SGH40N60UFTU

SGH40N60UFTU
Mfr. #:
SGH40N60UFTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors Dis High Perf IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SGH40N60UFTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
160 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SGH40N60UF
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Altura:
18.9 mm
Longitud:
15.8 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
40 A
Corriente de fuga puerta-emisor:
+/- 100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225789 oz
Tags
SGH40N60U, SGH4, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan,600V V(Br)Ces,40A I(C),To-247Var Rohs Compliant: Yes
***Yang
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT HI PERFORM 600V 20A TO-3P
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
*** Services
CoC and 2-years warranty / RFQ for pricing
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature.
***inecomponents.com
Trans IGBT Chip N-CH 600V 40A 3-Pin (3+Tab) TO-220 Rail
***i-Key
IGBT 600V 40A 160W TO220
***ser
IGBTs Dis,High Perf IGBT
***el Electronic
RES SMD 2.2M OHM 1% 1/16W 0402
***i-Key Marketplace
N-CHANNEL IGBT
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(2+Tab) D2PAK Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS
***ure Electronics
IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC40UD-EPBF
***ure Electronics
IRG4PC40U Series 600 V 20 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.72 V Current release time: 80 ns Power dissipation: 160 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.4V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (17-Dec-2015); Cur
***p One Stop Global
Trans IGBT Chip N-CH 600V 42A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4P Series Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 140 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:42A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 42A, TO-247AC; Transistor Type:IGBT; DC Collector Current:42A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:42A; Current Temperature:25°C; Fall Time Max:150ns; Fall Time Typ:140ns; Fall Time tf:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:84A; Rise Time:37ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220
***el Electronic
STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube
***ark
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant: Yes
***icroelectronics SCT
Short-circuit rugged IGBT, TO-220, Tube
*** Electronic Components
IGBT Transistors 600V 20A High Speed Trench Gate IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
***et
STMICROELECTRONICS STGP20V60DF
Parte # Mfg. Descripción Valores Precio
SGH40N60UFTU
DISTI # 26733870
ON SemiconductorDISCRETE, HIGH PERFORMANCE IGB1350
  • 450:$3.0090
SGH40N60UFTU
DISTI # SGH40N60UFTU-ND
ON SemiconductorIGBT 600V 40A 160W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
421In Stock
  • 1350:$2.8093
  • 900:$3.3310
  • 450:$3.7123
  • 10:$4.7760
  • 1:$5.3200
SGH40N60UFTU
DISTI # SGH40N60UFTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH40N60UFTU)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.0900
SGH40N60UFTU
DISTI # SGH40N60UFTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH40N60UFTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.3900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€2.0900
  • 500:€1.9900
  • 1000:€1.9900
SGH40N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant
74876
  • 1000:$4.0700
  • 500:$4.2900
  • 100:$4.4600
  • 25:$4.6600
  • 1:$5.0100
SGH40N60UFTU
DISTI # 512-SGH40N60UFTU
ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant
159
  • 1:$5.0600
  • 10:$4.3000
  • 100:$3.7300
  • 250:$3.5400
Imagen Parte # Descripción
UCC28060DR

Mfr.#: UCC28060DR

OMO.#: OMO-UCC28060DR

Power Factor Correction - PFC Nat Interleaved Dual Phase
IKW60N60H3

Mfr.#: IKW60N60H3

OMO.#: OMO-IKW60N60H3

IGBT Transistors IGBT PRODUCTS TrenchStop
IKW15N120H3

Mfr.#: IKW15N120H3

OMO.#: OMO-IKW15N120H3

IGBT Transistors IGBT PRODUCTS
IPW60R045CPA

Mfr.#: IPW60R045CPA

OMO.#: OMO-IPW60R045CPA

MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA
SG3525AN

Mfr.#: SG3525AN

OMO.#: OMO-SG3525AN

Switching Controllers Voltage Mode w/Sync
B43640A9687M000

Mfr.#: B43640A9687M000

OMO.#: OMO-B43640A9687M000

Aluminum Electrolytic Capacitors - Snap In 400VDC 680uF 20% PVC STD 6.3mm Term
110-13-316-41-001000

Mfr.#: 110-13-316-41-001000

OMO.#: OMO-110-13-316-41-001000

IC & Component Sockets 16P GLD PIN GLD CONT
EC12E2420802

Mfr.#: EC12E2420802

OMO.#: OMO-EC12E2420802-391

Encoders 12mm 24 Res 24 Dtent 20mm operating sectn
IKW60N60H3

Mfr.#: IKW60N60H3

OMO.#: OMO-IKW60N60H3-1190

Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: SP000919762)
SG3525AN

Mfr.#: SG3525AN

OMO.#: OMO-SG3525AN-STMICROELECTRONICS

IC REG CTRLR PUSH-PULL 16DIP
Disponibilidad
Valores:
136
En orden:
2119
Ingrese la cantidad:
El precio actual de SGH40N60UFTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,05 US$
5,05 US$
10
4,30 US$
43,00 US$
100
3,72 US$
372,00 US$
250
3,53 US$
882,50 US$
500
3,17 US$
1 585,00 US$
1000
2,67 US$
2 670,00 US$
2500
2,54 US$
6 350,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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