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MRF6V2300NR1

MRF6V2300NR1
Mfr. #:
MRF6V2300NR1
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors VHV6 300W TO270WB4N
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF6V2300NR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MRF6V2300NR1 más información MRF6V2300NR1 Product Details
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
MRF6V2300N
Escribe
RF Power MOSFET
embalaje
Carrete
Unidad de peso
0.058073 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-270 WB EP
Tecnología
Si
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65 C
Vgs-Puerta-Fuente-Voltaje
- 0.5 V 10 V
Vds-Drain-Source-Breakdown-Voltage
110 V
Polaridad del transistor
Canal N
Tags
MRF6V23, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
***et
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
***ical
Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R
***or
RF ULTRA HIGH FREQUENCY BAND, N-
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
*** Semiconductors SCT
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
***nell
RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735
*** Semiconductors SCT
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
Parte # Mfg. Descripción Valores Precio
MRF6V2300NR1
DISTI # MRF6V2300NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Not compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6V2300NR1
    DISTI # MRF6V2300NR1CT-ND    		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      MRF6V2300NR1
      DISTI # MRF6V2300NR1DKR-ND      		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
      RoHS: Not compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        MRF6V2300NR1
        DISTI # 47M2190        		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:300W,Operating Frequency Min:10MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-270 RoHS Compliant: Yes0
        • 1:$138.9300
        • 10:$133.4300
        • 25:$125.5800
        • 100:$81.6300
        • 500:$78.4900
        MRF6V2300NR1
        DISTI # 841-MRF6V2300NR1        		NXP SemiconductorsRF MOSFET Transistors VHV6 300W TO270WB4N
        RoHS: Compliant        		0
          MRF6V2300NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
          RoHS: Compliant          		972
          • 1000:$93.9000
          • 500:$98.8400
          • 100:$102.9000
          • 25:$107.3100
          • 1:$115.5600
          MRF6V2300NR1
          DISTI # MRF6V2300NR1          		NXP SemiconductorsRF POWER TRANSISTOR
          RoHS: Compliant          		0
            Imagen Parte # Descripción
            MRF6V2010GNR1

            Mfr.#: MRF6V2010GNR1

            OMO.#: OMO-MRF6V2010GNR1

            		 RF MOSFET Transistors VHV6 10W TO270-2GN
            MRF6V2150NBR1

            Mfr.#: MRF6V2150NBR1

            OMO.#: OMO-MRF6V2150NBR1

            		 RF MOSFET Transistors VHV6 150W
            MRF6V2300NBR1

            Mfr.#: MRF6V2300NBR1

            OMO.#: OMO-MRF6V2300NBR1

            		 RF MOSFET Transistors VHV6 300W TO272WB4N
            MRF6V2010NBR5

            Mfr.#: MRF6V2010NBR5

            OMO.#: OMO-MRF6V2010NBR5

            		 RF MOSFET Transistors VHV6 10W Latrl N-Ch. Broadband MOSFET
            MRF6V2010GNR5

            Mfr.#: MRF6V2010GNR5

            OMO.#: OMO-MRF6V2010GNR5-NXP-SEMICONDUCTORS

            		 FET RF 110V 220MHZ TO-270G-2
            MRF6V2010NBR1

            Mfr.#: MRF6V2010NBR1

            OMO.#: OMO-MRF6V2010NBR1-NXP-SEMICONDUCTORS

            		 FET RF 110V 220MHZ TO272-2
            MRF6V2010NBR5

            Mfr.#: MRF6V2010NBR5

            OMO.#: OMO-MRF6V2010NBR5-NXP-SEMICONDUCTORS

            		 FET RF 110V 220MHZ TO-272-2
            MRF6V2150NBR

            Mfr.#: MRF6V2150NBR

            OMO.#: OMO-MRF6V2150NBR-1190

            		 Nuevo y original
            MRF6V2010GNR1

            Mfr.#: MRF6V2010GNR1

            OMO.#: OMO-MRF6V2010GNR1-NXP-SEMICONDUCTORS

            		 FET RF 110V 220MHZ TO-270G-2
            MRF6V2150NBR5

            Mfr.#: MRF6V2150NBR5

            OMO.#: OMO-MRF6V2150NBR5-NXP-SEMICONDUCTORS

            		 RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
            Disponibilidad
            Valores:
            Available
            En orden:
            2500
            Ingrese la cantidad:
            El precio actual de MRF6V2300NR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            117,74 US$
            117,74 US$
            10
            111,85 US$
            1 118,48 US$
            100
            105,96 US$
            10 596,15 US$
            500
            100,07 US$
            50 037,40 US$
            1000
            94,19 US$
            94 188,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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