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SGP23N60UFDTU

SGP23N60UFDTU
Mfr. #:
SGP23N60UFDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors Dis High Perf IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SGP23N60UFDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SGP23N60UFDTU Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
23 A
Pd - Disipación de energía:
100 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SGP23N60UFD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
23 A
Altura:
9.4 mm
Longitud:
10.1 mm
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
23 A
Corriente de fuga puerta-emisor:
+/- 100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Parte # Alias:
SGP23N60UFDTU_NL
Unidad de peso:
0.063493 oz
Tags
SGP23N60UFD, SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail
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***ure Electronics
SGP23N60: 600 V 23 A 100 W Through Hole Ultra-Fast IGBT - TO-220-3
***rchild Semiconductor
Fairchild's UD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***el Electronic
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***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ure Electronics
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ure Electronics
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***nell
IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3
***ark
Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descripción Valores Precio
SGP23N60UFDTU
DISTI # C1S541901576781		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		5200
  • 2000:$0.9020
  • 500:$1.2700
  • 5:$2.0700
SGP23N60UFDTU
DISTI # SGP23N60UFDTU-ND		ON SemiconductorIGBT 600V 23A 100W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.0099
SGP23N60UFDTU
DISTI # SGP23N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7909
  • 2000:$0.7859
  • 4000:$0.7759
  • 6000:$0.7659
  • 10000:$0.7469
SGP23N60UFDTU
DISTI # 512-SGP23N60UFDTU		ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant		0
    SGP23N60UFDTU
    DISTI # XSFP00000158817    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1346
    • 1000:$1.9400
    • 1346:$1.7600
    Imagen Parte # Descripción
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60

    Mfr.#: SGP23N60

    OMO.#: OMO-SGP23N60-1190

    		 Nuevo y original
    SGP23N60RUFD

    Mfr.#: SGP23N60RUFD

    OMO.#: OMO-SGP23N60RUFD-1190

    		 Nuevo y original
    SGP23N60UF

    Mfr.#: SGP23N60UF

    OMO.#: OMO-SGP23N60UF-1190

    		 Nuevo y original
    SGP23N60UFD

    Mfr.#: SGP23N60UFD

    OMO.#: OMO-SGP23N60UFD-1190

    		 Nuevo y original
    SGP23N60UFD G23N60UFD

    Mfr.#: SGP23N60UFD G23N60UFD

    OMO.#: OMO-SGP23N60UFD-G23N60UFD-1190

    		 Nuevo y original
    SGP23N60UFDTU_NL

    Mfr.#: SGP23N60UFDTU_NL

    OMO.#: OMO-SGP23N60UFDTU-NL-1190

    		 Nuevo y original
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 23A 100W TO220-3
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de SGP23N60UFDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,13 US$
    2,13 US$
    10
    1,81 US$
    18,10 US$
    100
    1,45 US$
    145,00 US$
    500
    1,27 US$
    635,00 US$
    1000
    1,05 US$
    1 050,00 US$
    2000
    0,98 US$
    1 960,00 US$
    5000
    0,94 US$
    4 715,00 US$
    10000
    0,91 US$
    9 070,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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