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IRLU8256PBF

IRLU8256PBF
Mfr. #:
IRLU8256PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRLU8256PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8256PBF DatasheetIRLU8256PBF Datasheet (P4-P6)IRLU8256PBF Datasheet (P7-P9)IRLU8256PBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
81 A
Rds On - Resistencia de la fuente de drenaje:
8.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
10 nC
Pd - Disipación de energía:
63 W
Configuración:
Único
Embalaje:
Tubo
Altura:
6.22 mm
Longitud:
6.73 mm
Tipo de transistor:
1 N-Channel
Ancho:
2.38 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Parte # Alias:
SP001568656
Unidad de peso:
0.139332 oz
Tags
IRLU82, IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Parte # Mfg. Descripción Valores Precio
IRLU8256PBF
DISTI # IRLU8256PBF-ND		Infineon Technologies AGMOSFET N-CH 25V 81A IPAK
RoHS: Compliant
Min Qty: 1200
Container: Tube		Limited Supply - Call
    IRLU8256PBF
    DISTI # 70019898    		Infineon Technologies AGMOSFET,25V,81A,5.7 MOHM,10 NC QG,LOGIC LEVEL,I-PAK
    RoHS: Compliant    		0
    • 1200:$1.0700
    • 2400:$1.0490
    • 6000:$1.0170
    • 12000:$0.9740
    • 30000:$0.9100
    IRLU8256PBF
    DISTI # 942-IRLU8256PBF    		Infineon Technologies AGMOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
    RoHS: Compliant    		0
      IRLU8256PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 4125
        IRLU8256PBF
        DISTI # 1698315        		Infineon Technologies AGMOSFET, N-CH 25V 81A IPAK
        RoHS: Compliant        		0
        • 1:$1.6700
        • 10:$0.8480
        • 100:$0.7130
        • 500:$0.6740
        • 1000:$0.6590
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        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de IRLU8256PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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