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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPD65R600E6BTMA1 DISTI # IPD65R600E6BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 7.3A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD65R600E6BTMA1 DISTI # IPD65R600E6BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 7.3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD65R600E6BTMA1 DISTI # IPD65R600E6BTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 650V 7.3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD65R600E6ATMA1 DISTI # IPD65R600E6ATMA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 7.3A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPD65R600E6 DISTI # SP000800216 | Infineon Technologies AG | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 2500 |
|
| IPD65R600E6ATMA1 DISTI # IPD65R600E6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R600E6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD65R600E6ATMA1 DISTI # SP001117096 | Infineon Technologies AG | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117096) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD65R600E6 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 35500 |
|
| IPD65R600E6TR | Infineon Technologies AG | RoHS: Not Compliant | 93 |
|
| IPD65R600E6ATMA1 DISTI # 726-IPD65R600E6ATMA1 | Infineon Technologies AG | MOSFET N-Ch 700V 7.3A DPAK-2 | 0 |
|
| IPD65R600E6 DISTI # 726-IPD65R600E6 | Infineon Technologies AG | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS E6 RoHS: Compliant | 3 |
|
| IPD65R600E6BTMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPD65R600E6BTMA1 DISTI # 8235591P | Infineon Technologies AG | MOSFET N-CH 650V 7.3A COOLMOS E6 TO252, RL | 2120 |
|
| IPD65R600E6 | Infineon Technologies AG | INSTOCK | 2166 | |
| IPD65R600E6ATMA1 DISTI # 2443437 | Infineon Technologies AG | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant | 0 |
|
| IPD65R600E6 | Infineon Technologies AG | 650V,7.3A,N channel Power MOSFET | 1700 |
|
| IPD65R600E6ATMA1 DISTI # 2443437 | Infineon Technologies AG | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPD65R950C6 OMO.#: OMO-IPD65R950C6 |
MOSFET N-Ch 700V 4.5A DPAK-2 |
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Mfr.#: IPD65R420CFDATMA2 OMO.#: OMO-IPD65R420CFDATMA2 |
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve |
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Mfr.#: IPD65R950CFDATMA2 OMO.#: OMO-IPD65R950CFDATMA2 |
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve |
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Mfr.#: IPD65R380C6ATMA1 OMO.#: OMO-IPD65R380C6ATMA1 |
MOSFET LOW POWER_LEGACY |
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Mfr.#: IPD65R650CEAUMA1 |
MOSFET N-CH 650V 7A TO-252 |
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Mfr.#: IPD65R950CFDATMA1 |
MOSFET N-CH 650V 3.9A TO-252 |
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Mfr.#: IPD65R250E6. OMO.#: OMO-IPD65R250E6--1190 |
Nuevo y original |
|
Mfr.#: IPD65R380C6 OMO.#: OMO-IPD65R380C6-1190 |
Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1) |
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Mfr.#: IPD65R420CFDA,65F420A |
Nuevo y original |
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Mfr.#: IPD65R250C6XTMA1 |
RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2 |