OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPZ65R065C7XKSA1

IPZ65R065C7XKSA1
Mfr. #:
IPZ65R065C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZ65R065C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPZ65R065C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
33 A
Rds On - Resistencia de la fuente de drenaje:
58 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
64 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
171 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
72 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
IPZ65R065C7 SP001080120
Unidad de peso:
1.340411 oz
Tags
IPZ65R06, IPZ65, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***el Electronic
Cap Ceramic 0.47uF 10V X5R 10% SMD 0603 85°C Paper T/R
***nell
MOSFET, N-CH, 600V, 35A, 162W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 162W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***icroelectronics
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package
***r Electronics
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4
***nell
MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package
***r Electronics
Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 600V 42A 4-Pin(4+Tab) TO-247 Tube
***icroelectronics SCT
Power MOSFETs, 600V, 42A, TO247-4, Tube
***ical
Trans MOSFET N-CH 650V 24A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 650V, 24A, 128W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 128W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***et
Trans MOSFET N-CH 650V 30A 4-Pin TO-247 Tube
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-4, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***emi
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 75 A, 23 mΩ, TO-247 4lead
***r Electronics
Power Field-Effect Transistor, 75A I(D), 650V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is suitable for various DC/AC power conversion for system miniaturization and higher efficiency.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPZ65R065C7XKSA1
DISTI # V99:2348_06378266		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$5.0320
  • 250:$5.5740
  • 100:$6.1910
  • 25:$6.8530
  • 10:$7.2550
  • 1:$8.9078
IPZ65R065C7XKSA1
DISTI # V36:1790_06378266		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$4.1880
  • 120000:$4.1930
  • 24000:$4.9060
  • 2400:$6.3810
  • 240:$6.6400
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$6.7190
IPZ65R065C7XKSA1
DISTI # 33114357		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 2:$8.9078
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZ65R065C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$4.4900
  • 1440:$4.5900
  • 960:$4.7900
  • 480:$4.8900
  • 240:$5.0900
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube - Bulk (Alt: IPZ65R065C7XKSA1)
RoHS: Compliant
Min Qty: 76
Container: Bulk		Americas - 0
  • 760:$4.0900
  • 380:$4.1900
  • 228:$4.3900
  • 152:$4.4900
  • 76:$4.6900
IPZ65R065C7XKSA1
DISTI # SP001080120		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube (Alt: SP001080120)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€3.8900
  • 500:€4.1900
  • 100:€4.3900
  • 50:€4.5900
  • 25:€4.6900
  • 10:€4.8900
  • 1:€5.3900
IPZ65R065C7XKSA1
DISTI # 84AC6851		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$5.6300
  • 250:$6.1700
  • 100:$6.4600
  • 50:$6.9500
  • 25:$7.4400
  • 10:$7.8100
  • 1:$8.6400
IPZ65R065C7
DISTI # 726-IPZ65R065C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		136
  • 1:$8.5500
  • 10:$7.7300
  • 25:$7.3700
  • 100:$6.4000
  • 250:$6.1100
  • 500:$5.5700
IPZ65R065C7XKSA1
DISTI # 726-IPZ65R065C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		140
  • 1:$8.5500
  • 10:$7.7300
  • 25:$7.3700
  • 100:$6.4000
  • 250:$6.1100
  • 500:$5.5700
IPZ65R065C7XKSA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		6896
  • 1000:$4.3300
  • 500:$4.5600
  • 100:$4.7400
  • 25:$4.9500
  • 1:$5.3300
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7		Infineon Technologies AGN-Ch 650V 33A 171W 0,065A TO247-4
RoHS: Compliant		187
  • 1:€8.5700
  • 10:€5.5700
  • 50:€4.0700
  • 100:€3.8800
IPZ65R065C7XKSA1
DISTI # 2983379		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247
RoHS: Compliant		240
  • 250:$8.3200
  • 100:$8.4900
  • 50:$8.6900
  • 10:$8.8600
  • 5:$9.0600
  • 1:$9.2300
IPZ65R065C7XKSA1
DISTI # 2983379		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247240
  • 10:£5.9400
  • 5:£6.8900
  • 1:£7.4700
Imagen Parte # Descripción
IPZ65R065C7XKSA1

Mfr.#: IPZ65R065C7XKSA1

OMO.#: OMO-IPZ65R065C7XKSA1

 MOSFET HIGH POWER_NEW
IPZ65R065C7

Mfr.#: IPZ65R065C7

OMO.#: OMO-IPZ65R065C7-1190

 MOSFET HIGH POWER_NEW
IPZ65R065C7(65C7065)

Mfr.#: IPZ65R065C7(65C7065)

OMO.#: OMO-IPZ65R065C7-65C7065--1190

 Nuevo y original
IPZ65R065C7XKSA1

Mfr.#: IPZ65R065C7XKSA1

OMO.#: OMO-IPZ65R065C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V TO247-4
Disponibilidad
Valores:
140
En orden:
2123
Ingrese la cantidad:
El precio actual de IPZ65R065C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,55 US$
8,55 US$
10
7,73 US$
77,30 US$
25
7,37 US$
184,25 US$
100
6,40 US$
640,00 US$
250
6,11 US$
1 527,50 US$
500
5,57 US$
2 785,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top