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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FS75R12KT4B11BOSA1 DISTI # FS75R12KT4B11BOSA1-ND | Infineon Technologies AG | MOD IGBT LOW PWR ECONO2-6 RoHS: Compliant Min Qty: 10 Container: Tray | Temporarily Out of Stock |
|
| FS75R12KT4B11BOSA1 DISTI # FS75R12KT4B11BOSA1 | Infineon Technologies AG | LOW POWER ECONO - Trays (Alt: FS75R12KT4B11BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FS75R12KT4B11BOSA1 DISTI # 34AC1545 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A,Transistor Polarity:N Channel,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:385W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes | 8 |
|
| FS75R12KT4B11BOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS: Compliant | 20 |
|
| FS75R12KT4_B11 DISTI # 641-FS75R12KT4_B11 | Infineon Technologies AG | IGBT Modules IGBT 1200V 75A | 4 |
|
| FS75R12KT4_B11 | Infineon Technologies AG | 9 | ||
| FS75R12KT4B11BOSA1 DISTI # 2781265 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A RoHS: Compliant | 9 |
|
| FS75R12KT4B11BOSA1 DISTI # 2781265 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A RoHS: Compliant | 8 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: TN0110N3-G OMO.#: OMO-TN0110N3-G |
MOSFET 100V 3Ohm |
|
Mfr.#: 381LX821M400A062 OMO.#: OMO-381LX821M400A062 |
Aluminum Electrolytic Capacitors - Snap In 400V 820uF 35 X 63 |
|
Mfr.#: 381LX821M400A062 |
Aluminum Electrolytic Capacitors - Snap In 400V 820uF 35 X 63 |
|
Mfr.#: TN0110N3-G |
MOSFET N-CH 100V 350MA TO92-3 |
