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APT30GT60BRG

APT30GT60BRG
Mfr. #:
APT30GT60BRG
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT30GT60BRG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GT60BRG DatasheetAPT30GT60BRG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
64 A
Pd - Disipación de energía:
250 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
64 A
Altura:
5.31 mm
Longitud:
21.46 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
16.26 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
64 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Nombre comercial:
Thunderbolt IGBT
Unidad de peso:
1.340411 oz
Tags
APT30GT60B, APT30GT, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC
***icontronic
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ineon
Target Applications: Pump; Solar; UPS; Welding
*** Electronic Components
IGBT Transistors 600V UltraFast 8-60kHz
***i-Key Marketplace
IRG4PC50 - DISCRETE IGBT WITH AN
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50UD; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 80A 345000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
Parte # Mfg. Descripción Valores Precio
APT30GT60BRG
DISTI # APT30GT60BRG-ND		Microsemi CorporationIGBT 600V 64A 250W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube		Temporarily Out of Stock
  • 90:$7.0258
APT30GT60BRG
DISTI # 494-APT30GT60BRG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		64
  • 1:$8.0000
  • 10:$7.2000
  • 25:$6.5600
  • 100:$5.9200
  • 250:$5.4000
  • 500:$4.9300
  • 1000:$4.3000
APT30GT60BRG
DISTI # APT30GT60BRG		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 79:$4.2800
  • 100:$4.1700
  • 500:$4.1200
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Disponibilidad
Valores:
58
En orden:
2041
Ingrese la cantidad:
El precio actual de APT30GT60BRG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,00 US$
8,00 US$
10
7,20 US$
72,00 US$
25
6,56 US$
164,00 US$
100
5,92 US$
592,00 US$
250
5,40 US$
1 350,00 US$
500
4,93 US$
2 465,00 US$
1000
4,30 US$
4 300,00 US$
2500
3,95 US$
9 875,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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