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IDM10G120C5XTMA1

IDM10G120C5XTMA1
Mfr. #:
IDM10G120C5XTMA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDM10G120C5XTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IDM10G120C5XTMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-2
Si - Corriente directa:
10 A
Vrrm - Voltaje inverso repetitivo:
1.2 kV
Vf - Voltaje directo:
1.5 V
Ifsm - Corriente de sobretensión directa:
99 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
4 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Carrete
Marca:
Infineon Technologies
Pd - Disipación de energía:
223 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
2500
Subcategoría:
Diodes & Rectifiers
Nombre comercial:
CoolSiC
Vr - Voltaje inverso:
1.2 kV
Parte # Alias:
IDM10G120C5 SP001127116
Unidad de peso:
0.011993 oz
Tags
IDM10, IDM1, IDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-252
***ineon SCT
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package, PG-TO252-2, RoHS
***ure Electronics
IDM10G120C5 Series 1200 V 38 A 5th Generation ThinQ!™SiC Schottky Diode-TO-252-3
***ical
Rectifier Diode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
***nell
SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252; Product Range: thinQ 5G 1200V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 38A; Total Capacitive Charge Qc: 41nC; Diode Case Style: TO-252; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 38A; Forward Surge Current Ifsm Max: 99A; Forward Voltage VF Max: 1.8V; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
IDM10G120C5XTMA1
DISTI # V72:2272_13989816		Infineon Technologies AGDiode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		525
  • 500:$4.9380
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 1:$7.3710
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1CT-ND		Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2026In Stock
  • 500:$5.9293
  • 100:$6.8092
  • 10:$8.2250
  • 1:$9.1000
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1DKR-ND		Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2026In Stock
  • 500:$5.9293
  • 100:$6.8092
  • 10:$8.2250
  • 1:$9.1000
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1TR-ND		Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$4.9519
IDM10G120C5XTMA1
DISTI # 26196598		Infineon Technologies AGDiode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		525
  • 500:$4.9380
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 2:$7.3710
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1		Infineon Technologies AGSIC CHIP/DISCRETE - Tape and Reel (Alt: IDM10G120C5XTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$4.9900
  • 5000:$4.8900
  • 10000:$4.6900
  • 15000:$4.4900
  • 25000:$4.3900
IDM10G120C5XTMA1
DISTI # 34AC1583		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:38A,Total Capacitive Charge Qc:41nC,Diode Case , RoHS Compliant: Yes2042
  • 1:$8.4200
  • 10:$7.6100
  • 25:$7.2600
  • 50:$6.7800
  • 100:$6.3000
  • 250:$6.0200
  • 500:$5.4900
  • 1000:$4.7800
IDM10G120C5XTMA1
DISTI # 726-IDM10G120C5XTMA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		4953
  • 1:$8.4200
  • 10:$7.6100
  • 25:$7.2600
  • 100:$6.3000
  • 250:$6.0200
  • 500:$5.4900
  • 1000:$4.7800
  • 2500:$4.6000
IDM10G120C5XTMA1
DISTI # 2780807		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252
RoHS: Compliant		1877
  • 1:£6.6200
  • 5:£6.1700
  • 10:£5.7100
  • 50:£5.3300
  • 100:£4.9500
IDM10G120C5XTMA1
DISTI # C1S322000680072		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		525
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 1:$7.3710
IDM10G120C5XTMA1
DISTI # 2780807		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252
RoHS: Compliant		1867
  • 1:$10.9200
  • 5:$10.2100
  • 10:$9.0300
  • 50:$8.5400
  • 100:$8.1000
  • 250:$7.7000
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de IDM10G120C5XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,21 US$
6,21 US$
10
5,28 US$
52,80 US$
100
4,58 US$
458,00 US$
250
4,34 US$
1 085,00 US$
500
3,90 US$
1 950,00 US$
1000
3,28 US$
3 280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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