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BSM50GD120DN2BOSA1

BSM50GD120DN2BOSA1
Mfr. #:
BSM50GD120DN2BOSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT 2 LOW POWER ECONO2-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM50GD120DN2BOSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSM50GD120DN, BSM50GD120D, BSM50GD12, BSM50GD1, BSM50GD, BSM50G, BSM5, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
***et Europe
Trans IGBT Module N-CH 1.2KV 72A 17-Pin EconoPACK 2A
***et
Trans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge
***Components
IGBT 3ph Full-Bridge 1200V 72A ECONOPACK
***i-Key
IGBT 2 LOW POWER ECONO2-2
***ronik
6-PACK 1200V 72A EconoPACK2
***omponent
Infineon power module
***ark
IGBT MODULE, 1200V, ECONOPACK3; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:3V; Power Dissipation:350W; Case Style:Econopack 3; Termination Type:Solder; Collector-to-Emitter;RoHS Compliant: Yes
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:3V; Power Dissipation:350W; Case Style:Econopack 3; Termination Type:Solder; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:100A; Full Power Rating Temperature:25°C; No. of Transistors:6; Power Dissipation Pd:350W; Voltage, Vce Sat Typ:2.5V
***ment14 APAC
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
Parte # Mfg. Descripción Valores Precio
BSM50GD120DN2BOSA1
DISTI # BSM50GD120DN2BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$128.0000
BSM50GD120DN2BOSA1
DISTI # BSM50GD120DN2BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge - Trays (Alt: BSM50GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
    BSM50GD120DN2BOSA1
    DISTI # 61M5056    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3,Transistor Polarity:N Channel,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:350W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:17Pins RoHS Compliant: Yes0
    • 25:$128.3600
    • 10:$131.1100
    • 5:$137.5200
    • 1:$140.2800
    BSM50GD120DN2
    DISTI # 641-BSM50GD120DN2    		Infineon Technologies AGIGBT Modules 1200V 50A FL BRIDGE
    RoHS: Compliant    		0
    • 1:$138.8900
    • 5:$136.1600
    • 10:$129.8100
    • 25:$127.0900
    BSM50GD120DN2BOSA1
    DISTI # 1496949    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant    		0
    • 25:$191.5200
    • 10:$195.6200
    • 5:$205.1900
    • 1:$209.3100
    BSM50GD120DN2BOSA1
    DISTI # 1496949    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK354
    • 10:£93.9600
    • 5:£106.0000
    • 1:£108.0000
    Imagen Parte # Descripción
    BSM50GD120DN2E3226

    Mfr.#: BSM50GD120DN2E3226

    OMO.#: OMO-BSM50GD120DN2E3226

    		 IGBT Modules N-CH 1.2KV 50A
    BSM50GD120DN2G

    Mfr.#: BSM50GD120DN2G

    OMO.#: OMO-BSM50GD120DN2G

    		 IGBT Modules 1200V 50A 3-PHASE
    BSM50GD120DN2-E3256

    Mfr.#: BSM50GD120DN2-E3256

    OMO.#: OMO-BSM50GD120DN2-E3256-1190

    		 Nuevo y original
    BSM50GD120DN2E

    Mfr.#: BSM50GD120DN2E

    OMO.#: OMO-BSM50GD120DN2E-1190

    		 Nuevo y original
    BSM50GD120DN2E3224

    Mfr.#: BSM50GD120DN2E3224

    OMO.#: OMO-BSM50GD120DN2E3224-1190

    		 Nuevo y original
    BSM50GD120DLCBOSA1

    Mfr.#: BSM50GD120DLCBOSA1

    OMO.#: OMO-BSM50GD120DLCBOSA1-INFINEON-TECHNOLOGIES

    		 Trans IGBT Module N-CH
    BSM50GD120DN2BOSA1

    Mfr.#: BSM50GD120DN2BOSA1

    OMO.#: OMO-BSM50GD120DN2BOSA1-INFINEON-TECHNOLOGIES

    		 IGBT 2 LOW POWER ECONO2-2
    BSM50GD120DN2E3226BOSA1

    Mfr.#: BSM50GD120DN2E3226BOSA1

    OMO.#: OMO-BSM50GD120DN2E3226BOSA1-INFINEON-TECHNOLOGIES

    		 IGBT 2 LOW POWER ECONO2-2
    BSM50GD120DN2E3226

    Mfr.#: BSM50GD120DN2E3226

    OMO.#: OMO-BSM50GD120DN2E3226-125

    		 IGBT Modules N-CH 1.2KV 50A
    BSM50GD120DN2

    Mfr.#: BSM50GD120DN2

    OMO.#: OMO-BSM50GD120DN2-125

    		 IGBT Modules 1200V 50A FL BRIDGE
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de BSM50GD120DN2BOSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    172,94 US$
    172,94 US$
    10
    164,29 US$
    1 642,88 US$
    100
    155,64 US$
    15 564,15 US$
    500
    146,99 US$
    73 497,40 US$
    1000
    138,35 US$
    138 348,00 US$
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