SGP23N60UFTU

SGP23N60UFTU
Mfr. #:
SGP23N60UFTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors Dis High Perf IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SGP23N60UFTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
23 A
Pd - Disipación de energía:
100 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SGP23N60UF
Embalaje:
Tubo
Corriente continua de colector Ic Max:
23 A
Altura:
9.4 mm
Longitud:
10.1 mm
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
23 A
Corriente de fuga puerta-emisor:
+/- 100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Parte # Alias:
SGP23N60UFTU_NL
Unidad de peso:
0.063493 oz
Tags
SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
SGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3
***r Electronics
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***el Electronic
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ure Electronics
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ure Electronics
STGP Series IGBT Low On State Through Hole IGBT - TO-220-3
***nell
IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descripción Valores Precio
SGP23N60UFTU
DISTI # 26699654
ON SemiconductorPTTIGBT TO220 12A 600V11000
  • 1000:$1.5048
SGP23N60UFTU
DISTI # SGP23N60UFTU-ND
ON SemiconductorIGBT 600V 23A 100W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
926In Stock
  • 5000:$1.2125
  • 3000:$1.2277
  • 1000:$1.3186
  • 100:$1.9370
  • 25:$2.2736
  • 10:$2.4100
  • 1:$2.6800
SGP23N60UFTU
DISTI # V36:1790_06359286
ON SemiconductorPTTIGBT TO220 12A 600V0
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€0.9919
    • 500:€1.0069
    • 100:€1.0229
    • 50:€1.0389
    • 25:€1.1439
    • 10:€1.3389
    • 1:€1.6369
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    • 4000:$1.3900
    • 6000:$1.3900
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 199
    Container: Bulk
    Americas - 0
    • 995:$1.4900
    • 1990:$1.4900
    • 199:$1.5900
    • 398:$1.5900
    • 597:$1.5900
    SGP23N60UFTU
    DISTI # 83C0928
    ON SemiconductorTRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,23A I(C),TO-220AB ROHS COMPLIANT: YES0
    • 10000:$1.1900
    • 2500:$1.2500
    • 1000:$1.3500
    • 500:$1.6100
    • 100:$1.8300
    • 10:$2.2500
    • 1:$2.7700
    SGP23N60UFTUON SemiconductorSGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3
    RoHS: Compliant
    300Tube
    • 50:$1.7800
    • 100:$1.4000
    • 250:$1.3400
    • 500:$1.2900
    SGP23N60UFTU
    DISTI # 512-SGP23N60UFTU
    ON SemiconductorIGBT Transistors Dis High Perf IGBT
    RoHS: Compliant
    1204
    • 1:$2.5400
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5100
    • 1000:$1.2500
    SGP23N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    2741
    • 1000:$1.6600
    • 500:$1.7500
    • 100:$1.8200
    • 25:$1.9000
    • 1:$2.0400
    SGP23N60UFTU
    DISTI # 8022238
    ON SemiconductorIGBTFAIRCHILDSGP23N60UFTU, PK55
    • 50:£0.8240
    • 5:£0.8440
    SGP23N60UFTU
    DISTI # 8022238P
    ON SemiconductorIGBTFAIRCHILDSGP23N60UFTU, TU510
    • 50:£0.8240
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTransistor: IGBT,600V,12A,100W,TO220-3854
    • 1:$2.0200
    • 5:$1.8200
    • 25:$1.6000
    • 100:$1.4400
    SGP23N60UFTU
    DISTI # XSFP00000015535
    Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.7AI(D),30V, 2-Element, N-Channel and P-Channel,Silicon,Metal-oxide Semiconductor FET, MS-012AA
    RoHS: Compliant
    162 in Stock0 on Order
    • 162:$2.5500
    • 72:$2.8000
    SGP23N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    Europe - 7
      Imagen Parte # Descripción
      PWD13F60

      Mfr.#: PWD13F60

      OMO.#: OMO-PWD13F60

      Gate Drivers High-density power driver - high voltage full bridge with integrated gate driver
      FSBB15CH60D

      Mfr.#: FSBB15CH60D

      OMO.#: OMO-FSBB15CH60D

      Motor / Motion / Ignition Controllers & Drivers 600V/15A SPM3 V5
      LDL1117S33R

      Mfr.#: LDL1117S33R

      OMO.#: OMO-LDL1117S33R

      LDO Voltage Regulators POWER MANAGEMENT
      SEN-14686

      Mfr.#: SEN-14686

      OMO.#: OMO-SEN-14686

      Multiple Function Sensor Development Tools SparkFun VR IMU Breakout - BNO080 (Qwiic)
      LDL1117S33R

      Mfr.#: LDL1117S33R

      OMO.#: OMO-LDL1117S33R-STMICROELECTRONICS

      IC REG LINEAR 3.3V 1.2A SOT223
      RS6-1212S

      Mfr.#: RS6-1212S

      OMO.#: OMO-RS6-1212S-RECOM-POWER

      Module DC-DC 12VIN 1-OUT 12V 0.5A 6W 7-Pin SIP Module Tube
      FSBB15CH60D

      Mfr.#: FSBB15CH60D

      OMO.#: OMO-FSBB15CH60D-ON-SEMICONDUCTOR

      Motor / Motion / Ignition Controllers & Drivers 600V/15A SPM3 V5
      ROE-1205S

      Mfr.#: ROE-1205S

      OMO.#: OMO-ROE-1205S-RECOM-POWER

      DC to DC Converter Modules
      CRV1D1212SC

      Mfr.#: CRV1D1212SC

      OMO.#: OMO-CRV1D1212SC-MURATA-POWER-SOLUTIONS

      DC/DC TH 1W 5-5V SIP DUAL
      PWD13F60

      Mfr.#: PWD13F60

      OMO.#: OMO-PWD13F60-STMICROELECTRONICS

      POWER DRIVER
      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de SGP23N60UFTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,54 US$
      2,54 US$
      10
      2,16 US$
      21,60 US$
      100
      1,73 US$
      173,00 US$
      500
      1,51 US$
      755,00 US$
      1000
      1,25 US$
      1 250,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      • FPF1203LUCX IntelliMAX™ Load Switches
        ON Semiconductor FPF1203 / 03L / 04 / 45 are ultra-small integrated IntelliMAX load switches.
      • FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      • MEMS Motion Tracking Modules
        ON Semiconductor's FMT1000 series are industrial grade module family includes accelerometers, gyroscopes, magnetometers, 10 ppm crystal, and a dedicated MCU.
      • Compare SGP23N60UFTU
        SGP23N60UF vs SGP23N60UFD vs SGP23N60UFDG23N60UFD
      • FL7733AMX LED Driver
        ON Semiconductor's FL7733A single-stage primary-side-regulated (PSR) flyback LED driver delivers constant brightness and instant flicker-free turn-on of LED lighting.
      • FL7734 PWM Controller
        ON Semiconductor's FL7734 highly-integrated PWM controller with advanced primary-side-regulation technique minimizes components for low power LED lighting solutions.
      Top