OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IDW20G120C5BFKSA1

IDW20G120C5BFKSA1
Mfr. #:
IDW20G120C5BFKSA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDW20G120C5BFKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IDW20G120C5BFKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Si - Corriente directa:
20 A
Vrrm - Voltaje inverso repetitivo:
1.2 kV
Vf - Voltaje directo:
1.4 V
Ifsm - Corriente de sobretensión directa:
190 A
Configuración:
Ánodo doble, cátodo común
Tecnología:
Sic
Ir - Corriente inversa:
12 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Infineon Technologies
Pd - Disipación de energía:
250 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
240
Subcategoría:
Diodes & Rectifiers
Nombre comercial:
CoolSiC
Vr - Voltaje inverso:
1.2 kV
Parte # Alias:
IDW20G120C5B SP001020716
Unidad de peso:
1.340411 oz
Tags
IDW20G1, IDW20G, IDW20, IDW2, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW20G120C5B Series 1200 V 62A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ical
Diode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Diode Schottky 1.2KV 62A 3-Pin TO-247 Tube
***an P&S
1200V,20A,Silicon Carbide Schottky Diode
***i-Key
DIODE 1.2KV 20A RAPID2 TO247-3
***ukat
SiC-Schottky 1200V 20A(2x10) TO247
***ronik
SiC-D 1200 20A 1,4V TO247-3
***ark
Sic Schottky Diode, 1.2Kv, 62A, To-247; Product Range:thinq Series; Diode Configuration:dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:62A; Total Capacitive Charge Qc:106Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247; Product Range:thinQ Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:62A; Total Capacitive Charge Qc:106nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):62A; Forward Surge Current Ifsm Max:95A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC, 1,2KV, 62A, TO-247; Gamma Prodotti:thinQ Series; Configurazione Diodo:Catodo Comune, Doppio; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:62A; Potenza Reattiva Capacitiva Qc:106nC; Modello Involucro Diodo:TO-247; Numero di Pin:3 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):62A; Corrente di Picco Diretta Ifsm Max:95A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.65V
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
IDW20G120C5BFKSA1
DISTI # V99:2348_06377645		Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		104
  • 1000:$9.1560
  • 500:$9.8320
  • 250:$10.5650
  • 100:$11.1820
  • 25:$12.6910
  • 10:$13.3190
  • 1:$14.5100
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1-ND		Infineon Technologies AGDIODE 1.2KV 20A RAPID2 TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		103In Stock
  • 240:$12.3639
  • 10:$14.6390
  • 1:$15.9300
IDW20G120C5BFKSA1
DISTI # 30294852		Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		420
  • 2:$9.2673
IDW20G120C5BFKSA1
DISTI # 27580820		Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		104
  • 100:$11.1820
  • 25:$12.6910
  • 10:$13.3190
  • 1:$14.5100
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1		Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW20G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$10.3900
  • 480:$9.9900
  • 960:$9.5900
  • 1440:$9.2900
  • 2400:$9.0900
IDW20G120C5BFKSA1
DISTI # SP001020716		Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin TO-247 Tube (Alt: SP001020716)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€11.0900
  • 10:€10.1900
  • 25:€9.7900
  • 50:€9.3900
  • 100:€8.9900
  • 500:€8.6900
  • 1000:€8.0900
IDW20G120C5BFKSA1
DISTI # 12AC9659		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247,Product Range:thinQ Series,Diode Configuration:Dual Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:62A,Total Capacitive Charge Qc:106nC,Diode Case , RoHS Compliant: Yes33
  • 1:$15.1700
  • 10:$13.9500
  • 25:$13.3700
  • 50:$12.5800
  • 100:$11.7800
  • 250:$11.2000
  • 500:$10.4800
IDW20G120C5BFKSA1
DISTI # 726-IDW20G120C5BFKSA		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		147
  • 1:$15.1700
  • 10:$13.9500
  • 25:$13.3700
  • 100:$11.7800
  • 250:$11.2000
  • 500:$10.4800
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x10A,250W,Ir:12uA6
  • 1:$23.8000
  • 3:$20.5100
  • 10:$16.4900
IDW20G120C5BFKSA1
DISTI # IDW20G120C5B		Infineon Technologies AGSiC-Schottky 1200V 20A(2x10) TO247
RoHS: Compliant		35
  • 1:€12.7500
  • 25:€9.7500
  • 100:€8.8500
  • 200:€8.5000
IDW20G120C5BFKSA1
DISTI # C1S322000566578		Infineon Technologies AGRectifier Diodes420
  • 100:$12.1000
  • 50:$14.6000
  • 25:$15.8000
  • 10:$17.2000
  • 5:$17.6000
  • 1:$23.4000
IDW20G120C5BFKSA1
DISTI # 2709929		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247
RoHS: Compliant		64
  • 1:£11.9900
  • 5:£11.5800
  • 10:£10.2100
  • 50:£9.6100
  • 100:£9.0000
IDW20G120C5BFKSA1
DISTI # 2709929		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247
RoHS: Compliant		33
  • 1:$22.3000
  • 10:$20.8500
  • 100:$18.4400
Imagen Parte # Descripción
INA317IDGKR

Mfr.#: INA317IDGKR

OMO.#: OMO-INA317IDGKR

 Instrumentation Amplifiers LOW POWER INSTRUMENTATION AMP
OPA2189IDR

Mfr.#: OPA2189IDR

OMO.#: OMO-OPA2189IDR

 Operational Amplifiers - Op Amps 36V ZERO DRIFT OPAMP
1EDC60H12AHXUMA1

Mfr.#: 1EDC60H12AHXUMA1

OMO.#: OMO-1EDC60H12AHXUMA1

 Gate Drivers DRIVER IC
IDDD20G65C6XTMA1

Mfr.#: IDDD20G65C6XTMA1

OMO.#: OMO-IDDD20G65C6XTMA1

 Schottky Diodes & Rectifiers SIC DIODES
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1

 Schottky Diodes & Rectifiers SIC DIODES
IDM10G120C5XTMA1

Mfr.#: IDM10G120C5XTMA1

OMO.#: OMO-IDM10G120C5XTMA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
DG613EEQ-T1-GE4

Mfr.#: DG613EEQ-T1-GE4

OMO.#: OMO-DG613EEQ-T1-GE4

 Analog Switch ICs Quad SPST 1.4pC 16-pin TSSOP
C4AQLBW5900A3OK

Mfr.#: C4AQLBW5900A3OK

OMO.#: OMO-C4AQLBW5900A3OK

 Film Capacitors 500V 90uF LS=37.5mm 10% AEC-Q200
DG613EEQ-T1-GE4

Mfr.#: DG613EEQ-T1-GE4

OMO.#: OMO-DG613EEQ-T1-GE4-VISHAY

 IC ANALOG SWITCH 16TSSOP
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1-INFINEON-TECHNOLOGIES

 SIC DIODES
Disponibilidad
Valores:
82
En orden:
2065
Ingrese la cantidad:
El precio actual de IDW20G120C5BFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,88 US$
10,88 US$
10
10,00 US$
100,00 US$
25
9,59 US$
239,75 US$
100
8,45 US$
845,00 US$
250
8,03 US$
2 007,50 US$
500
7,51 US$
3 755,00 US$
1000
6,89 US$
6 890,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top