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IPZ65R065C7XKSA1

IPZ65R065C7XKSA1
Mfr. #:
IPZ65R065C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 650V TO247-4
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZ65R065C7XKSA1 Ficha de datos
Entrega:
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Más información:
IPZ65R065C7XKSA1 más información
Atributo del producto
Valor de atributo
Tags
IPZ65R06, IPZ65, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 650V, 33A, 171W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPZ65R065C7XKSA1
DISTI # V99:2348_06378266		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$5.0320
  • 250:$5.5740
  • 100:$6.1910
  • 25:$6.8530
  • 10:$7.2550
  • 1:$8.9078
IPZ65R065C7XKSA1
DISTI # V36:1790_06378266		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$4.1880
  • 120000:$4.1930
  • 24000:$4.9060
  • 2400:$6.3810
  • 240:$6.6400
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$6.7190
IPZ65R065C7XKSA1
DISTI # 33114357		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 2:$8.9078
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZ65R065C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$4.4900
  • 1440:$4.5900
  • 960:$4.7900
  • 480:$4.8900
  • 240:$5.0900
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube - Bulk (Alt: IPZ65R065C7XKSA1)
RoHS: Compliant
Min Qty: 76
Container: Bulk		Americas - 0
  • 760:$4.0900
  • 380:$4.1900
  • 228:$4.3900
  • 152:$4.4900
  • 76:$4.6900
IPZ65R065C7XKSA1
DISTI # SP001080120		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 4-Pin TO-247 Tube (Alt: SP001080120)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€3.8900
  • 500:€4.1900
  • 100:€4.3900
  • 50:€4.5900
  • 25:€4.6900
  • 10:€4.8900
  • 1:€5.3900
IPZ65R065C7XKSA1
DISTI # 84AC6851		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$5.6300
  • 250:$6.1700
  • 100:$6.4600
  • 50:$6.9500
  • 25:$7.4400
  • 10:$7.8100
  • 1:$8.6400
IPZ65R065C7
DISTI # 726-IPZ65R065C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		136
  • 1:$8.5500
  • 10:$7.7300
  • 25:$7.3700
  • 100:$6.4000
  • 250:$6.1100
  • 500:$5.5700
IPZ65R065C7XKSA1
DISTI # 726-IPZ65R065C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		140
  • 1:$8.5500
  • 10:$7.7300
  • 25:$7.3700
  • 100:$6.4000
  • 250:$6.1100
  • 500:$5.5700
IPZ65R065C7XKSA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		6896
  • 1000:$4.3300
  • 500:$4.5600
  • 100:$4.7400
  • 25:$4.9500
  • 1:$5.3300
IPZ65R065C7XKSA1
DISTI # IPZ65R065C7		Infineon Technologies AGN-Ch 650V 33A 171W 0,065A TO247-4
RoHS: Compliant		187
  • 1:€8.5700
  • 10:€5.5700
  • 50:€4.0700
  • 100:€3.8800
IPZ65R065C7XKSA1
DISTI # 2983379		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247
RoHS: Compliant		240
  • 250:$8.3200
  • 100:$8.4900
  • 50:$8.6900
  • 10:$8.8600
  • 5:$9.0600
  • 1:$9.2300
IPZ65R065C7XKSA1
DISTI # 2983379		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, 171W, TO-247240
  • 10:£5.9400
  • 5:£6.8900
  • 1:£7.4700
Imagen Parte # Descripción
IPZ65R065C7XKSA1

Mfr.#: IPZ65R065C7XKSA1

OMO.#: OMO-IPZ65R065C7XKSA1

 MOSFET HIGH POWER_NEW
IPZ65R065C7

Mfr.#: IPZ65R065C7

OMO.#: OMO-IPZ65R065C7-1190

 MOSFET HIGH POWER_NEW
IPZ65R065C7(65C7065)

Mfr.#: IPZ65R065C7(65C7065)

OMO.#: OMO-IPZ65R065C7-65C7065--1190

 Nuevo y original
IPZ65R065C7XKSA1

Mfr.#: IPZ65R065C7XKSA1

OMO.#: OMO-IPZ65R065C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V TO247-4
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Valores:
Available
En orden:
2500
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