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DMN63D8LDW-7

DMN63D8LDW-7
Mfr. #:
DMN63D8LDW-7
Fabricante:
Diodes Incorporated
Descripción:
Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN63D8LDW-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN63D8LDW-7 DatasheetDMN63D8LDW-7 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Diodos incorporados
categoria de producto
FET: matrices
Serie
DMN63D8
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000212 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-TSSOP, SC-88, SOT-363
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SOT-363
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
300mW
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
22pF @ 25V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
220mA
Rds-On-Max-Id-Vgs
2.8 Ohm @ 250mA, 10V
Vgs-th-Max-Id
1.5V @ 250μA
Puerta-Carga-Qg-Vgs
870nC @ 10V
Disipación de potencia Pd
300 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6.3 ns
Hora de levantarse
3.2 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
260 mA
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.5 V
Resistencia a la fuente de desagüe de Rds
2.8 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
12 ns
Tiempo de retardo de encendido típico
3.3 ns
Qg-Gate-Charge
0.87 nC
Transconductancia directa-Mín.
80 mS
Modo de canal
Mejora
Tags
DMN63D8LDW-7, DMN63D8LD, DMN63D8, DMN63D, DMN63, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 100, Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMN63D8LDW-7
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***ical
Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
***ark
Mosfet Bvdss: 41V~60V Sot363 T&r 3K Rohs Compliant: Yes
***p One Stop Global
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R
***ied Electronics & Automation
Dual N-Ch Enhancement MOSFET SOT-363
***et
MOSFET BVDSS: 41V-60V SOT363 T&R 3K
*** Source Electronics
MOSFET 2N-CH 30V 0.22A SOT363
***ronik
N+N CH MOS+ESD 30V 0,22A SOT363
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET AEC-Q101, CAN-N DOPP. 30V, SOT363; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:260mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:400mW; Modello Case Transistor:SOT-363; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
DMN63D8LDW-7
DISTI # V72:2272_06697530		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		790
  • 500:$0.0919
  • 250:$0.1218
  • 100:$0.1517
  • 25:$0.1816
  • 10:$0.1900
  • 1:$0.2826
DMN63D8LDW-7
DISTI # DMN63D8LDW-7CT-ND		Diodes IncorporatedMOSFET 2N-CH 30V 0.22A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		408917In Stock
  • 1000:$0.0647
  • 500:$0.0952
  • 100:$0.1776
  • 10:$0.3170
  • 1:$0.3500
DMN63D8LDW-7
DISTI # DMN63D8LDW-7DKR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 0.22A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		408917In Stock
  • 1000:$0.0647
  • 500:$0.0952
  • 100:$0.1776
  • 10:$0.3170
  • 1:$0.3500
DMN63D8LDW-7
DISTI # DMN63D8LDW-7TR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 0.22A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		402000In Stock
  • 3000:$0.0567
DMN63D8LDW-7
DISTI # 31062359		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		790
  • 500:$0.1144
  • 250:$0.1370
  • 100:$0.1596
  • 63:$0.1821
DMN63D8LDW-7
DISTI # DMN63D8LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R (Alt: DMN63D8LDW-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 21000
  • 3000:€0.0488
  • 6000:€0.0354
  • 12000:€0.0330
  • 18000:€0.0289
  • 30000:€0.0270
DMN63D8LDW-7
DISTI # DMN63D8LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R (Alt: DMN63D8LDW-7)
RoHS: Compliant
Min Qty: 18000
Container: Tape and Reel		Asia - 0
    DMN63D8LDW-7
    DISTI # DMN63D8LDW-7    		Diodes IncorporatedTrans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R - Cut TR (SOS) (Alt: DMN63D8LDW-7)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 0
    • 1:$0.2089
    • 30:$0.1729
    • 75:$0.1119
    • 150:$0.0769
    • 375:$0.0719
    • 750:$0.0619
    • 1500:$0.0619
    DMN63D8LDW-7
    DISTI # DMN63D8LDW-7    		Diodes IncorporatedTrans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN63D8LDW-7)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.0589
    • 6000:$0.0589
    • 12000:$0.0589
    • 18000:$0.0589
    • 30000:$0.0589
    DMN63D8LDW-7
    DISTI # 70551252    		Diodes IncorporatedDual N-Ch Enhancement MOSFET SOT-363
    RoHS: Compliant    		0
    • 500:$0.0720
    • 1000:$0.0520
    • 1500:$0.0460
    • 3000:$0.0420
    DMN63D8LDW-7Diodes Incorporated 
    RoHS: Compliant    		2999Cut Tape/Mini-Reel
    • 1:$0.0620
    • 100:$0.0450
    • 250:$0.0430
    • 500:$0.0410
    • 1500:$0.0360
    DMN63D8LDW-7Diodes IncorporatedDual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
    RoHS: Compliant    		135000Reel
    • 3000:$0.0326
    • 9000:$0.0298
    • 24000:$0.0283
    DMN63D8LDW-7
    DISTI # 621-DMN63D8LDW-7    		Diodes IncorporatedMOSFET 30V DUAL N-CH MOSFET
    RoHS: Compliant    		0
    • 1:$0.3000
    • 10:$0.2020
    • 100:$0.0840
    • 1000:$0.0580
    • 3000:$0.0450
    DMN63D8LDW-13
    DISTI # 621-DMN63D8LDW-13    		Diodes IncorporatedMOSFET 30V DUAL N-CH MOSFET
    RoHS: Compliant    		0
    • 10000:$0.0390
    DMN63D8LDW-7
    DISTI # 8222598P    		Zetex / Diodes IncDUAL N-CH ENHANCEMENT MOSFET SOT-363, RL12100
    • 500:£0.0590
    • 1000:£0.0430
    • 1500:£0.0370
    • 3000:£0.0340
    DMN63D8LDW-7Diodes Incorporated 2048
      DMN63D8LDW-7Diodes Incorporated 1056
        DMN63D8LDW-7
        DISTI # XSFP00000001360        		Diodes IncorporatedSmallSignalField-EffectTransistor,0.3AI(D),50V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
        RoHS: Compliant        		589547
        • 3000:$0.1180
        • 589547:$0.1073
        DMN63D8LDW-7
        DISTI # XSKDRABS0023562        		DIODES INCORPORATED 
        RoHS: Compliant        		15120
        • 18000:$0.0386
        DMN63D8LDW-7
        DISTI # 2543518        		Diodes IncorporatedMOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363
        RoHS: Compliant        		2698
        • 5:£0.1840
        • 25:£0.1790
        • 100:£0.0683
        • 250:£0.0662
        • 500:£0.0620
        DMN63D8LDW-7
        DISTI # C1S205700306030        		Diodes IncorporatedTrans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
        RoHS: Compliant        		790
        • 250:$0.1218
        • 100:$0.1517
        • 25:$0.1816
        Imagen Parte # Descripción
        DMN63D8LDWQ-7

