MRF6V2150NBR1

Mfr. #:: MRF6V2150NBR1
Fabricante:: NXP / Freescale
Descripción:: RF MOSFET Transistors VHV6 150W
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: MRF6V2150NBR1 Ficha de datos
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Más información:: MRF6V2150NBR1 más información

Atributo del producto
Valor de atributo

Fabricante:: NXP

Categoria de producto:: Transistores RF MOSFET

RoHS:: E

Polaridad del transistor:: Canal N

Tecnología:: Si

Vds - Voltaje de ruptura de drenaje-fuente:: 110 V

Ganar:: 25 dB

Potencia de salida:: 150 W

Temperatura mínima de funcionamiento:: - 65 C

Temperatura máxima de funcionamiento:: + 150 C

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-272-4

Embalaje:: Carrete

Configuración:: Single Dual Drain Dual Gate

Altura:: 2.64 mm

Longitud:: 23.67 mm

Frecuencia de operación:: 220 MHz

Serie:: MRF6V2150N

Escribe:: RF Power MOSFET

Ancho:: 9.07 mm

Marca:: NXP / Freescale

Modo de canal:: Mejora

Sensible a la humedad:: Yes

Tipo de producto:: Transistores RF MOSFET

Cantidad de paquete de fábrica:: 500

Subcategoría:: MOSFET

Vgs - Voltaje puerta-fuente:: - 0.5 V, 12 V

Vgs th - Voltaje umbral puerta-fuente:: 1.62 V

Parte # Alias:: 935316841528

Unidad de peso:: 0.067412 oz

Tags: MRF6V2150NBR, MRF6V2150NB, MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

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MRF6V2150NBR1 Puntajes y reseñas

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2019-03-31

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2019-02-24

MRF6V2150NBR1 Descripción

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V2150NBR1 Más información

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
MRF6V2150NBR1 DISTI # 24346163	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	720	2:$63.2500
MRF6V2150NBR1 DISTI # 30289379	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	60	2:$63.2500
MRF6V2150NBR1 DISTI # MRF6V2150NBR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$48.8424
MRF6V2150NBR1 DISTI # C1S233100141647	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R RoHS: Compliant	720	50:$61.2000 25:$61.9000 10:$62.5000 5:$71.8000 1:$87.0000
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R - Tape and Reel (Alt: MRF6V2150NBR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$53.4900 1000:$51.3900 2000:$49.3900 3000:$47.5900 5000:$46.6900
MRF6V2150NBR1 DISTI # 45AC7382	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272,No. of Pins:4Pins,RoHS Compliant: Yes	386	1:$60.9600 10:$57.6900 25:$54.7500 50:$52.9200 100:$48.5600 250:$47.1200 500:$45.6500
MRF6V2150NBR1 DISTI # 47M2187	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes	0	1:$73.4500
MRF6V2150NBR1 DISTI # 841-MRF6V2150NBR1	NXP Semiconductors	RF MOSFET Transistors VHV6 150W RoHS: Compliant	0	500:$47.3800
MRF6V2150NBR5 DISTI # 841-MRF6V2150NBR5	NXP Semiconductors	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET RoHS: Compliant	0
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	2298	1:$63.2100 10:$58.4200 25:$56.7100
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:£49.8000 5:£48.2900 10:£46.7800 50:£41.9500
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:$87.7600 5:$84.8300 10:$80.7900 50:$78.3100

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MRF6V2150NBR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

L***v

K***S

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes