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IPB042N10N3 G

IPB042N10N3 G
Mfr. #:
IPB042N10N3 G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB042N10N3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB042N10N3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
IPB042N10N3GATMA1 IPB042N10N3GXT SP000446880
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
214 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
14 ns
Hora de levantarse
59 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
4.2 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
48 ns
Tiempo de retardo de encendido típico
27 ns
Modo de canal
Mejora
Tags
IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB042N10N3GATMA1
DISTI # V72:2272_06378065		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		64
  • 25:$2.0861
  • 10:$2.3179
  • 1:$2.9888
IPB042N10N3GE8187ATMA1
DISTI # V36:1790_06378068		Infineon Technologies AGTrans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R0
  • 1000000:$1.1490
  • 500000:$1.1510
  • 100000:$1.2560
  • 10000:$1.4180
  • 1000:$1.4440
IPB042N10N3GATMA1
DISTI # V36:1790_06378065		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.0370
  • 500000:$1.0390
  • 100000:$1.1100
  • 10000:$1.2140
  • 1000:$1.2300
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2929In Stock
  • 500:$1.7743
  • 100:$2.1596
  • 10:$2.6870
  • 1:$2.9900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2929In Stock
  • 500:$1.7743
  • 100:$2.1596
  • 10:$2.6870
  • 1:$2.9900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 5000:$1.2797
  • 2000:$1.3289
  • 1000:$1.4273
IPB042N10N3GE8187ATMA1
DISTI # IPB042N10N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.4438
IPB042N10N3 G
DISTI # 30579993		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
RoHS: Compliant		1000
  • 6:$4.4125
IPB042N10N3GATMA1
DISTI # 31438812		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.8271
IPB042N10N3GATMA1
DISTI # 33368863		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.8125
IPB042N10N3 G
DISTI # 30579618		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
RoHS: Compliant		816
  • 12:$2.2625
IPB042N10N3GATMA1
DISTI # 31010737		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		64
  • 7:$2.9888
IPB042N10N3 G
DISTI # IPB042N10N3 G		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: IPB042N10N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 5000
  • 50000:$0.8333
  • 25000:$0.8456
  • 10000:$0.8582
  • 5000:$0.8712
  • 3000:$0.8984
  • 2000:$0.9274
  • 1000:$0.9583
IPB042N10N3GATMA1
DISTI # SP000446880		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: SP000446880)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 2706
  • 10000:€0.7329
  • 6000:€0.7849
  • 4000:€0.8459
  • 2000:€0.9159
  • 1000:€1.0989
IPB042N10N3GXT
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.9049
  • 6000:$0.9209
  • 4000:$0.9529
  • 2000:$0.9889
  • 1000:$1.0259
IPB042N10N3GE8187ATMA1
DISTI # IPB042N10N3GE8187ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB042N10N3GE8187ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
IPB042N10N3GE8187ATMA1
DISTI # SP000939332		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: SP000939332)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.1900
  • 4000:€1.2900
  • 6000:€1.2900
  • 2000:€1.3900
  • 1000:€1.7900
IPB042N10N3GATMA1
DISTI # 47Y8047		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
  • 500:$1.6600
  • 250:$1.7700
  • 100:$1.8900
  • 50:$2.0500
  • 25:$2.2100
  • 10:$2.3600
  • 1:$2.7800
IPB042N10N3 G
DISTI # 726-IPB042N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		22
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
  • 2000:$1.2600
  • 5000:$1.2100
IPB042N10N3GATMA1
DISTI # 726-IPB042N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		3682
  • 1:$2.6200
  • 10:$2.2200
  • 100:$1.7800
  • 500:$1.5500
  • 1000:$1.2900
  • 2000:$1.2000
  • 5000:$1.1500
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
IPB042N10N3 G E8187
DISTI # 726-IPB042N10N3GE8		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
IPB042N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.2900
IPB042N10N3GATMA1
DISTI # 8275237		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, PK330
  • 500:£1.0190
  • 250:£1.1740
  • 50:£1.3150
  • 10:£1.5590
IPB042N10N3GATMA1
DISTI # 8275237P		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, RL930
  • 500:£1.0190
  • 250:£1.1740
  • 50:£1.3150
IPB042N10N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0042OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB92
  • 63:$3.7185
  • 18:$4.0200
  • 1:$6.0300
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-35
  • 1000:$1.0496
  • 100:$1.1262
  • 10:$1.2951
  • 3:$1.6104
  • 1:$1.8779
IPB042N10N3 G
DISTI # TMOSP9680		Infineon Technologies AGN-CH 100V 100A4mOhm TO263-3
RoHS: Compliant		Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$1.2400
  • 2000:$1.1700
  • 3000:$1.1008
  • 4000:$0.9943
  • 6000:$0.9587
IPB042N10N3 G
DISTI # TMOS2121		Infineon Technologies AGN-CH 100V 137A 4,2mOhm D2PAK
RoHS: Compliant		Stock DE - 100Stock HK - 0Stock US - 0
  • 1:$1.2400
  • 3:$1.1700
  • 11:$1.1008
  • 38:$0.9943
  • 127:$0.9587
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3865
  • 500:£1.2700
  • 250:£1.3600
  • 100:£1.4500
  • 10:£1.8200
  • 1:£2.4200
IPB042N10N3 GInfineon Technologies AGRoHS(ship within 1day)115
  • 1:$3.9600
  • 10:$2.9700
  • 50:$2.6200
  • 100:$2.2400
  • 500:$2.0800
  • 1000:$2.0100
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant		865
  • 10000:$1.7600
  • 5000:$1.8200
  • 2000:$1.9000
  • 1000:$2.0500
  • 500:$2.4700
  • 100:$2.8200
  • 10:$3.5300
  • 1:$4.1400
IPB042N10N3GInfineon Technologies AG100V,100A,N Channel Power MOSFET247
  • 1:$1.8900
  • 100:$1.5800
  • 500:$1.3900
  • 1000:$1.3500
IPB042N10N3GATMA1
DISTI # XSFP00000153641		Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nCOptiMOSPowerMosfet - D2PAK
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$1.7200
  • 1000:$1.8400
Imagen Parte # Descripción
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N03L G

Mfr.#: IPB042N03L G

OMO.#: OMO-IPB042N03L-G

 MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3
IPB042N03LG

Mfr.#: IPB042N03LG

OMO.#: OMO-IPB042N03LG-1190

 Nuevo y original
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

 Nuevo y original
IPB042N10N

Mfr.#: IPB042N10N

OMO.#: OMO-IPB042N10N-1190

 Nuevo y original
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

 Nuevo y original
IPB042N10N3G , 2SD1898-H

Mfr.#: IPB042N10N3G , 2SD1898-H

OMO.#: OMO-IPB042N10N3G-2SD1898-H-1190

 Nuevo y original
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT-317

 RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IPB042N10N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,25 US$
1,25 US$
10
1,19 US$
11,88 US$
100
1,12 US$
112,50 US$
500
1,06 US$
531,25 US$
1000
1,00 US$
1 000,00 US$
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