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IRLU8113PBF

IRLU8113PBF
Mfr. #:
IRLU8113PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRLU8113PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8113PBF DatasheetIRLU8113PBF Datasheet (P4-P6)IRLU8113PBF Datasheet (P7-P9)IRLU8113PBF Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
94 A
Rds On - Resistencia de la fuente de drenaje:
7.4 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
22 nC
Pd - Disipación de energía:
89 W
Configuración:
Único
Embalaje:
Tubo
Altura:
6.22 mm
Longitud:
6.73 mm
Tipo de transistor:
1 N-Channel
Ancho:
2.38 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Parte # Alias:
SP001552924
Unidad de peso:
0.139332 oz
Tags
IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; SMD Marking:89; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:15ns; Turn On Time:9.2ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
***ter Electronics
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***et
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRLU8113PBF
DISTI # IRLU8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 94A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU8113PBF
    DISTI # 70017972    		Infineon Technologies AGMOSFET,N Ch.,30V,94A,6 MOHM,22 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5600
    IRLU8113PBFInternational Rectifier 
    RoHS: Compliant    		1198
      IRLU8113PBF
      DISTI # 1436999      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1000:$2.1100
      • 500:$2.2600
      • 250:$2.5500
      • 100:$2.8600
      • 10:$3.5300
      • 1:$4.2900
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      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de IRLU8113PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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