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IKW30N65NL5XKSA1

IKW30N65NL5XKSA1
Mfr. #:
IKW30N65NL5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 650V IGBT Trenchstop 5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW30N65NL5XKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IKW30N65NL5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
IGBTs - Single
Serie
TrenchStop 5
embalaje
Tubo
Alias ​​de parte
IKW30N65NL5 SP001174466
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
PG-TO247-3
Configuración
Único
Potencia máxima
227W
Tiempo de recuperación inverso trr
59ns
Colector-corriente-Ic-Max
85A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
-
Colector de corriente pulsado Icm
120A
Vce-en-Max-Vge-Ic
1.35V @ 15V, 30A
Energía de conmutación
560μJ (on), 1.35mJ (off)
Gate-Charge
168nC
Td-encendido-apagado-25 ° C
59ns/283ns
Condición de prueba
400V, 30A, 23 Ohm, 15V
Disipación de potencia Pd
227 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 40 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
1.05 V
Corriente-de-colector-continuo-a-25-C
85 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
20 V
Tags
IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Parte # Mfg. Descripción Valores Precio
IKW30N65NL5XKSA1
DISTI # V99:2348_06378702		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9670
  • 10:$4.6000
  • 1:$6.0038
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A UFAST DIO TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.2523
IKW30N65NL5XKSA1
DISTI # 27492280		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9630
  • 10:$4.6000
  • 3:$5.4580
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Bulk (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 140
Container: Bulk		Americas - 0
  • 1400:$2.1900
  • 420:$2.2900
  • 700:$2.2900
  • 280:$2.3900
  • 140:$2.4900
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.5900
  • 2400:$2.5900
  • 960:$2.6900
  • 480:$2.7900
  • 240:$2.8900
IKW30N65NL5XKSA1
DISTI # SP001174466		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174466)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 10:€2.4900
  • 25:€2.4900
  • 1:€2.5900
IKW30N65NL5XKSA1
DISTI # 34AC1631		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes159
  • 500:$3.4700
  • 250:$3.8800
  • 100:$4.0900
  • 50:$4.3000
  • 25:$4.5100
  • 10:$4.7200
  • 1:$5.5400
IKW30N65NL5XKSA1
DISTI # 726-IKW30N65NL5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		2519
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65NL5XKSA1Infineon Technologies AG 
RoHS: Not Compliant		70
  • 1000:$2.3600
  • 500:$2.4800
  • 100:$2.5800
  • 25:$2.6900
  • 1:$2.9000
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		159
  • 1000:$3.8200
  • 500:$4.0000
  • 250:$4.2200
  • 100:$4.4500
  • 10:$5.0400
  • 1:$5.3900
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247159
  • 100:£3.4500
  • 10:£3.9800
  • 1:£5.1900
Imagen Parte # Descripción
IKW30N65ES5XKSA1

Mfr.#: IKW30N65ES5XKSA1

OMO.#: OMO-IKW30N65ES5XKSA1

 IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
IKW30N65NL5XKSA1

Mfr.#: IKW30N65NL5XKSA1

OMO.#: OMO-IKW30N65NL5XKSA1

 IGBT Transistors 650V IGBT Trenchstop 5
IKW30N65H5XKSA1

Mfr.#: IKW30N65H5XKSA1

OMO.#: OMO-IKW30N65H5XKSA1

 IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
IKW30N65EL5XKSA1

Mfr.#: IKW30N65EL5XKSA1

OMO.#: OMO-IKW30N65EL5XKSA1

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IKW30N65WR5XKSA1

Mfr.#: IKW30N65WR5XKSA1

OMO.#: OMO-IKW30N65WR5XKSA1

 IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/perform
IKW30N65WR5XKSA1

Mfr.#: IKW30N65WR5XKSA1

OMO.#: OMO-IKW30N65WR5XKSA1-INFINEON-TECHNOLOGIES

 IGBT TRENCH 650V 60A TO247-3
IKW30N65H5

Mfr.#: IKW30N65H5

OMO.#: OMO-IKW30N65H5-1190

 650V,55A,IGBT with Anti-Parallel Diode
IKW30N65W5

Mfr.#: IKW30N65W5

OMO.#: OMO-IKW30N65W5-1190

 Nuevo y original
IKW30N65WR5

Mfr.#: IKW30N65WR5

OMO.#: OMO-IKW30N65WR5-1190

 650V,60A,IGBT with Anti-Parallel Diode
IKW30N65NL5XKSA1

Mfr.#: IKW30N65NL5XKSA1

OMO.#: OMO-IKW30N65NL5XKSA1-INFINEON-TECHNOLOGIES

 IGBT Transistors 650V IGBT Trenchstop 5
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IKW30N65NL5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,28 US$
3,28 US$
10
3,12 US$
31,21 US$
100
2,96 US$
295,65 US$
500
2,79 US$
1 396,15 US$
1000
2,63 US$
2 628,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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