SIHP12N60E-GE3

SIHP12N60E-GE3
Mfr. #:
SIHP12N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP12N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP12N60E-GE3 DatasheetSIHP12N60E-GE3 Datasheet (P4-P6)SIHP12N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHP12N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220AB-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
29 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
147 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.211644 oz
Tags
SIHP12N60, SIHP12N6, SIHP12N, SIHP12, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 600 V 147 W 0.38 O 58 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB
*** Electronics
VISHAY SIHP12N60E-GE3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
***nell
MOSFET, N-CH, 600V, 12A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:147W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHP12N60E-GE3
DISTI # V99:2348_09218730
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
900
  • 100:$1.5392
  • 10:$1.9002
  • 1:$2.2057
SIHP12N60E-GE3
DISTI # SIHP12N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$1.3877
  • 500:$1.6748
  • 100:$2.1533
  • 50:$2.3926
  • 1:$2.9700
SIHP12N60E-GE3
DISTI # 28994886
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
900
  • 100:$1.5427
  • 10:$1.9067
  • 6:$2.2155
SIHP12N60E-GE3
DISTI # SIHP12N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.1900
  • 2000:$1.1900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
SIHP12N60E-GE3
DISTI # 68W7059
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Product that comes on tape, but is not reeled (Alt: 68W7059)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$2.7100
  • 10:$2.2500
  • 25:$2.0800
  • 50:$1.9100
  • 100:$1.7400
SIHP12N60E-GE3
DISTI # 68W7059
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,MSL:- RoHS Compliant: Yes0
  • 1:$2.7100
  • 10:$2.2500
  • 25:$2.0800
  • 50:$1.9100
  • 100:$1.7400
SIHP12N60E-GE3
DISTI # 62W0519
Vishay IntertechnologiesPower MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V RoHS Compliant: Yes15930
  • 1:$2.7100
  • 10:$2.2500
  • 25:$2.0800
  • 50:$1.9100
  • 100:$1.7400
SIHP12N60E-E3
DISTI # 781-SIHP12N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
2842
  • 1:$2.7100
  • 10:$2.2500
  • 100:$1.7400
  • 500:$1.5300
  • 1000:$1.2700
SIHP12N60E-GE3
DISTI # 78-SIHP12N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
1215
  • 1:$2.7100
  • 10:$2.2500
  • 100:$1.7400
SIHP12N60E-GE3
DISTI # 7879428P
Vishay IntertechnologiesMOSFET N-CH 600V 12A LOW FOM TO220AB, RL960
  • 50:£1.6360
  • 250:£1.5160
  • 1000:£1.2220
  • 5000:£1.1380
SIHP12N60E-GE3
DISTI # 7879428
Vishay IntertechnologiesMOSFET N-CH 600V 12A LOW FOM TO220AB, PK30
  • 5:£2.1000
  • 50:£1.6360
  • 250:£1.5160
  • 1000:£1.2220
  • 5000:£1.1380
SIHP12N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
Americas -
    SIHP12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    Americas -
      SIHP12N60E-GE3
      DISTI # 2283637
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO220AB
      RoHS: Compliant
      17711
      • 1:$4.2900
      • 10:$3.5600
      • 100:$2.7600
      SIHP12N60E-GE3
      DISTI # C1S803601752590
      Vishay IntertechnologiesMOSFETs900
      • 100:$1.5427
      • 10:$1.9067
      • 1:$2.2155
      SIHP12N60E-GE3
      DISTI # 2283637
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO220AB
      RoHS: Compliant
      15932
      • 1:£2.1400
      • 10:£1.6700
      • 100:£1.3600
      • 250:£1.3500
      • 500:£1.3400
      Imagen Parte # Descripción
      MCP4706A2T-E/CH

      Mfr.#: MCP4706A2T-E/CH

      OMO.#: OMO-MCP4706A2T-E-CH

      Digital to Analog Converters - DAC Sngl 8B NV DAC w/Ext Vref & I2C interface
      ST3232BDR

      Mfr.#: ST3232BDR

      OMO.#: OMO-ST3232BDR

      Buffers & Line Drivers Lo Power 2Drvr/2Rcvr
      STTH2003CT

      Mfr.#: STTH2003CT

      OMO.#: OMO-STTH2003CT

      Rectifiers 2X10 Amp 300 Volt
      FDD120AN15A0-F085

      Mfr.#: FDD120AN15A0-F085

      OMO.#: OMO-FDD120AN15A0-F085

      MOSFET 14A 150V MOSFET
      PIC16F18326-I/P

      Mfr.#: PIC16F18326-I/P

      OMO.#: OMO-PIC16F18326-I-P

      8-bit Microcontrollers - MCU 256B EEPROM 10b ADC 5b DAC SPI/I2C
      ATMEGA16U2-AU

      Mfr.#: ATMEGA16U2-AU

      OMO.#: OMO-ATMEGA16U2-AU

      8-bit Microcontrollers - MCU AVR USB 8K FLASH AVR,USB16K FLASH
      STM32F100C4T6B

      Mfr.#: STM32F100C4T6B

      OMO.#: OMO-STM32F100C4T6B

      ARM Microcontrollers - MCU 32BIT CORTEX M3 48PINS 16KB
      STFH18N60M2

      Mfr.#: STFH18N60M2

      OMO.#: OMO-STFH18N60M2

      MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
      STM32F100C4T6B

      Mfr.#: STM32F100C4T6B

      OMO.#: OMO-STM32F100C4T6B-STMICROELECTRONICS

      IC MCU 32BIT 16KB FLASH 48LQFP
      ST3232BDR

      Mfr.#: ST3232BDR

      OMO.#: OMO-ST3232BDR-STMICROELECTRONICS

      IC DRVR/RCVR RS232 LP 16-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de SIHP12N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,70 US$
      2,70 US$
      10
      2,24 US$
      22,40 US$
      100
      1,74 US$
      174,00 US$
      500
      1,52 US$
      760,00 US$
      1000
      1,26 US$
      1 260,00 US$
      2500
      1,17 US$
      2 925,00 US$
      5000
      1,13 US$
      5 650,00 US$
      10000
      1,08 US$
      10 800,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      • -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Compare SIHP12N60E-GE3
        SIHP12N60E vs SIHP12N60EE3 vs SIHP12N60EGE3
      • Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      Top