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IXXH80N65B4H1

IXXH80N65B4H1
Mfr. #:
IXXH80N65B4H1
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXXH80N65B4H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXH80N65B4H1 DatasheetIXXH80N65B4H1 Datasheet (P4-P6)IXXH80N65B4H1 Datasheet (P7)
ECAD Model:
Más información:
IXXH80N65B4H1 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247AD-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
160 A
Pd - Disipación de energía:
625 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
IXXH80N65
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Marca:
IXYS
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Nombre comercial:
XPT
Unidad de peso:
0.158733 oz
Tags
IXXH8, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD
***ark
Transistor, Igbt, 650V, 160A, To-247Ad Rohs Compliant: Yes
***el Electronic
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
***ure Electronics
650V, 80A, TO-247. IGBT W/ DIODE
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Igbt Single Transistor, 60 A, 2.2 V, 455 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 145A I(C), 650V V(BR)CES, N-Channel, TO-247AD
***ure Electronics
IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
***ment14 APAC
IGBT, SINGLE, 650V, 60A, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 650V 118A 455000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 118A 455W TO247AD
***S
new, original packaged
***et
Trans IGBT Chip N-CH 650V 140A 3-Pin TO-247AD Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
***ark
Transistor, Bipolar, N Channel, 650V, To-247Ad
***ineon
Target Applications: AC-DC; Pump; Solar; UPS; Welding
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
IGBT, SINGLE, 650V, 140A, TO-247AC-3
***i-Key Marketplace
IRGP4790 - DISCRETE IGBT WITHOUT
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***nell
IGBT, SINGLE, 650V, 140A, TO-247AC-3; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No.
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2.1V @ 15V 75A 140A 450W 80ns/200ns
***ical
Trans IGBT Chip N-CH 650V 140A 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 650V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 450W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of
***ical
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXXH80N65B4H1
DISTI # 30706002		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		69
  • 1000:$4.7616
  • 500:$5.4720
  • 250:$5.9520
  • 100:$6.5280
  • 50:$6.6048
  • 25:$7.2288
  • 10:$7.9392
  • 3:$8.8128
IXXH80N65B4H1
DISTI # 30292435		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 2:$8.5220
IXXH80N65B4H1
DISTI # IXXH80N65B4H1-ND		IXYS CorporationIGBT 650V 160A 625W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		3446In Stock
  • 1020:$4.9612
  • 510:$5.6963
  • 270:$6.2475
  • 120:$6.7988
  • 30:$7.5337
  • 10:$8.2690
  • 1:$9.1900
IXXH80N65B4H1
DISTI # V99:2348_15876179		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 1000:$4.5570
  • 500:$5.2280
  • 250:$5.7240
  • 100:$6.2660
  • 50:$6.5760
  • 25:$7.0130
  • 10:$7.7040
  • 1:$8.5399
IXXH80N65B4H1
DISTI # 747-IXXH80N65B4H1		IXYS CorporationIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
RoHS: Compliant		533
  • 1:$9.1800
  • 10:$8.2700
  • 25:$7.5300
  • 50:$6.8800
  • 100:$6.8000
  • 250:$6.2000
  • 500:$5.7000
  • 1000:$4.9600
IXXH80N65B4H1
DISTI # 1258049		IXYS CorporationIGBT 80A 650V TO247AD, EA169
  • 60:£5.0900
  • 30:£5.1900
  • 10:£5.4400
  • 5:£5.7300
  • 1:£6.4600
IXXH80N65B4H1
DISTI # IXXH80N65B4H1		IXYS CorporationTransistor: IGBT,GenX4™,650V,80A,625W,TO247-346
  • 1:$7.2900
  • 3:$6.5600
  • 10:$5.8000
  • 30:$5.2100
IXXH80N65B4H1  9448
    Imagen Parte # Descripción
    IKQ75N120CH3XKSA1

    Mfr.#: IKQ75N120CH3XKSA1

    OMO.#: OMO-IKQ75N120CH3XKSA1

    		 IGBT Transistors IGBT PRODUCTS
    IDW75D65D1XKSA1

    Mfr.#: IDW75D65D1XKSA1

    OMO.#: OMO-IDW75D65D1XKSA1

    		 Diodes - General Purpose, Power, Switching IGBT PRODUCTS
    LM317AT/NOPB

    Mfr.#: LM317AT/NOPB

    OMO.#: OMO-LM317AT-NOPB

    		 Linear Voltage Regulators 3-TERMINAL ADJ REG
    IXBH12N300

    Mfr.#: IXBH12N300

    OMO.#: OMO-IXBH12N300

    		 IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
    IXYH30N170C

    Mfr.#: IXYH30N170C

    OMO.#: OMO-IXYH30N170C

    		 IGBT Transistors 1700V/108A High Voltage XPT IGBT
    V481BA60

    Mfr.#: V481BA60

    OMO.#: OMO-V481BA60

    		 Varistors 750V 70kA 5500pF
    V481BA60

    Mfr.#: V481BA60

    OMO.#: OMO-V481BA60-LITTELFUSE

    		 Varistors 750V 70kA 5500pF
    IXBH12N300

    Mfr.#: IXBH12N300

    OMO.#: OMO-IXBH12N300-IXYS-CORPORATION

    		 IGBT 3000V 30A 160W TO247
    LM317AT/NOPB

    Mfr.#: LM317AT/NOPB

    OMO.#: OMO-LM317AT-NOPB-TEXAS-INSTRUMENTS

    		 IC REG LIN POS ADJ 1.5A TO220-3
    IKQ75N120CH3XKSA1

    Mfr.#: IKQ75N120CH3XKSA1

    OMO.#: OMO-IKQ75N120CH3XKSA1-INFINEON-TECHNOLOGIES

    		 IGBT HS SW 1200V 75A TO-247-3
    Disponibilidad
    Valores:
    524
    En orden:
    2507
    Ingrese la cantidad:
    El precio actual de IXXH80N65B4H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    9,18 US$
    9,18 US$
    10
    8,27 US$
    82,70 US$
    25
    7,53 US$
    188,25 US$
    50
    6,88 US$
    344,00 US$
    100
    6,80 US$
    680,00 US$
    250
    6,20 US$
    1 550,00 US$
    500
    5,70 US$
    2 850,00 US$
    1000
    4,96 US$
    4 960,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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