SIHW30N60E-GE3

SIHW30N60E-GE3
Mfr. #:
SIHW30N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHW30N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHW30N60E-GE3 DatasheetSIHW30N60E-GE3 Datasheet (P4-P6)SIHW30N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHW30N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
125 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.8 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
85 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
250 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
A granel
Altura:
20.82 mm
Longitud:
15.87 mm
Serie:
E
Ancho:
5.31 mm
Marca:
Vishay / Siliconix
Otoño:
36 ns
Tipo de producto:
MOSFET
Hora de levantarse:
32 ns
Cantidad de paquete de fábrica:
480
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
63 ns
Tiempo típico de retardo de encendido:
19 ns
Unidad de peso:
1.340411 oz
Tags
SIHW3, SIHW, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AD
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247AD
***nell
MOSFET, N CH, 600V, 29A, TO-247AD-3
***i-Key
MOSFET N-CH 600V 29A TO-247AD
***
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 29A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube
161In Stock
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin TO-247AD - Tape and Reel (Alt: SIHW30N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
    SIHW30N60E-GE3
    DISTI # 68W7076
    Vishay IntertechnologiesMOSFET, N CH, 600V, 29A, TO-247AD-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
      SIHW30N60E-GE3
      DISTI # 78-SIHW30N60E-GE3
      Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
      RoHS: Compliant
      480
      • 1:$6.4400
      • 10:$5.3300
      • 100:$4.3900
      • 250:$4.2500
      • 500:$3.8100
      • 1000:$3.2100
      • 2500:$3.0500
      SIHW30N60E-GE3Vishay Intertechnologies 500
        SIHW30N60E-GE3Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        RoHS: Compliant
        Americas -
          Imagen Parte # Descripción
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3

          MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A TO-247AD
          Disponibilidad
          Valores:
          480
          En orden:
          2463
          Ingrese la cantidad:
          El precio actual de SIHW30N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          6,44 US$
          6,44 US$
          10
          5,33 US$
          53,30 US$
          100
          4,39 US$
          439,00 US$
          250
          4,25 US$
          1 062,50 US$
          500
          3,81 US$
          1 905,00 US$
          1000
          3,21 US$
          3 210,00 US$
          2500
          3,05 US$
          7 625,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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