SIHF16N50C-E3

SIHF16N50C-E3
Mfr. #:
SIHF16N50C-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET N-Channel 500V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF16N50C-E3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SIHF16N50C-E3 DatasheetSIHF16N50C-E3 Datasheet (P4-P6)SIHF16N50C-E3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHF16N50C-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
15 A
Rds On - Resistencia de la fuente de drenaje:
280 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
48 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
34 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
15.49 mm
Longitud:
10.41 mm
Ancho:
4.7 mm
Marca:
Vishay / Siliconix
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
48 ns
Tiempo típico de retardo de encendido:
18 ns
Unidad de peso:
0.211644 oz
Tags
SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220 Full-Pak
***i-Key
MOSFET N-CH 500V 16A TO220
*** Europe
N-CH SINGLE 500V TO220FP
***ment14 APAC
MOSFET,N CH,DIODE,500V,16A,TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:16A; Power Dissipation Pd:38W; Voltage Vgs Max:30V
***
N-CHANNEL 500V
SiHx16N50C 500-V N-Channel Power MOSFETs
Vishay Siliconix SiHx16N50C 500-V, 16-A N-channel power MOSFETS feature ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84 Ω-nC. Vishay Siliconix SiHx16N50C N-channel power MOSFETs are produced using Vishay Planar Cell technology that has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses than previous-generation MOSFETs.Learn More
Parte # Mfg. Descripción Valores Precio
SIHF16N50C-E3
DISTI # SIHF16N50C-E3-ND
Vishay SiliconixMOSFET N-CH 500V 16A TO-220
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$3.2480
SIHF16N50C-E3
DISTI # SIHF16N50C-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF16N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.8900
  • 6000:$2.9900
  • 4000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
SIHF16N50C-E3
DISTI # 781-SIHF16N50C-E3
Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant
0
  • 1000:$3.3000
Imagen Parte # Descripción
SIHF16N50C-E3

Mfr.#: SIHF16N50C-E3

OMO.#: OMO-SIHF16N50C-E3

MOSFET N-Channel 500V
SIHF16N50C-E3

Mfr.#: SIHF16N50C-E3

OMO.#: OMO-SIHF16N50C-E3-VISHAY

IGBT Transistors MOSFET N-Channel 500V
SIHF16N50C

Mfr.#: SIHF16N50C

OMO.#: OMO-SIHF16N50C-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de SIHF16N50C-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1000
3,24 US$
3 240,00 US$
3000
3,08 US$
9 240,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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