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IKZ75N65EH5XKSA1

IKZ75N65EH5XKSA1
Mfr. #:
IKZ75N65EH5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKZ75N65EH5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IKZ75N65EH5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-4
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
90 A
Pd - Disipación de energía:
395 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Embalaje:
Tubo
Altura:
20.7 mm
Longitud:
15.87 mm
Ancho:
5.31 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKZ75N65EH5 SP001160046
Tags
IKZ75N65EH, IKZ75N65E, IKZ7, IKZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IKZ75N65EH5 Series 650 V 90 A Through Hole DuoPack IGBT - PG-TO-247-4
***ark
Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:4Pins; Rohs Compliant: Yes |Infineon IKZ75N65EH5XKSA1
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***ical
Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.2pF 50volts C0G +/-0.1pF
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ark
Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***ical
Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.1pF 50volts C0G +/-0.25pF
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***ow.cn
Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.50pF 25volts C0G +/-0.1pF
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***ow.cn
Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 161A, To-247; Dc Collector Current:161A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:4Pins; Rohs Compliant: Yes |Infineon IGZ100N65H5XKSA1
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
***et
Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube
***ineon SCT
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descripción Valores Precio
IKZ75N65EH5XKSA1
DISTI # 32028891		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube480
  • 3:$3.9686
IKZ75N65EH5XKSA1
DISTI # IKZ75N65EH5XKSA1-5-ND		Infineon Technologies AGIGBT 650V 90A W/DIO TO247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$6.2847
IKZ75N65EH5XKSA1
DISTI # V99:2348_06376922		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube0
  • 240000:$4.2110
  • 120000:$4.2140
  • 24000:$4.5470
  • 2400:$5.1650
  • 240:$5.2700
IKZ75N65EH5XKSA1
DISTI # V36:1790_06376922		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube0
  • 240000:$3.9170
  • 120000:$3.9210
  • 24000:$4.3370
  • 2400:$5.1330
  • 240:$5.2700
IKZ75N65EH5XKSA1
DISTI # SP001160046		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube (Alt: SP001160046)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.2900
  • 1:€4.6900
IKZ75N65EH5XKSA1
DISTI # IKZ75N65EH5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube - Bulk (Alt: IKZ75N65EH5XKSA1)
RoHS: Compliant
Min Qty: 87
Container: Bulk		Americas - 0
  • 870:$3.5900
  • 435:$3.6900
  • 261:$3.7900
  • 174:$3.9900
  • 87:$4.0900
IKZ75N65EH5XKSA1
DISTI # IKZ75N65EH5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube - Rail/Tube (Alt: IKZ75N65EH5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$4.1900
  • 1440:$4.2900
  • 960:$4.4900
  • 480:$4.5900
  • 240:$4.7900
IKZ75N65EH5XKSA1
DISTI # 34AC1637		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247,DC Collector Current:90A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes1910
  • 500:$5.7100
  • 250:$6.1900
  • 100:$6.4500
  • 50:$6.8900
  • 25:$7.3200
  • 10:$7.6300
  • 1:$8.3700
IKZ75N65EH5XKSA1Infineon Technologies AGIKZ75N65EH5 Series 650 V 90 A Through Hole DuoPack IGBT - PG-TO-247-4
RoHS: Not Compliant		15Tube
  • 240:$3.9600
IKZ75N65EH5XKSA1
DISTI # 726-IKZ75N65EH5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		508
  • 1:$7.9900
  • 10:$7.2300
  • 25:$6.8900
  • 100:$5.9800
  • 250:$5.7100
  • 500:$5.2100
IKZ75N65EH5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		80
  • 1000:$3.8200
  • 500:$4.0200
  • 100:$4.1800
  • 25:$4.3600
  • 1:$4.7000
IKZ75N65EH5XKSA1
DISTI # 1623291		Infineon Technologies AGIGBT 650V 75A TRENCHSTOP5 DIODE TO-247, TU130
  • 600:£3.7460
  • 300:£4.0210
  • 150:£4.3400
  • 30:£4.7150
IKZ75N65EH5XKSA1
DISTI # IKZ75N65EH5		Infineon Technologies AGTransistor: IGBT,650V,75A,197W,TO247-4,Series: H514
  • 30:$5.4100
  • 10:$6.0100
  • 3:$6.8100
  • 1:$7.5700
IKZ75N65EH5XKSA1
DISTI # IKZ75N65EH5		Infineon Technologies AG650V 90A 395W TO247-4
RoHS: Compliant		230
  • 1:€7.5000
  • 10:€4.5000
  • 50:€3.5000
  • 100:€3.3700
IKZ75N65EH5XKSA1
DISTI # 2781037		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247
RoHS: Compliant		1910
  • 10:$7.2100
  • 5:$8.1600
  • 1:$8.7200
IKZ75N65EH5XKSA1
DISTI # XSKDRABV0021138		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$5.5500
  • 240:$5.9500
IKZ75N65EH5XKSA1
DISTI # 2781037		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-2471910
  • 100:£4.5600
  • 50:£4.9100
  • 10:£5.2600
  • 5:£6.1000
  • 1:£6.6400
Imagen Parte # Descripción
IKQ75N120CH3XKSA1

Mfr.#: IKQ75N120CH3XKSA1

OMO.#: OMO-IKQ75N120CH3XKSA1

 IGBT Transistors IGBT PRODUCTS
FFSH1665A

Mfr.#: FFSH1665A

OMO.#: OMO-FFSH1665A

 Schottky Diodes & Rectifiers 650V 16A SIC SBD
SF-0603FP015F-2

Mfr.#: SF-0603FP015F-2

OMO.#: OMO-SF-0603FP015F-2

 Surface Mount Fuses .15A Fast Act Prec 0603 SinglFuse
CRCW0603200KFKEAC

Mfr.#: CRCW0603200KFKEAC

OMO.#: OMO-CRCW0603200KFKEAC

 Thick Film Resistors - SMD 1/10Watt 200Kohms 1% Commercial Use
IKQ75N120CH3XKSA1

Mfr.#: IKQ75N120CH3XKSA1

OMO.#: OMO-IKQ75N120CH3XKSA1-INFINEON-TECHNOLOGIES

 IGBT HS SW 1200V 75A TO-247-3
CRCW06031M00FKEAC

Mfr.#: CRCW06031M00FKEAC

OMO.#: OMO-CRCW06031M00FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 1M0 1% ET1
CRCW0603200KFKEAC

Mfr.#: CRCW0603200KFKEAC

OMO.#: OMO-CRCW0603200KFKEAC-VISHAY-DALE

 Standard Thick Film Chip Resistors
CRCW060315K0FKEAC

Mfr.#: CRCW060315K0FKEAC

OMO.#: OMO-CRCW060315K0FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 15K 1% ET1
C0805X105K3RAC7210

Mfr.#: C0805X105K3RAC7210

OMO.#: OMO-C0805X105K3RAC7210-KEMET

 CAP, 1F, 25V, 10%, X7R, 0805
FFSH1665A

Mfr.#: FFSH1665A

OMO.#: OMO-FFSH1665A-ON-SEMICONDUCTOR

 650V 16A SIC SBD
Disponibilidad
Valores:
508
En orden:
2491
Ingrese la cantidad:
El precio actual de IKZ75N65EH5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,99 US$
7,99 US$
10
7,23 US$
72,30 US$
25
6,89 US$
172,25 US$
100
5,98 US$
598,00 US$
250
5,71 US$
1 427,50 US$
500
5,21 US$
2 605,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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