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HGTP12N60A4D

HGTP12N60A4D
Mfr. #:
HGTP12N60A4D
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 54A 167W TO220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP12N60A4D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP12N60A4D, HGTP12N60A, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60A4D Series 600 V 54 A N-Channel IGBT with Anti Parallel Hyperfast Diode
***r Electronics
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 54A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating
***rchild Semiconductor
The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ineon SCT
IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ernational Rectifier
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.8 V Current release time: 13.2 ns Power dissipation: 90 W
***ment14 APAC
IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Fall Time Max:18ns; Fall Time tf:18ns; Package / Case:TO-220AB; Power Dissipation Max:90W; Power Dissipation Pd:90W; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Pulsed Current Icm:26A; Rise Time:17ns; SMD Marking:IRGB6B60K; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***el Electronic
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
***ure Electronics
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
***itex
Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ical
Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***rchild Semiconductor
The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ark
FIELD STOP IGBT, 600V, 10A, 3-TO-220; Transistor Type:IGBT; DC Collector Current
***Yang
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.
***nell
IGBT,N CH,600V,10A,T220AB; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:83W
Parte # Mfg. Descripción Valores Precio
HGTP12N60A4D
DISTI # V79:2366_23246385		ON SemiconductorPT P TO220 12A 600V SMPS740
  • 1600:$1.4266
  • 800:$1.6703
  • 100:$2.0614
  • 10:$2.5014
  • 1:$3.1309
HGTP12N60A4D
DISTI # V36:1790_06359709		ON SemiconductorPT P TO220 12A 600V SMPS0
  • 800000:$0.9099
  • 400000:$0.9140
  • 80000:$1.4310
  • 8000:$2.4530
  • 800:$2.6300
HGTP12N60A4D
DISTI # HGTP12N60A4D-ND		ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		517In Stock
  • 5600:$1.1900
  • 3200:$1.2049
  • 800:$1.5619
  • 100:$1.9010
  • 25:$2.2312
  • 10:$2.3650
  • 1:$2.6300
HGTP12N60A4D
DISTI # 32380143		ON SemiconductorPT P TO220 12A 600V SMPS740
  • 6:$3.1309
HGTP12N60A4D
DISTI # 32825695		ON SemiconductorPT P TO220 12A 600V SMPS200
  • 11:$0.9861
HGTP12N60A4D
DISTI # HGTP12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP12N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1000:€1.0229
  • 500:€1.0609
  • 100:€1.1019
  • 50:€1.1459
  • 25:€1.1939
  • 10:€1.3019
  • 1:€1.4329
HGTP12N60A4D
DISTI # HGTP12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP12N60A4D)
RoHS: Compliant
Min Qty: 188
Container: Bulk		Americas - 0
  • 940:$1.5900
  • 1880:$1.5900
  • 188:$1.6900
  • 376:$1.6900
  • 564:$1.6900
HGTP12N60A4D
DISTI # HGTP12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60A4D)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.9259
  • 4800:$0.9499
  • 3200:$0.9619
  • 1600:$0.9739
  • 800:$0.9809
HGTP12N60A4D
DISTI # 05M3595		ON SemiconductorIGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes1888
  • 5000:$1.2300
  • 2500:$1.2700
  • 1000:$1.5600
  • 500:$1.7400
  • 100:$1.8800
  • 10:$2.3500
  • 1:$2.7600
HGTP12N60A4D
DISTI # 512-HGTP12N60A4D		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
RoHS: Compliant		0
    HGTP12N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		92185
    • 1000:$1.0900
    • 500:$1.1500
    • 100:$1.2000
    • 25:$1.2500
    • 1:$1.3400
    HGTP12N60A4DFairchild Semiconductor Corporation 54
      HGTP12N60A4D
      DISTI # HGTP12N60A4D      		ON SemiconductorTransistor: IGBT,600V,23A,167W,TO220-3708
      • 500:$1.2300
      • 100:$1.3200
      • 25:$1.4600
      • 5:$1.8200
      • 1:$2.1300
      HGTP12N60A4DFairchild Semiconductor Corporation 
      RoHS: Not Compliant      		800
        HGTP12N60A4D
        DISTI # 1057676        		ON SemiconductorIGBT, TO-2202644
        • 500:£1.4000
        • 250:£1.5500
        • 100:£1.7000
        • 10:£2.1200
        • 1:£2.6600
        HGTP12N60A4D
        DISTI # 1057676        		ON SemiconductorIGBT, TO-220
        RoHS: Compliant        		1878
        • 1600:$2.2100
        • 800:$2.6700
        • 100:$3.2500
        • 10:$4.0300
        • 1:$4.4900
        Imagen Parte # Descripción
        HGTP12N60A4

        Mfr.#: HGTP12N60A4

        OMO.#: OMO-HGTP12N60A4

        		 IGBT Transistors 600V N-Channel IGBT SMPS Series
        HGTP12N60C3D

        Mfr.#: HGTP12N60C3D

        OMO.#: OMO-HGTP12N60C3D-ON-SEMICONDUCTOR

        		 IGBT Transistors HGTP12N60C3D
        HGTP12N60A4

        Mfr.#: HGTP12N60A4

        OMO.#: OMO-HGTP12N60A4-ON-SEMICONDUCTOR

        		 IGBT 600V 54A 167W TO220AB
        HGTP12N60A4D?

        Mfr.#: HGTP12N60A4D?

        OMO.#: OMO-HGTP12N60A4D--1190

        		 PT P TO220 12A 600V SMPS
        HGTP12N60B3D

        Mfr.#: HGTP12N60B3D

        OMO.#: OMO-HGTP12N60B3D-1190

        		 Nuevo y original
        HGTP12N60C3

        Mfr.#: HGTP12N60C3

        OMO.#: OMO-HGTP12N60C3-ON-SEMICONDUCTOR

        		 IGBT 600V 24A 104W TO220AB
        HGTP12N60C3D G12N60C3D

        Mfr.#: HGTP12N60C3D G12N60C3D

        OMO.#: OMO-HGTP12N60C3D-G12N60C3D-1190

        		 Nuevo y original
        HGTP12N60C3DLS

        Mfr.#: HGTP12N60C3DLS

        OMO.#: OMO-HGTP12N60C3DLS-1190

        		 Nuevo y original
        HGTP12N60C3DR

        Mfr.#: HGTP12N60C3DR

        OMO.#: OMO-HGTP12N60C3DR-1190

        		 Nuevo y original
        HGTP12N60A4D 12N60A4D

        Mfr.#: HGTP12N60A4D 12N60A4D

        OMO.#: OMO-HGTP12N60A4D-12N60A4D-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de HGTP12N60A4D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,36 US$
        1,36 US$
        10
        1,30 US$
        12,97 US$
        100
        1,23 US$
        122,84 US$
        500
        1,16 US$
        580,05 US$
        1000
        1,09 US$
        1 091,90 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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