IKZ75N65ES5XKSA1

Mfr. #:: IKZ75N65ES5XKSA1
Fabricante:: Infineon Technologies
Descripción:: IGBT TRENCH 650V 80A TO247-4
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IKZ75N65ES5XKSA1 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:: IKZ75N65ES5XKSA1 más información

Atributo del producto
Valor de atributo

Tags: IKZ75N65E, IKZ7, IKZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKZ75N65ES5XKSA1 Descripción

***Components: In a Tube of 30, Infineon IKZ75N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247

***ical: Trans IGBT Chip N-CH 650V 80A 395000mW 4-Pin(4+Tab) TO-247 Tube

***i-Key: IGBT TRENCH 650V 80A TO247-4

***ronik: IGBT 650V 75A 1,42V TO247-4

***et Europe: IGBT PRODUCTS

***ark: Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: TRANSISTOR, IGBT, CA-N, 650V, 80A, TO247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.42V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Very low control inductance loop; Extra emitter pin, the forth package pin, for driver feedback; Same creepage distance of collector emitter as standard TO-247 package | Benefits: Over 20% total switching loses reduction compared to standard TO-247-3; System efficiency improvement or power density increase compared to standard TO-247-3 | Target Applications: Industrial UPS; Industrial SMPS; Energy Storage; Charger; Welding

IKZ75N65ES5XKSA1 Más información

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs: Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IKZ75N65ES5XKSA1 DISTI # V36:1790_18195630	Infineon Technologies AG	IKZ75N65ES5XKSA1	0	240000:$3.9170 120000:$3.9220 24000:$4.7390 2400:$6.4650 240:$6.7700
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 80A TO247-4 RoHS: Compliant Min Qty: 1 Container: Tube	220In Stock	720:$5.4726 240:$6.2847 25:$7.2380 10:$7.5910 1:$8.4000
IKZ75N65ES5XKSA1 DISTI # SP001602592	Infineon Technologies AG	IGBT PRODUCTS (Alt: SP001602592) RoHS: Compliant Min Qty: 1	Europe - 240	1000:€3.6900 500:€3.7900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.5900 1:€5.6900
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5XKSA1	Infineon Technologies AG	IGBT PRODUCTS - Rail/Tube (Alt: IKZ75N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.1900 1440:$4.2900 960:$4.4900 480:$4.5900 240:$4.7900
IKZ75N65ES5XKSA1 DISTI # IKZ75N65ES5	Infineon Technologies AG	IGBT PRODUCTS (Alt: IKZ75N65ES5) RoHS: Compliant Min Qty: 240	Asia - 0	12000:$4.2565 6000:$4.3110 2400:$4.3670 1200:$4.4245 720:$4.5441 480:$4.6703 240:$4.8037
IKZ75N65ES5XKSA1 DISTI # 24AC9033	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.42V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes	21	500:$5.2600 250:$5.7700 100:$6.0400 50:$6.5000 25:$6.9600 10:$7.3000 1:$8.0700
IKZ75N65ES5XKSA1 DISTI # 726-IKZ75N65ES5XKSA1	Infineon Technologies AG	IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l RoHS: Compliant	192	1:$7.9900 10:$7.2300 25:$6.8900 100:$5.9800 250:$5.7100 500:$5.2100
IKZ75N65ES5XKSA1 DISTI # 2771419	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247	71	100:£4.3300 50:£4.6700 10:£5.0000 5:£5.4000 1:£5.8000
IKZ75N65ES5XKSA1 DISTI # XSKDRABV0021139	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$5.5500 240:$5.9500
IKZ75N65ES5XKSA1 DISTI # 2771419	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247 RoHS: Compliant	21	720:$8.2500 240:$9.4800 25:$10.9100 10:$11.4400 1:$12.6600

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IKZ75N65ES5XKSA1 OMO.#: OMO-IKZ75N65ES5XKSA1	IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-2
	Mfr.#: IKZ75N65EL5XKSA1 OMO.#: OMO-IKZ75N65EL5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65EH5XKSA1 OMO.#: OMO-IKZ75N65EH5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65NH5XKSA1 OMO.#: OMO-IKZ75N65NH5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKZ75N65EH5 OMO.#: OMO-IKZ75N65EH5-1190	Trans IGBT Chip N-CH 650V 90A 4-Pin(4+Tab) TO-247
	Mfr.#: IKZ75N65EH5 K75EEH5 OMO.#: OMO-IKZ75N65EH5-K75EEH5-1190	Nuevo y original
	Mfr.#: IKZ75N65EH5XKSA1 OMO.#: OMO-IKZ75N65EH5XKSA1-INFINEON-TECHNOLOGIES	IGBT 650V 90A W/DIO TO247-4
	Mfr.#: IKZ75N65EL5 OMO.#: OMO-IKZ75N65EL5-1190	650V,100A,IGBT with Anti-Parallel Diode
	Mfr.#: IKZ75N65ES5XKSA1 OMO.#: OMO-IKZ75N65ES5XKSA1-INFINEON-TECHNOLOGIES	IGBT TRENCH 650V 80A TO247-4
	Mfr.#: IKZ75N65NH5 K75ENH5 OMO.#: OMO-IKZ75N65NH5-K75ENH5-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de IKZ75N65ES5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~5,88 US$~~; ~~5,88 US$~~

10: ~~5,58 US$~~; ~~55,82 US$~~

100: ~~5,29 US$~~; ~~528,80 US$~~

500: ~~4,99 US$~~; ~~2 497,10 US$~~

1000: ~~4,70 US$~~; ~~4 700,40 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

IKZ75N65E 6
IKZ7 9
IKZ 15

Nuevos productos

High Current IR3847 Gen3 SupIRBuck®

IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
KITXMC48IOTAWSWIFITOBO1 Base Kit Featuring an XMC4

Infineon's KITXMC48IOTAWSWIFITOBO1 is a base kit featuring an XMC4800 MCU that includes connectors in Arduino and Click Board™ compatible form factors.
IR25750 Current Sensing IC

IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
OptiMOS 3 Devices

OptiMOS 3 devices from Infineon are intended for power conversion and power management applications that require high efficiency and power density.
XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.

More Newest Products

IKZ75N65ES5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes