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HGTP12N60A4

HGTP12N60A4
Mfr. #:
HGTP12N60A4
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP12N60A4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP12N60A4 DatasheetHGTP12N60A4 Datasheet (P4-P6)HGTP12N60A4 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
54 A
Pd - Disipación de energía:
167 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
54 A
Altura:
9.65 mm
Longitud:
10.67 mm
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
54 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
400
Subcategoría:
IGBT
Parte # Alias:
HGTP12N60A4_NL
Unidad de peso:
0.211644 oz
Tags
HGTP12N60A, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***i-Key
IGBT 600V 54A 167W TO220AB
***inecomponents.com
600V SMPS Series N-Channel IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1
Parte # Mfg. Descripción Valores Precio
HGTP12N60A4D
DISTI # V79:2366_23246385		ON SemiconductorPT P TO220 12A 600V SMPS740
  • 1600:$1.4266
  • 800:$1.6703
  • 100:$2.0614
  • 10:$2.5014
  • 1:$3.1309
HGTP12N60A4D
DISTI # V36:1790_06359709		ON SemiconductorPT P TO220 12A 600V SMPS0
  • 800000:$0.9099
  • 400000:$0.9140
  • 80000:$1.4310
  • 8000:$2.4530
  • 800:$2.6300
HGTP12N60A4D
DISTI # HGTP12N60A4D-ND		ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		517In Stock
  • 5600:$1.1900
  • 3200:$1.2049
  • 800:$1.5619
  • 100:$1.9010
  • 25:$2.2312
  • 10:$2.3650
  • 1:$2.6300
HGTP12N60A4
DISTI # HGTP12N60A4-ND		ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 400
Container: Tube		Limited Supply - Call
    HGTP12N60A4D
    DISTI # 32380143    		ON SemiconductorPT P TO220 12A 600V SMPS740
    • 6:$3.1309
    HGTP12N60A4D
    DISTI # 32825695    		ON SemiconductorPT P TO220 12A 600V SMPS200
    • 11:$0.9861
    HGTP12N60A4D
    DISTI # HGTP12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 1    		Europe - 200
    • 1000:€1.0229
    • 500:€1.0609
    • 100:€1.1019
    • 50:€1.1459
    • 25:€1.1939
    • 10:€1.3019
    • 1:€1.4329
    HGTP12N60A4D
    DISTI # HGTP12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 188
    Container: Bulk    		Americas - 0
    • 940:$1.5900
    • 1880:$1.5900
    • 188:$1.6900
    • 376:$1.6900
    • 564:$1.6900
    HGTP12N60A4D
    DISTI # HGTP12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Americas - 0
    • 8000:$0.9259
    • 4800:$0.9499
    • 3200:$0.9619
    • 1600:$0.9739
    • 800:$0.9809
    HGTP12N60A4D
    DISTI # 05M3595    		ON SemiconductorIGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes1888
    • 5000:$1.2300
    • 2500:$1.2700
    • 1000:$1.5600
    • 500:$1.7400
    • 100:$1.8800
    • 10:$2.3500
    • 1:$2.7600
    HGTP12N60A4
    DISTI # 512-HGTP12N60A4    		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
    RoHS: Compliant    		0
      HGTP12N60A4D
      DISTI # 512-HGTP12N60A4D      		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant      		0
        HGTP12N60A4Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
        RoHS: Compliant        		679
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        HGTP12N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant        		92185
        • 1000:$1.0900
        • 500:$1.1500
        • 100:$1.2000
        • 25:$1.2500
        • 1:$1.3400
        HGTP12N60A4Harris SemiconductorInsulated Gate Bipolar Transistor
        RoHS: Compliant        		900
        • 1000:$1.3600
        • 500:$1.4300
        • 100:$1.4900
        • 25:$1.5500
        • 1:$1.6700
        HGTP12N60A4DFairchild Semiconductor Corporation 54
          HGTP12N60A4D
          DISTI # HGTP12N60A4D          		ON SemiconductorTransistor: IGBT,600V,23A,167W,TO220-3708
          • 500:$1.2300
          • 100:$1.3200
          • 25:$1.4600
          • 5:$1.8200
          • 1:$2.1300
          HGTP12N60A4DFairchild Semiconductor Corporation 
          RoHS: Not Compliant          		800
            HGTP12N60A4D
            DISTI # 1057676            		ON SemiconductorIGBT, TO-220
            RoHS: Compliant            		1878
            • 1600:$2.2100
            • 800:$2.6700
            • 100:$3.2500
            • 10:$4.0300
            • 1:$4.4900
            HGTP12N60A4D
            DISTI # 1057676            		ON SemiconductorIGBT, TO-2202644
            • 500:£1.4000
            • 250:£1.5500
            • 100:£1.7000
            • 10:£2.1200
            • 1:£2.6600
            Imagen Parte # Descripción
            MGJ2D051509SC

            Mfr.#: MGJ2D051509SC

            OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

            		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
            Disponibilidad
            Valores:
            Available
            En orden:
            4500
            Ingrese la cantidad:
            El precio actual de HGTP12N60A4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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