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2N6338G

2N6338G
Mfr. #:
2N6338G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 25A 100V 200W NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2N6338G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N6338G Datasheet2N6338G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SMB-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
100 V
Colector- Voltaje base VCBO:
120 V
Emisor- Voltaje base VEBO:
6 V
Voltaje de saturación colector-emisor:
1.8 V
Corriente máxima del colector de CC:
25 A
Producto de ganancia de ancho de banda fT:
40 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
2N6338
Altura:
8.51 mm
Longitud:
39.37 mm
Embalaje:
Bandeja
Ancho:
26.67 mm
Marca:
EN Semiconductor
Corriente continua del colector:
25 A
Colector de CC / Ganancia base hfe Min:
50
Pd - Disipación de energía:
200 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Unidad de peso:
0.006349 oz
Tags
2N6338, 2N633, 2N63, 2N6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
25 A, 100 V NPN Bipolar Power Transistor
***ure Electronics
2N6338 Series 100 V 25 A 200 W NPN High-Power Silicon Transistor - TO-204AA
***ical
Trans GP BJT NPN 100V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***et Europe
Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-204 Tray
***p One Stop Global
Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
***th Star Micro
...designed for use in industrial-military power amplifier and switching circuit applications.
***i-Key
TRANS NPN 100V 25A TO-3
***ment14 APAC
BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Tra; BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:40
***ark
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:40hFE; No. of Pins:2Pins; Operating Temperature Max:200�C RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
2N6338G
DISTI # V36:1790_07300925		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		1
  • 1000:$6.7280
  • 500:$7.3080
  • 200:$7.8120
  • 100:$8.2340
2N6338G
DISTI # 2N6338G-ND		ON SemiconductorTRANS NPN 100V 25A TO-3
RoHS: Compliant
Min Qty: 1
Container: Tray		93In Stock
  • 500:$8.1894
  • 100:$9.2060
  • 10:$10.9000
  • 1:$11.8600
2N6338G
DISTI # 26078079		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		200
  • 500:$6.8259
  • 200:$7.0890
  • 100:$7.4545
2N6338G
DISTI # 26065377		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		1
  • 1:$8.2340
2N6338G
DISTI # 2N6338G		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N6338G)
RoHS: Compliant
Min Qty: 100
Container: Tray		Americas - 0
  • 100:$6.9900
  • 200:$6.8900
  • 400:$6.7900
  • 600:$6.7900
  • 1000:$6.5900
2N6338G
DISTI # 26K5319		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 100V, TO-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:40hFE,No. of Pins:2Pins RoHS Compliant: Yes0
  • 1:$11.4400
  • 10:$10.5300
  • 25:$10.1000
  • 50:$9.5100
  • 100:$8.9100
  • 250:$8.4800
  • 500:$7.9400
2N6338G.
DISTI # 15AC5405		ON SemiconductorTransistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:40hFE,No. of Pins:2Pins,Operating Temperature Max:200°C RoHS Compliant: Yes0
  • 1:$11.3000
  • 10:$10.3900
  • 25:$9.9600
  • 50:$9.3700
  • 100:$8.7700
  • 250:$8.3400
  • 500:$7.8000
2N6338G
DISTI # 863-2N6338G		ON SemiconductorBipolar Transistors - BJT 25A 100V 200W NPN
RoHS: Compliant		112
  • 1:$11.3000
  • 10:$10.3900
  • 20:$9.9600
  • 100:$8.7700
  • 200:$8.3400
  • 500:$7.8000
  • 1000:$7.1600
2N6338
DISTI # 863-2N6338		ON SemiconductorBipolar Transistors - BJT 25A 100V 200W NPN
RoHS: Not compliant		0
    2N6338GON Semiconductor 
    RoHS: Not Compliant    		1314
    • 1000:$7.8700
    • 500:$8.2800
    • 100:$8.6200
    • 25:$8.9900
    • 1:$9.6800
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    		 Nuevo y original
    Disponibilidad
    Valores:
    97
    En orden:
    2080
    Ingrese la cantidad:
    El precio actual de 2N6338G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    11,30 US$
    11,30 US$
    10
    10,39 US$
    103,90 US$
    20
    9,96 US$
    199,20 US$
    100
    8,77 US$
    877,00 US$
    200
    8,34 US$
    1 668,00 US$
    500
    7,80 US$
    3 900,00 US$
    1000
    7,16 US$
    7 160,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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