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IPB042N10N3GE818XT

IPB042N10N3GE818XT
Mfr. #:
IPB042N10N3GE818XT
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB042N10N3GE818XT Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IPB042N10N3GE818XT más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPB042N10
embalaje
Carrete
Alias ​​de parte
IPB042N10N3GE8187ATMA1 SP000939332
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
214 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
14 ns
Hora de levantarse
59 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
4.2 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
48 ns
Qg-Gate-Charge
88 nC
Tags
IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 100A TO263-3
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
Imagen Parte # Descripción
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G E8187

Mfr.#: IPB042N10N3 G E8187

OMO.#: OMO-IPB042N10N3-G-E8187

 MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

 Nuevo y original
IPB042N10N

Mfr.#: IPB042N10N

OMO.#: OMO-IPB042N10N-1190

 Nuevo y original
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

 Nuevo y original
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G-1190

 Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
IPB042N10N3G

Mfr.#: IPB042N10N3G

OMO.#: OMO-IPB042N10N3G-1190

 100V,100A,N Channel Power MOSFET
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

 Nuevo y original
IPB042N10N3GS

Mfr.#: IPB042N10N3GS

OMO.#: OMO-IPB042N10N3GS-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IPB042N10N3GE818XT es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,84 US$
1,84 US$
10
1,75 US$
17,53 US$
100
1,66 US$
166,05 US$
500
1,57 US$
784,15 US$
1000
1,48 US$
1 476,00 US$
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