNTMS4816NR2G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
11 A
Rds On - Resistencia de la fuente de drenaje:
12.7 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.04 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.5 mm
Longitud:
5 mm
Producto:
Pequeña señal MOSFET
Serie:
NTMS4816N
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia
Ancho:
4 mm
Marca:
EN Semiconductor
Transconductancia directa - Mín .:
26 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.8 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21.6 ns
Tiempo típico de retardo de encendido:
8 ns
Unidad de peso:
0.019048 oz
Tags
NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
NTMS4816NR2G N-channel MOSFET Transistor; 11 A; 30 V; 8-Pin SOIC
***th Star Micro
Transistor MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
***emi
Single N-Channel Power MOSFET 30V, 11A, 10mΩ
***ark
Mosfet, N-Ch, 30V, 11A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0082Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ure Electronics
N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ
***et Europe
Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
***emi
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ponent Stockers USA
7800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 30V 19A N-Channel
*** Electronics
Trans MOSFET N-CH 30V 11A 8-Pin DSO T/R
***i-Key
MOSFET N-CH 30V 11A 8DSO
***ponent Stockers USA
SMALL SIGNAL FET
Parte # Mfg. Descripción Valores Precio
NTMS4816NR2G
DISTI # V72:2272_07297048
ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
RoHS: Compliant
410
  • 250:$0.2715
  • 100:$0.3016
  • 25:$0.4158
  • 10:$0.4620
  • 1:$0.5516
NTMS4816NR2G
DISTI # NTMS4816NR2GOSCT-ND
ON SemiconductorMOSFET N-CH 30V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
391In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
NTMS4816NR2G
DISTI # NTMS4816NR2GOSDKR-ND
ON SemiconductorMOSFET N-CH 30V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
391In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
NTMS4816NR2G
DISTI # NTMS4816NR2GOSTR-ND
ON SemiconductorMOSFET N-CH 30V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.2552
NTMS4816NR2G
DISTI # 27141479
ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 2500:$0.2689
NTMS4816NR2G
DISTI # 25773740
ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
RoHS: Compliant
410
  • 500:$0.2683
  • 250:$0.2980
  • 100:$0.3095
  • 32:$0.4157
NTMS4816NR2G
DISTI # NTMS4816NR2G
ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS4816NR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2089
  • 5000:$0.2069
  • 10000:$0.2049
  • 15000:$0.2019
  • 25000:$0.1969
NTMS4816NR2G
DISTI # NTMS4816NR2G
ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R (Alt: NTMS4816NR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$0.1996
  • 5000:$0.1920
  • 7500:$0.1848
  • 12500:$0.1782
  • 25000:$0.1721
  • 62500:$0.1664
  • 125000:$0.1636
NTMS4816NR2G
DISTI # 50AC6500
ON SemiconductorMOSFET, N-CH, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation , RoHS Compliant: Yes2490
  • 1:$0.7170
  • 10:$0.5860
  • 25:$0.5180
  • 50:$0.4610
  • 100:$0.3950
  • 250:$0.3470
  • 500:$0.2740
  • 1000:$0.2640
NTMS4816NR2G
DISTI # 75M5228
ON SemiconductorN CHANNEL MOSFET, 30V, 9A, SOIC,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):8.2mohm,Operating Temperature Max:150°C,Package / Case:8-SOIC , RoHS Compliant: Yes0
  • 1:$0.6400
  • 25:$0.4960
  • 100:$0.3200
  • 250:$0.3110
  • 500:$0.3010
  • 1000:$0.2560
  • 2500:$0.2160
  • 5000:$0.2100
NTMS4816NR2G
DISTI # 70341382
ON SemiconductorNTMS4816NR2G N-channel MOSFET Transistor,11 A,30 V,8-Pin SOIC
RoHS: Compliant
0
  • 20:$0.6100
  • 50:$0.5800
  • 100:$0.5500
  • 200:$0.5200
NTMS4816NR2GON Semiconductor 
RoHS: Not Compliant
207935
  • 1000:$0.2700
  • 500:$0.2800
  • 100:$0.2900
  • 25:$0.3000
  • 1:$0.3300
NTMS4816NR2G
DISTI # 863-NTMS4816NR2G
ON SemiconductorMOSFET NFET SO8 30V 11A NCH 0.030R
RoHS: Compliant
1594
  • 1:$0.6000
  • 10:$0.4960
  • 100:$0.3200
  • 1000:$0.2560
  • 2500:$0.2170
  • 10000:$0.2090
  • 25000:$0.2000
NTMS4816NR2G
DISTI # 7804727P
ON SemiconductorMOSFET N-CHANNEL 30V 11A SOIC8, RL2150
  • 20:£0.2150
  • 50:£0.1860
  • 100:£0.1650
  • 200:£0.1510
NTMS4816NR2GON SemiconductorINSTOCK8730
    NTMS4816NR2G
    DISTI # 2845385
    ON SemiconductorMOSFET, N-CH, 30V, 11A, SOIC
    RoHS: Compliant
    2490
    • 5:$0.9380
    • 25:$0.8040
    • 100:$0.5490
    • 250:$0.4500
    • 500:$0.3690
    • 1000:$0.3410
    • 5000:$0.3210
    NTMS4816NR2G
    DISTI # C1S541900265480
    ON SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
    RoHS: Compliant
    410
    • 250:$0.2980
    • 100:$0.3015
    • 25:$0.4157
    • 10:$0.4618
    NTMS4816NR2G
    DISTI # 2845385
    ON SemiconductorMOSFET, N-CH, 30V, 11A, SOIC
    RoHS: Compliant
    2490
    • 5:£0.5610
    • 25:£0.5130
    • 100:£0.3840
    • 250:£0.3350
    • 500:£0.2850
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    Mfr.#: 25LC160T-I/SN

