IPP030N10N3GXKSA1

Mfr. #:: IPP030N10N3GXKSA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 100V 100A TO220-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPP030N10N3GXKSA1 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-220-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 100 V

Id - Corriente de drenaje continua:: 100 A

Rds On - Resistencia de la fuente de drenaje:: 3 mOhms

Configuración:: Único

Nombre comercial:: OptiMOS

Embalaje:: Tubo

Altura:: 15.65 mm

Longitud:: 10 mm

Serie:: OptiMOS 3

Tipo de transistor:: 1 N-Channel

Ancho:: 4.4 mm

Marca:: Infineon Technologies

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 500

Subcategoría:: MOSFET

Parte # Alias:: G IPP030N10N3 IPP3N1N3GXK SP000680768

Unidad de peso:: 0.211644 oz

Tags: IPP030N10N3G, IPP030N10N3, IPP030N10N, IPP030, IPP03, IPP0, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP030N10N3GXKSA1 Descripción

***p One Stop: Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: Single N-Channel 100 V 3 mOhm 155 nC OptiMOS Power Mosfet - TO-220-3

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 84 / Turn-ON Delay Time ns = 34 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ineon SCT: Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS

***ure Electronics: Single N-Channel 100 V 2.3 mOhm 168 nC OptiMOS Power Mosfet - TO-220-3

***nell: MOSFET, N-CH, 100V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***ineon: OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS Power Mosfet - TO-220-3

***ow.cn: Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-220 Tube

***ponent Stockers USA: 100 A 80 V 0.0028 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ment14 APAC: MOSFET, N CH, 100A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***icroelectronics: N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 75V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 75V, 120A, TO 220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***ineon SCT: Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 80V, 120A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.002Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPP030N10N3GXKSA1 DISTI # IPP030N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$3.1317 500:$3.7134 100:$4.5858 10:$5.5920 1:$6.2600
IPP030N10N3GXKSA1 DISTI # IPP030N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP030N10N3GXKSA1) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$2.8900 10:$2.8900 25:$2.7900 50:$2.7900 100:$2.6900 500:$2.5900 1000:$2.4900
IPP030N10N3GXKSA1. DISTI # 27AC6743	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$5.3900 10:$4.5800 25:$4.3800 50:$4.1700 100:$3.9700 250:$3.7700 500:$3.3800
IPP030N10N3GXKSA1 DISTI # 726-IPP030N10N3GXKSA	Infineon Technologies AG	MOSFET N-Ch 100V 100A TO220-3 RoHS: Compliant	0	1:$5.3900 10:$4.5800 100:$3.9700 250:$3.7700 500:$3.3800
IPP030N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	5	1000:$2.4600 500:$2.5900 100:$2.7000 25:$2.8100 1:$3.0300
IPP030N10N3GXKSA1 DISTI # 1109089P	Infineon Technologies AG	MOSFET N-CHAN OPTIMOS-3 100V 100A TO220, TU	262	20:£2.8800 100:£2.3630 200:£2.2550 500:£2.1450
IPP030N10N3GXKSA1 DISTI # 2443403	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-220-3 RoHS: Compliant	0	1:£3.8700 10:£2.9100 100:£2.2800 250:£2.2300 500:£2.1700
IPP030N10N3GXKSA1 DISTI # 2443403	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-220-3 RoHS: Compliant	0	1:$6.0300 10:$5.6300 100:$4.9800 500:$4.7100 1000:$4.4700

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Disponibilidad

Valores:: Available
En orden:: 4000
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El precio actual de IPP030N10N3GXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~5,38 US$~~; ~~5,38 US$~~

10: ~~4,57 US$~~; ~~45,70 US$~~

100: ~~3,96 US$~~; ~~396,00 US$~~

250: ~~3,76 US$~~; ~~940,00 US$~~

500: ~~3,37 US$~~; ~~1 685,00 US$~~

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IPP030N10N3GXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes