NE3508M04-A

NE3508M04-A
Mfr. #:
NE3508M04-A
Fabricante:
CEL
Descripción:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE3508M04-A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3508M04-A DatasheetNE3508M04-A Datasheet (P4-P6)NE3508M04-A Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
CEL
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
A granel
Estilo de montaje
SMD / SMT
Paquete-Estuche
FTSMM-4 (M04)
Tecnología
GaAs
Tipo transistor
HFET
Ganar
14 dB
Disipación de potencia Pd
175 mW
Temperatura máxima de funcionamiento
+ 150 C
Frecuencia de operación
2 GHz
Id-corriente-de-drenaje-continua
120 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
100 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Figura de ruido NF
0.45 dB
P1dB-Punto de compresión
18 dBm
Tags
NE3508, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans JFET N-CH 4V 120mA 4-Pin Super Mini-Mold(Flat Lead)
***i-Key
FET RF 4V 2GHZ 4-TSMM
Parte # Mfg. Descripción Valores Precio
NE3508M04-A
DISTI # NE3508M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-TSMM
RoHS: Compliant
Min Qty: 130
Container: Bulk
Limited Supply - Call
    NE3508M04-A
    DISTI # 551-NE3508M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      NE3509M04-A

      Mfr.#: NE3509M04-A

      OMO.#: OMO-NE3509M04-A

      RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE3509M04-EVNF24-A

      Mfr.#: NE3509M04-EVNF24-A

      OMO.#: OMO-NE3509M04-EVNF24-A

      RF Development Tools For NE3509M04-A
      NE3508M04-A

      Mfr.#: NE3508M04-A

      OMO.#: OMO-NE3508M04-A-CEL

      RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE350184C-T1A(PB)

      Mfr.#: NE350184C-T1A(PB)

      OMO.#: OMO-NE350184C-T1A-PB--1190

      Nuevo y original
      NE3503M04

      Mfr.#: NE3503M04

      OMO.#: OMO-NE3503M04-1190

      Nuevo y original
      NE3503M04-T2B-A/JT

      Mfr.#: NE3503M04-T2B-A/JT

      OMO.#: OMO-NE3503M04-T2B-A-JT-1190

      Nuevo y original
      NE3505M04-T2

      Mfr.#: NE3505M04-T2

      OMO.#: OMO-NE3505M04-T2-1190

      Nuevo y original
      NE3508M04

      Mfr.#: NE3508M04

      OMO.#: OMO-NE3508M04-1190

      Nuevo y original
      NE3508M04-T2-A/79

      Mfr.#: NE3508M04-T2-A/79

      OMO.#: OMO-NE3508M04-T2-A-79-1190

      Nuevo y original
      NE3509M04-T2-A/80

      Mfr.#: NE3509M04-T2-A/80

      OMO.#: OMO-NE3509M04-T2-A-80-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de NE3508M04-A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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