TGF2953

TGF2953
Mfr. #:
TGF2953
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2953 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
TGF2953 más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Gofre
Alias ​​de parte
1112257
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 65 C to + 150 C
Paquete-Estuche
Die
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
18.2 dB
Potencia de salida
41.6 dBm
Disipación de potencia Pd
17 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65
Frecuencia de operación
15 GHz
Id-corriente-de-drenaje-continua
820 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Polaridad del transistor
Canal N
Voltaje de puerta de drenaje máximo
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2953
DISTI # 772-TGF2953
QorvoRF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
RoHS: Compliant
50
  • 50:$43.9000
  • 100:$37.9700
1112257
DISTI # TGF2953
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$25.3000
Imagen Parte # Descripción
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Mfr.#: TGF2942

OMO.#: OMO-TGF2942

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OMO.#: OMO-TGF2954

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Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20

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OMO.#: OMO-TGF2977-SM-318

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
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Mfr.#: TGF2022-12

OMO.#: OMO-TGF2022-12-318

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Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
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Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

Nuevo y original
TGF60-07870787-039

Mfr.#: TGF60-07870787-039

OMO.#: OMO-TGF60-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, GREY
TGF30-07870787-039

Mfr.#: TGF30-07870787-039

OMO.#: OMO-TGF30-07870787-039-LEADER-TECH

Thermal Gap Filler/Sky Blue 3.0W/m-K
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de TGF2953 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
56,96 US$
56,96 US$
10
54,11 US$
541,07 US$
100
51,26 US$
5 125,95 US$
500
48,41 US$
24 205,90 US$
1000
45,56 US$
45 564,00 US$
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