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IPD65R380C6ATMA1

IPD65R380C6ATMA1
Mfr. #:
IPD65R380C6ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_LEGACY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD65R380C6ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
10.6 A
Rds On - Resistencia de la fuente de drenaje:
340 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
39 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS C6
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
110 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
IPD65R380C6ATMA1 SP001117734
Unidad de peso:
0.139332 oz
Tags
IPD65R380C, IPD65R3, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***enic
500V 13A 240m´Î@10V6.5A 110W 3V@250uA 1.35pF@100V N Channel 710pF@100v 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3 MOSFETs ROHS
*** Electronic Components
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS
***ical
Trans MOSFET N-CH 650V 8.7A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
Single N-Channel 650 V 420 mOhm 31.5 nC CoolMOS™ Power Mosfet - TO-252-3
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ure Electronics
Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ark
MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
***ure Electronics
N-Channel 6000 V 380 mOhm 19 nC CoolMOS™ P6 Power Transistor - DPAK-3
***el Electronic
0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
***ark
Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes
***el Electronic
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
***icroelectronics SCT
Power MOSFETs, 650V, 11A, DPAK, Tape and Reel
***enic
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS
***icroelectronics
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
***et
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R
*** Electronic Components
MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II
***ure Electronics
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
***ow.cn
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
***r Electronics
Power Field-Effect Transistor, 11A I(D), 650V, 0.455ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***el Electronic
IC BUFFER NON-INVERT 6V 14TSSOP
Parte # Mfg. Descripción Valores Precio
IPD65R380C6ATMA1
DISTI # IPD65R380C6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 10.6A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD65R380C6ATMA1
    DISTI # IPD65R380C6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 10.6A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD65R380C6ATMA1
      DISTI # IPD65R380C6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 10.6A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD65R380C6ATMA1
        DISTI # 50Y2040        		Infineon Technologies AGPower MOSFET, N Channel, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V RoHS Compliant: Yes0
          IPD65R380C6ATMA1
          DISTI # 726-IPD65R380C6ATMA1          		Infineon Technologies AGMOSFET LOW POWER_LEGACY
          RoHS: Compliant          		0
            IPD65R380C6ATMA1
            DISTI # 2480835RL            		Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3
            RoHS: Compliant            		0
            • 2500:$1.2400
            • 1000:$1.2600
            • 500:$1.5200
            • 100:$1.7300
            • 10:$2.1700
            • 1:$2.5600
            IPD65R380C6ATMA1
            DISTI # 2480835            		Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3
            RoHS: Compliant            		95
            • 2500:$1.2400
            • 1000:$1.2600
            • 500:$1.5200
            • 100:$1.7300
            • 10:$2.1700
            • 1:$2.5600
            IPD65R380C6ATMA1
            DISTI # 2480835            		Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3
            RoHS: Compliant            		157
            • 500:£0.7710
            • 250:£0.8230
            • 100:£0.8740
            • 10:£1.1400
            • 1:£1.4700
            Imagen Parte # Descripción
            IPD65R380E6ATMA1

            Mfr.#: IPD65R380E6ATMA1

            OMO.#: OMO-IPD65R380E6ATMA1

            		 MOSFET LOW POWER_LEGACY
            IPD65R380C6

            Mfr.#: IPD65R380C6

            OMO.#: OMO-IPD65R380C6

            		 MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6
            IPD65R380C6ATMA1

            Mfr.#: IPD65R380C6ATMA1

            OMO.#: OMO-IPD65R380C6ATMA1

            		 MOSFET LOW POWER_LEGACY
            IPD65R380C6BTMA1

            Mfr.#: IPD65R380C6BTMA1

            OMO.#: OMO-IPD65R380C6BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 10.6A TO252-3
            IPD65R380E6BTMA1

            Mfr.#: IPD65R380E6BTMA1

            OMO.#: OMO-IPD65R380E6BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 10.6A TO252
            IPD65R380C6

            Mfr.#: IPD65R380C6

            OMO.#: OMO-IPD65R380C6-1190

            		 Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1)
            IPD65R380C6ATMA1

            Mfr.#: IPD65R380C6ATMA1

            OMO.#: OMO-IPD65R380C6ATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 10.6A TO252-3
            IPD65R380E6

            Mfr.#: IPD65R380E6

            OMO.#: OMO-IPD65R380E6-1190

            		 Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252
            IPD65R380E6 , 2SD2402-EY

            Mfr.#: IPD65R380E6 , 2SD2402-EY

            OMO.#: OMO-IPD65R380E6-2SD2402-EY-1190

            		 Nuevo y original
            IPD65R380E6ATMA1

            Mfr.#: IPD65R380E6ATMA1

            OMO.#: OMO-IPD65R380E6ATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 10.6A TO252
            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de IPD65R380C6ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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