        Mfr.#: DMN63D8LDWQ-7

        OMO.#: OMO-DMN63D8LDWQ-7

        		 MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
        DMN63D1LT-13

        Mfr.#: DMN63D1LT-13

        OMO.#: OMO-DMN63D1LT-13

        		 MOSFET MOSFETBVDSS: 41V-60V
        DMN63D1LT-7

        Mfr.#: DMN63D1LT-7

        OMO.#: OMO-DMN63D1LT-7

        		 MOSFET MOSFETBVDSS: 41V-60V
        DMN63D1LV-13

        Mfr.#: DMN63D1LV-13

        OMO.#: OMO-DMN63D1LV-13

        		 MOSFET MOSFETBVDSS: 41V-60V
        DMN63D8L-7

        Mfr.#: DMN63D8L-7

        OMO.#: OMO-DMN63D8L-7

        		 MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
        DMN63D1LDW-13

        Mfr.#: DMN63D1LDW-13

        OMO.#: OMO-DMN63D1LDW-13

        		 MOSFET MOSFET BVDSS
        DMN63D1L-7

        Mfr.#: DMN63D1L-7

        OMO.#: OMO-DMN63D1L-7

        		 MOSFET MOSFET BVDSS
        DMN63D8LV-7-CUT TAPE

        Mfr.#: DMN63D8LV-7-CUT TAPE

        OMO.#: OMO-DMN63D8LV-7-CUT-TAPE-1190

        		 Nuevo y original
        DMN63D0LT-7

        Mfr.#: DMN63D0LT-7

        OMO.#: OMO-DMN63D0LT-7-DIODES

        		 MOSFET MOSFET BVDSS: 61V-10 V-100V SOT523 T&R 3K
        DMN63D8LDW-7

        Mfr.#: DMN63D8LDW-7

        OMO.#: OMO-DMN63D8LDW-7-DIODES

        		 Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de DMN63D8LDW-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,04 US$
        0,04 US$
        10
        0,04 US$
        0,36 US$
        100
        0,03 US$
        3,40 US$
        500
        0,03 US$
        16,05 US$
        1000
        0,03 US$
        30,20 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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