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SI4931DY-T1-GE3

SI4931DY-T1-GE3
Mfr. #:
SI4931DY-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4931DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI4931DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
Chips de IC
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4931DY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
1.1W
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
12V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
6.7A
Rds-On-Max-Id-Vgs
18 mOhm @ 8.9A, 4.5V
Vgs-th-Max-Id
1V @ 350μA
Puerta-Carga-Qg-Vgs
52nC @ 4.5V
Disipación de potencia Pd
1.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
155 ns
Hora de levantarse
46 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
6.7 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Resistencia a la fuente de desagüe de Rds
18 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
230 ns
Tiempo de retardo de encendido típico
25 ns
Modo de canal
Mejora
Tags
SI4931DY-T, SI4931, SI493, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
***ark
Dual P-Channel 12-V (D-S) Mosfet
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SI4931DY-T1-GE3
DISTI # V72:2272_09216664		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 10:$0.9815
  • 1:$1.1463
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		22500In Stock
  • 2500:$0.4500
SI4931DY-T1-GE3
DISTI # 31041114		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 13:$0.9815
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$2.5240
  • 5000:$1.9415
  • 7500:$1.5453
  • 12500:$1.3055
  • 25000:$1.2019
  • 62500:$1.1649
  • 125000:$1.1301
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5999
  • 5000:$0.5819
  • 10000:$0.5579
  • 15000:$0.5429
  • 25000:$0.5279
SI4931DY-T1-GE3
DISTI # 15R5125		Vishay IntertechnologiesDUAL P-CHANNEL 12-V (D-S) MOSFET0
  • 1:$0.8410
  • 1000:$0.8070
  • 2000:$0.7340
  • 4000:$0.6600
  • 6000:$0.6360
  • 10000:$0.6210
SI4931DY-T1-GE3
DISTI # 781-SI4931DY-GE3		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
RoHS: Compliant		7375
  • 1:$1.4500
  • 10:$1.1900
  • 100:$0.9110
  • 500:$0.7840
  • 1000:$0.6190
  • 2500:$0.5780
SI4931DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 560
    SI4931DY-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
    RoHS: Compliant    		Americas -
      SI4931DY-T1-GE3
      DISTI # C1S803601969446      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
      RoHS: Compliant      		600
      • 250:$0.7742
      • 100:$0.7825
      • 25:$0.9702
      • 10:$0.9815
      Imagen Parte # Descripción
      SI4931DY-T1-E3

      Mfr.#: SI4931DY-T1-E3

      OMO.#: OMO-SI4931DY-T1-E3

      		 MOSFET -12V Vds 8V Vgs SO-8
      SI4931DY-T1-GE3

      Mfr.#: SI4931DY-T1-GE3

      OMO.#: OMO-SI4931DY-T1-GE3

      		 MOSFET -12V Vds 8V Vgs SO-8
      SI4931DY-T1-GE3

      Mfr.#: SI4931DY-T1-GE3

      OMO.#: OMO-SI4931DY-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
      SI4931DY-T1-E3-CUT TAPE

      Mfr.#: SI4931DY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4931DY-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI4931DY

      Mfr.#: SI4931DY

      OMO.#: OMO-SI4931DY-1190

      		 Nuevo y original
      SI4931DY-E3

      Mfr.#: SI4931DY-E3

      OMO.#: OMO-SI4931DY-E3-1190

      		 Nuevo y original
      SI4931DY-T1-E3

      Mfr.#: SI4931DY-T1-E3

      OMO.#: OMO-SI4931DY-T1-E3-VISHAY

      		 MOSFET 2P-CH 12V 6.7A 8-SOIC
      SI4931DY-T1GE3

      Mfr.#: SI4931DY-T1GE3

      OMO.#: OMO-SI4931DY-T1GE3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de SI4931DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,68 US$
      0,68 US$
      10
      0,64 US$
      6,41 US$
      100
      0,61 US$
      60,75 US$
      500
      0,57 US$
      286,85 US$
      1000
      0,54 US$
      540,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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