SIHF10N40D-E3 vs SIHF10N40D vs SIHF122N50C-E3

 
PartNumberSIHF10N40D-E3SIHF10N40DSIHF122N50C-E3
DescriptionMOSFET 400V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage400 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance600 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation33 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.9 mm--
Length10.5 mm--
SeriesD--
Width4.69 mm--
BrandVishay / Siliconix--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.211644 oz--
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