OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SI2366DS-T1-GE3

SI2366DS-T1-GE3
Mfr. #:
SI2366DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2366DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2366DS-T1-GE3 DatasheetSI2366DS-T1-GE3 Datasheet (P4-P6)SI2366DS-T1-GE3 Datasheet (P7-P9)SI2366DS-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:
SI2366DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
36 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
6.4 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.1 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Tipo de transistor:
1 N-Channel
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
13 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
5 ns
Parte # Alias:
SI2366DS-GE3
Unidad de peso:
0.000282 oz
Tags
SI236, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI2366DS-T1-GE3 N-channel MOSFET Transistor; 5.8 A; 30 V; 3-Pin SOT-23
***et
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
***nell
MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2366DS-T1-GE3
DISTI # V72:2272_09216818		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant		1932
  • 1000:$0.1655
  • 500:$0.2081
  • 250:$0.2557
  • 100:$0.2661
  • 25:$0.3533
  • 10:$0.3927
  • 1:$0.5087
SI2366DS-T1-GE3
DISTI # V36:1790_09216818		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 300000:$0.1460
  • 3000:$0.1628
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		883In Stock
  • 1000:$0.1839
  • 500:$0.2379
  • 100:$0.3028
  • 10:$0.4060
  • 1:$0.4700
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		883In Stock
  • 1000:$0.1839
  • 500:$0.2379
  • 100:$0.3028
  • 10:$0.4060
  • 1:$0.4700
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 75000:$0.1330
  • 30000:$0.1344
  • 15000:$0.1417
  • 6000:$0.1522
  • 3000:$0.1628
SI2366DS-T1-GE3
DISTI # 32899058		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant		1932
  • 1000:$0.1779
  • 500:$0.2237
  • 250:$0.2749
  • 100:$0.2861
  • 46:$0.3798
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R (Alt: SI2366DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1379
  • 18000:€0.1489
  • 12000:€0.1609
  • 6000:€0.1869
  • 3000:€0.2749
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2366DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1279
  • 18000:$0.1309
  • 12000:$0.1349
  • 6000:$0.1409
  • 3000:$0.1449
SI2366DS-T1-GE3
DISTI # 99W9604		Vishay IntertechnologiesMOSFET Transistor, N Channel, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V0
  • 50000:$0.1290
  • 30000:$0.1350
  • 20000:$0.1450
  • 10000:$0.1550
  • 5000:$0.1680
  • 1:$0.1720
SI2366DS-T1-GE3
DISTI # 70459517		Vishay SiliconixSI2366DS-T1-GE3 N-channel MOSFET Transistor,5.8 A,30 V,3-Pin SOT-23
RoHS: Compliant		0
  • 3000:$0.3760
  • 6000:$0.3220
SI2366DS-T1-GE3
DISTI # 78-SI2366DS-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
RoHS: Compliant		30176
  • 1:$0.4700
  • 10:$0.3610
  • 100:$0.2680
  • 500:$0.2200
  • 1000:$0.1700
  • 3000:$0.1540
  • 6000:$0.1440
  • 9000:$0.1350
SI2366DS-T1-GE3
DISTI # 8123132		Vishay IntertechnologiesTRANS MOSFET N-CH 30V 4.5A 3-PIN, PK1100
  • 3000:£0.1500
  • 1500:£0.1530
  • 600:£0.1660
  • 300:£0.2020
  • 20:£0.2810
SI2366DS-T1-GE3
DISTI # 8123132P		Vishay IntertechnologiesTRANS MOSFET N-CH 30V 4.5A 3-PIN, RL8880
  • 3000:£0.1500
  • 1500:£0.1530
  • 600:£0.1660
  • 300:£0.2020
SI2366DS-T1-GE3
DISTI # 2056680RL		Vishay IntertechnologiesMOSFET, N CH, W/D, 30V, 5.8A, SOT23
RoHS: Compliant		0
  • 1000:$0.2950
  • 500:$0.3830
  • 100:$0.5220
  • 10:$0.6970
  • 1:$0.8310
SI2366DS-T1-GE3
DISTI # 2056680		Vishay IntertechnologiesMOSFET, N CH, W/D, 30V, 5.8A, SOT23
RoHS: Compliant		0
  • 1000:$0.2950
  • 500:$0.3830
  • 100:$0.5220
  • 10:$0.6970
  • 1:$0.8310
Imagen Parte # Descripción
THS3095DDA

Mfr.#: THS3095DDA

OMO.#: OMO-THS3095DDA

 High Speed Operational Amplifiers Single Lo-Distort Current Feedback
AD9508BCPZ

Mfr.#: AD9508BCPZ

OMO.#: OMO-AD9508BCPZ

 Clock Drivers & Distribution 1.65GHz Fan Out Buffer
DAC7571IDBVR

Mfr.#: DAC7571IDBVR

OMO.#: OMO-DAC7571IDBVR

 Digital to Analog Converters - DAC Lo-Pwr R-To-R Output 12-Bit I2C Input
2N7002DWH6327XTSA1

Mfr.#: 2N7002DWH6327XTSA1

OMO.#: OMO-2N7002DWH6327XTSA1

 MOSFET N-Ch 60V 300mA SOT-363-6
NCP718ASN500T1G

Mfr.#: NCP718ASN500T1G

OMO.#: OMO-NCP718ASN500T1G

 LDO Voltage Regulators 300 MA LOW IQ WIDE INPUT 5.0V
LM1117IMP-3.3/NOPB

Mfr.#: LM1117IMP-3.3/NOPB

OMO.#: OMO-LM1117IMP-3-3-NOPB

 LDO Voltage Regulators 800MA LDO LINEAR REG
EEE-FP1E331AP

Mfr.#: EEE-FP1E331AP

OMO.#: OMO-EEE-FP1E331AP

 Aluminum Electrolytic Capacitors - SMD 330UF 25V ELECT FP SMD
LMK61E2-SIAT

Mfr.#: LMK61E2-SIAT

OMO.#: OMO-LMK61E2-SIAT

 Programmable Oscillators Ultra-Low Jitter Fully Programmable Oscillator, Integrated EEPROM, +/-50ppm 8-QFM -40 to 85
AD9508BCPZ

Mfr.#: AD9508BCPZ

OMO.#: OMO-AD9508BCPZ-ANALOG-DEVICES-INC-ADI

 Clock Drivers & Distribution 1.65GHz Fan Out Buffe
THS3095DDA

Mfr.#: THS3095DDA

OMO.#: OMO-THS3095DDA-TEXAS-INSTRUMENTS

 High Speed Operational Amplifiers Single Lo-Distort Current Feedback
Disponibilidad
Valores:
19
En orden:
2002
Ingrese la cantidad:
El precio actual de SI2366DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,47 US$
0,47 US$
10
0,36 US$
3,61 US$
100
0,27 US$
26,80 US$
500
0,22 US$
110,00 US$
1000
0,17 US$
170,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • -12 V and -20 V P-Channel Gen III MOSFETs
    -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • Compare SI2366DS-T1-GE3
    Compare SI2366DS-T1-GE3
    SI2365EDST1E3 vs SI2365EDST1GE3 vs SI2365EDST1GE3CUTTAPE
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
More Newest Products
Top