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PSMN1R8-30BL,118

PSMN1R8-30BL,118
Mfr. #:
PSMN1R8-30BL,118
Fabricante:
Nexperia
Descripción:
RF Bipolar Transistors MOSFET Std N-chanMOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN1R8-30BL,118 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PSMN1R8-30BL,118 más información
Atributo del producto
Valor de atributo
Tags
PSMN1R8-3, PSMN1R8, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R8-30BL - N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
***et
Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N CH 30V 100A D2PAK
***ark
Mosfet, N Channel, 30V, 100A, D2Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.00155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:270W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 100A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00155ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:270W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Parte # Mfg. Descripción Valores Precio
PSMN1R8-30BL,118
DISTI # 1727-7112-1-ND		NexperiaMOSFET N-CH 30V 100A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		17In Stock
  • 100:$1.8583
  • 10:$2.3130
  • 1:$2.5600
PSMN1R8-30BL,118
DISTI # 1727-7112-6-ND		NexperiaMOSFET N-CH 30V 100A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		17In Stock
  • 100:$1.8583
  • 10:$2.3130
  • 1:$2.5600
PSMN1R8-30BL,118
DISTI # 1727-7112-2-ND		NexperiaMOSFET N-CH 30V 100A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.2670
PSMN1R8-30BL,118
DISTI # PSMN1R8-30BL,118		NexperiaTrans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R8-30BL,118)
RoHS: Compliant
Min Qty: 4800
Container: Reel		Americas - 0
  • 4800:$0.9589
  • 6400:$0.9459
  • 11200:$0.9219
  • 24000:$0.8999
  • 48000:$0.8779
PSMN1R8-30BL118NXP SemiconductorsNow Nexperia PSMN1R8-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		100
  • 1000:$0.9600
  • 500:$1.0100
  • 100:$1.0500
  • 25:$1.1000
  • 1:$1.1800
PSMN1R8-30BL,118
DISTI # 771-PSMN1R8-30BL,118		NexperiaMOSFET Std N-chanMOSFET
RoHS: Compliant		500
  • 1:$2.1500
  • 10:$1.8300
  • 100:$1.4600
  • 500:$1.2800
  • 800:$1.0600
  • 2400:$0.9850
  • 4800:$0.9480
PSMN1R8-30BL,118
DISTI # 2114718		NexperiaMOSFET, N-CH, 30V, 100A, D2PAK
RoHS: Compliant		0
  • 5:£1.5000
  • 25:£1.3900
  • 100:£1.1000
  • 250:£0.9510
  • 500:£0.8020
Imagen Parte # Descripción
PSMN1R8-40YLC,115

Mfr.#: PSMN1R8-40YLC,115

OMO.#: OMO-PSMN1R8-40YLC-115

 MOSFET N-channel 40V MOSFET
PSMN1R8-30PL,127

Mfr.#: PSMN1R8-30PL,127

OMO.#: OMO-PSMN1R8-30PL-127

 MOSFET N-CHAN 30V 100A
PSMN1R8-30BL,118

Mfr.#: PSMN1R8-30BL,118

OMO.#: OMO-PSMN1R8-30BL-118

 MOSFET Std N-chanMOSFET
PSMN1R8-30PL,127

Mfr.#: PSMN1R8-30PL,127

OMO.#: OMO-PSMN1R8-30PL-127-NEXPERIA

 MOSFET N-CH 30V TO220AB
PSMN1R8-30PL/BL

Mfr.#: PSMN1R8-30PL/BL

OMO.#: OMO-PSMN1R8-30PL-BL-1190

 Nuevo y original
PSMN1R8-30PL127

Mfr.#: PSMN1R8-30PL127

OMO.#: OMO-PSMN1R8-30PL127-1190

 Now Nexperia PSMN1R8-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN1R8-40YLC

Mfr.#: PSMN1R8-40YLC

OMO.#: OMO-PSMN1R8-40YLC-1190

 Nuevo y original
PSMN1R8-40YLC,115

Mfr.#: PSMN1R8-40YLC,115

OMO.#: OMO-PSMN1R8-40YLC-115-NEXPERIA

 MOSFET N-CH 40V 100A LFPAK
PSMN1R8-40YLC115

Mfr.#: PSMN1R8-40YLC115

OMO.#: OMO-PSMN1R8-40YLC115-1190

 Nuevo y original
PSMN1R8-30BL118

Mfr.#: PSMN1R8-30BL118

OMO.#: OMO-PSMN1R8-30BL118-1190

 Now Nexperia PSMN1R8-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de PSMN1R8-30BL,118 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,32 US$
1,32 US$
10
1,25 US$
12,51 US$
100
1,19 US$
118,52 US$
500
1,12 US$
559,65 US$
1000
1,05 US$
1 053,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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