    OMO.#: OMO-25LC160T-I-SN

    EEPROM 2kx8 - 2.5V
    LDL1117S50R

    Mfr.#: LDL1117S50R

    OMO.#: OMO-LDL1117S50R

    LDO Voltage Regulators POWER MANAGEMENT
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    Mfr.#: BME680

    OMO.#: OMO-BME680

    Air Quality Sensors Environmental Sensor VOC IIR EMC
    PMR03EZPJ000

    Mfr.#: PMR03EZPJ000

    OMO.#: OMO-PMR03EZPJ000-ROHM-SEMI

    RES SMD 0 OHM JUMPER 1/4W 0603
    ESP32-D0WDQ6

    Mfr.#: ESP32-D0WDQ6

    OMO.#: OMO-ESP32-D0WDQ6-ESPRESSIF-SYSTEMS

    RF Module (Alt: ESP32-D0WDQ6)
    PMV50ENEAR

    Mfr.#: PMV50ENEAR

    OMO.#: OMO-PMV50ENEAR-NEXPERIA

    MOSFET N-CH 30V TO-236AB
    LDL1117S50R

    Mfr.#: LDL1117S50R

    OMO.#: OMO-LDL1117S50R-STMICROELECTRONICS

    IC REG LINEAR 5V 1.2A SOT223
    GRM31CR60J227ME11L

    Mfr.#: GRM31CR60J227ME11L

    OMO.#: OMO-GRM31CR60J227ME11L-MURATA-ELECTRONICS

    Cap Ceramic 220uF 6.3V X5R 20% Pad SMD 1206 85C T/R
    BME680

    Mfr.#: BME680

    OMO.#: OMO-BME680-BOSCH-SENSORTEC

    SENSOR RH PRESSURE TEMP VOC
    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de NTMS4816NR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,60 US$
    0,60 US$
    10
    0,50 US$
    4,96 US$
    100
    0,32 US$
    32,00 US$
    1000
    0,26 US$
    256,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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