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IXXH80N65B4H1

IXXH80N65B4H1
Mfr. #:
IXXH80N65B4H1
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXXH80N65B4H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IXXH80N65B4H1 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
IGBTs - Single
Serie
GenX4, XPT
embalaje
Tubo
Unidad de peso
0.158733 oz
Estilo de montaje
A través del orificio
Nombre comercial
XPT
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247 (IXXH)
Configuración
Único
Potencia máxima
625W
Tiempo de recuperación inverso trr
150ns
Colector-corriente-Ic-Max
160A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
PT
Colector de corriente pulsado Icm
430A
Vce-en-Max-Vge-Ic
2V @ 15V, 80A
Energía de conmutación
3.77mJ (on), 1.2mJ (off)
Gate-Charge
120nC
Td-encendido-apagado-25 ° C
38ns/120ns
Condición de prueba
400V, 80A, 3 Ohm, 15V
Disipación de potencia Pd
625 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
1.65 V
Corriente-de-colector-continuo-a-25-C
160 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
20 V
Colector-continuo-Corriente-Ic-Max
80 A
Tags
IXXH8, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXXH80N65B4H1
DISTI # 30706002		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		69
  • 1000:$4.7616
  • 500:$5.4720
  • 250:$5.9520
  • 100:$6.5280
  • 50:$6.6048
  • 25:$7.2288
  • 10:$7.9392
  • 3:$8.8128
IXXH80N65B4H1
DISTI # 30292435		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 2:$8.5220
IXXH80N65B4H1
DISTI # IXXH80N65B4H1-ND		IXYS CorporationIGBT 650V 160A 625W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		3446In Stock
  • 1020:$4.9612
  • 510:$5.6963
  • 270:$6.2475
  • 120:$6.7988
  • 30:$7.5337
  • 10:$8.2690
  • 1:$9.1900
IXXH80N65B4H1
DISTI # V99:2348_15876179		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 1000:$4.5570
  • 500:$5.2280
  • 250:$5.7240
  • 100:$6.2660
  • 50:$6.5760
  • 25:$7.0130
  • 10:$7.7040
  • 1:$8.5399
IXXH80N65B4H1
DISTI # 747-IXXH80N65B4H1		IXYS CorporationIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
RoHS: Compliant		533
  • 1:$9.1800
  • 10:$8.2700
  • 25:$7.5300
  • 50:$6.8800
  • 100:$6.8000
  • 250:$6.2000
  • 500:$5.7000
  • 1000:$4.9600
IXXH80N65B4H1
DISTI # 1258049		IXYS CorporationIGBT 80A 650V TO247AD, EA169
  • 60:£5.0900
  • 30:£5.1900
  • 10:£5.4400
  • 5:£5.7300
  • 1:£6.4600
IXXH80N65B4H1
DISTI # IXXH80N65B4H1		IXYS CorporationTransistor: IGBT,GenX4™,650V,80A,625W,TO247-346
  • 1:$7.2900
  • 3:$6.5600
  • 10:$5.8000
  • 30:$5.2100
IXXH80N65B4H1  9448
    Imagen Parte # Descripción
    IXXH80N65B4D1

    Mfr.#: IXXH80N65B4D1

    OMO.#: OMO-IXXH80N65B4D1

    		 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
    IXXH80N65B4H1

    Mfr.#: IXXH80N65B4H1

    OMO.#: OMO-IXXH80N65B4H1

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4

    Mfr.#: IXXH80N65B4

    OMO.#: OMO-IXXH80N65B4

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4D1

    Mfr.#: IXXH80N65B4D1

    OMO.#: OMO-IXXH80N65B4D1-1190

    		 Nuevo y original
    IXXH80N65B4D1/SGL160N60U

    Mfr.#: IXXH80N65B4D1/SGL160N60U

    OMO.#: OMO-IXXH80N65B4D1-SGL160N60U-1190

    		 Nuevo y original
    IXXH80N65B4D1/SGL160N60UFD

    Mfr.#: IXXH80N65B4D1/SGL160N60UFD

    OMO.#: OMO-IXXH80N65B4D1-SGL160N60UFD-1190

    		 Nuevo y original
    IXXH80N65B4H1

    Mfr.#: IXXH80N65B4H1

    OMO.#: OMO-IXXH80N65B4H1-IXYS-CORPORATION

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4

    Mfr.#: IXXH80N65B4

    OMO.#: OMO-IXXH80N65B4-IXYS-CORPORATION

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IXXH80N65B4H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,74 US$
    6,74 US$
    10
    6,40 US$
    64,00 US$
    100
    6,06 US$
    606,29 US$
    500
    5,73 US$
    2 863,00 US$
    1000
    5,39 US$
    5 389,20 US$
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