BSC034N03LSGATMA1

BSC034N03LSGATMA1
Mfr. #:
BSC034N03LSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 100A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC034N03LSGATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
BSC034N03
embalaje
Carrete
Alias ​​de parte
BSC034N03LS BSC034N03LSGXT G SP000475948
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Polaridad del transistor
Canal N
Tags
BSC034N03, BSC034, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 3.4 mOhm 39 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0028Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Parte # Mfg. Descripción Valores Precio
BSC034N03LSGATMA1
DISTI # V72:2272_06384624
Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 10:$0.5826
  • 1:$0.6596
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.3870
BSC034N03LSGATMA1
DISTI # 27607303
Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 24:$0.5826
BSC034N03LSGXT
DISTI # BSC034N03LSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC034N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 5000:$0.3439
  • 10000:$0.3439
  • 20000:$0.3429
  • 30000:$0.3419
  • 50000:$0.3409
BSC034N03LSGATMA1
DISTI # 97Y1248
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes3279
  • 1:$0.8700
  • 10:$0.7410
  • 25:$0.6840
  • 50:$0.6260
  • 100:$0.5690
  • 250:$0.5360
  • 500:$0.5030
  • 1000:$0.3970
BSC034N03LSGATMA1.
DISTI # 27AC1073
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3440
  • 20000:$0.3430
  • 30000:$0.3420
  • 50000:$0.3410
BSC034N03LSGATMA1
DISTI # 726-BSC034N03LSGATMA
Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant
6331
  • 1:$0.8700
  • 10:$0.7410
  • 100:$0.5690
  • 500:$0.5030
  • 1000:$0.3970
  • 5000:$0.3520
BSC034N03LS G
DISTI # 726-BSC034N03LSG
Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant
246
  • 1:$0.8900
  • 10:$0.7600
  • 100:$0.5900
  • 500:$0.5200
  • 1000:$0.4100
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,57W,PG-TDSON-82534
  • 1:$0.6244
  • 3:$0.5530
  • 10:$0.4649
  • 100:$0.4167
  • 1000:$0.3880
BSC034N03LSGATMA1
DISTI # 2617420
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant
3282
  • 5:£0.6290
  • 25:£0.5670
  • 100:£0.4310
  • 250:£0.4060
  • 500:£0.3810
BSC034N03LSGATMA1
DISTI # C1S322000626320
Infineon Technologies AGMOSFETs
RoHS: Compliant
4240
  • 250:$0.4637
  • 100:$0.4689
  • 25:$0.5756
  • 10:$0.5826
BSC034N03LSGATMA1
DISTI # 2617420
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant
3279
  • 1:$1.4900
  • 10:$1.3000
  • 100:$1.0600
  • 250:$0.8940
  • 500:$0.7730
  • 1000:$0.7310
Imagen Parte # Descripción
BSC034N03LSGATMA1

Mfr.#: BSC034N03LSGATMA1

OMO.#: OMO-BSC034N03LSGATMA1

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N03LS G

Mfr.#: BSC034N03LS G

OMO.#: OMO-BSC034N03LS-G

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N06NSATMA1

Mfr.#: BSC034N06NSATMA1

OMO.#: OMO-BSC034N06NSATMA1

MOSFET MV POWER MOS
BSC034N06NS

Mfr.#: BSC034N06NS

OMO.#: OMO-BSC034N06NS

MOSFET DIFFERENTIATED MOSFETS
BSC034N03LS G

Mfr.#: BSC034N03LS G

OMO.#: OMO-BSC034N03LS-G-1190

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N03LSG

Mfr.#: BSC034N03LSG

OMO.#: OMO-BSC034N03LSG-1190

Nuevo y original
BSC034N03LSGATMA1

Mfr.#: BSC034N03LSGATMA1

OMO.#: OMO-BSC034N03LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 100A TDSON-8
BSC034N03LSGATMA1 , TDA7

Mfr.#: BSC034N03LSGATMA1 , TDA7

OMO.#: OMO-BSC034N03LSGATMA1-TDA7-1190

Nuevo y original
BSC034N06NS

Mfr.#: BSC034N06NS

OMO.#: OMO-BSC034N06NS-1190

MOSFET DIFFERENTIATED MOSFETS
BSC034N06NSATMA1

Mfr.#: BSC034N06NSATMA1

OMO.#: OMO-BSC034N06NSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 100A 8TDSON
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de BSC034N03LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,51 US$
0,51 US$
10
0,48 US$
4,83 US$
100
0,46 US$
45,75 US$
500
0,43 US$
216,05 US$
1000
0,41 US$
406,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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