IRF9953PBF

IRF9953PBF
Mfr. #:
IRF9953PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2P-CH 30V 2.3A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF9953PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Embalaje alternativo de tubo
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
2W
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
190pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
2.3A
Rds-On-Max-Id-Vgs
250 mOhm @ 1A, 10V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
12nC @ 10V
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6.9 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
- 2.3 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
250 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
20 ns
Tiempo de retardo de encendido típico
9.7 ns
Qg-Gate-Charge
6.9 nC
Modo de canal
Mejora
Tags
IRF9953, IRF995, IRF99, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V
***ure Electronics
IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET
***ernational Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC
***Components
MOSFET P-Channel 30V 2.3A SOIC8
***i-Key
MOSFET 2P-CH 30V 2.3A 8-SOIC
***ronik
2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
Parte # Mfg. Descripción Valores Precio
IRF9953TRPBF
DISTI # IRF9953PBFCT-ND
Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953TRPBF
DISTI # IRF9953PBFDKR-ND
Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953PBF
DISTI # IRF9953PBF-ND
Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF9953TRPBF
    DISTI # IRF9953PBFTR-ND
    Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 4000:$0.3683
    IRF9953PBF-EL
    DISTI # IRF9953PBF-EL
    Infineon Technologies AGTrans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL)
    RoHS: Compliant
    Min Qty: 95
    Container: Tube
    Europe - 0
      IRF9953PBF
      DISTI # 97K2255
      Infineon Technologies AGMOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes0
        IRF9953PBF
        DISTI # 942-IRF9953PBF
        Infineon Technologies AGMOSFET DUAL -30V P-CH 20V VGS MAX
        RoHS: Compliant
        0
          IRF9953PBFInternational RectifierINSTOCK130
            IRF9953PBF
            DISTI # 9102230
            Infineon Technologies AGMOSFET, DUAL, PP, LOGIC, SO-8
            RoHS: Compliant
            0
            • 1:$1.4400
            • 10:$1.1800
            • 100:$0.9280
            • 1000:$0.7800
            • 2000:$0.6870
            Imagen Parte # Descripción
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF

            MOSFET MOSFT DUAL PCh -30V 2.3A
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF

            MOSFET AUTO HEXFET SO-8
            IRF9910TR

            Mfr.#: IRF9910TR

            OMO.#: OMO-IRF9910TR-INFINEON-TECHNOLOGIES

            MOSFET 2N-CH 20V 10A 8-SOIC
            IRF9956PBF

            Mfr.#: IRF9956PBF

            OMO.#: OMO-IRF9956PBF-INFINEON-TECHNOLOGIES

            MOSFET 2N-CH 30V 3.5A 8-SOIC
            IRF9910PBF-1

            Mfr.#: IRF9910PBF-1

            OMO.#: OMO-IRF9910PBF-1-1190

            Nuevo y original
            IRF9952

            Mfr.#: IRF9952

            OMO.#: OMO-IRF9952-INFINEON-TECHNOLOGIES

            MOSFET N/P-CH 30V 8-SOIC
            IRF9952Q

            Mfr.#: IRF9952Q

            OMO.#: OMO-IRF9952Q-1190

            Nuevo y original
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF-INFINEON-TECHNOLOGIES

            MOSFET N/P-CH 30V 8-SOIC
            IRF9953TR

            Mfr.#: IRF9953TR

            OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES

            MOSFET 2P-CH 30V 2.3A 8-SOIC
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF-INFINEON-TECHNOLOGIES

            Nuevo y original
            Disponibilidad
            Valores:
            Available
            En orden:
            2500
            Ingrese la cantidad:
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