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BSC034N03LSGATMA1

BSC034N03LSGATMA1
Mfr. #:
BSC034N03LSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC034N03LSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
2.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
52 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
57 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
45 S
Otoño:
4.6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.8 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28 ns
Tiempo típico de retardo de encendido:
6.9 ns
Parte # Alias:
BSC034N03LS BSC34N3LSGXT G SP000475948
Unidad de peso:
0.004205 oz
Tags
BSC034N03, BSC034, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 3.4 mOhm 39 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 57W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***ure Electronics
Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***et Japan
Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ment14 APAC
MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ure Electronics
Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 34 V 3.8 mOhm 34 nC OptiMOS™ Power Mosfet - TDSON-8
***et
Transistor MOSFET N-CH 34V 98A 8-Pin TDSON Tube
***ark
Mosfet, N-Ch, 34V, 98A, Pg-Tdson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:34V; On Resistance Rds(On):0.0032Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
***emi
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
***ment14 APAC
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
Parte # Mfg. Descripción Valores Precio
BSC034N03LSGATMA1
DISTI # V72:2272_06384624		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 10:$0.5826
  • 1:$0.6596
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.3870
BSC034N03LSGATMA1
DISTI # 27607303		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 24:$0.5826
BSC034N03LSGXT
DISTI # BSC034N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC034N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 5000:$0.3439
  • 10000:$0.3439
  • 20000:$0.3429
  • 30000:$0.3419
  • 50000:$0.3409
BSC034N03LSGATMA1
DISTI # 97Y1248		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes3279
  • 1:$0.8700
  • 10:$0.7410
  • 25:$0.6840
  • 50:$0.6260
  • 100:$0.5690
  • 250:$0.5360
  • 500:$0.5030
  • 1000:$0.3970
BSC034N03LSGATMA1.
DISTI # 27AC1073		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3440
  • 20000:$0.3430
  • 30000:$0.3420
  • 50000:$0.3410
BSC034N03LSGATMA1
DISTI # 726-BSC034N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		6331
  • 1:$0.8700
  • 10:$0.7410
  • 100:$0.5690
  • 500:$0.5030
  • 1000:$0.3970
  • 5000:$0.3520
BSC034N03LS G
DISTI # 726-BSC034N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		246
  • 1:$0.8900
  • 10:$0.7600
  • 100:$0.5900
  • 500:$0.5200
  • 1000:$0.4100
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,57W,PG-TDSON-82534
  • 1:$0.6244
  • 3:$0.5530
  • 10:$0.4649
  • 100:$0.4167
  • 1000:$0.3880
BSC034N03LSGATMA1
DISTI # 2617420		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant		3282
  • 5:£0.6290
  • 25:£0.5670
  • 100:£0.4310
  • 250:£0.4060
  • 500:£0.3810
BSC034N03LSGATMA1
DISTI # C1S322000626320		Infineon Technologies AGMOSFETs
RoHS: Compliant		4240
  • 250:$0.4637
  • 100:$0.4689
  • 25:$0.5756
  • 10:$0.5826
BSC034N03LSGATMA1
DISTI # 2617420		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant		3279
  • 1:$1.4900
  • 10:$1.3000
  • 100:$1.0600
  • 250:$0.8940
  • 500:$0.7730
  • 1000:$0.7310
Imagen Parte # Descripción
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Mfr.#: LM2664M6/NOPB

OMO.#: OMO-LM2664M6-NOPB

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Mfr.#: 352130RFT

OMO.#: OMO-352130RFT

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CPC1014NTR

Mfr.#: CPC1014NTR

OMO.#: OMO-CPC1014NTR

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0805YC474KAT2A

Mfr.#: 0805YC474KAT2A

OMO.#: OMO-0805YC474KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.47uF 16volts X7R 10%
114555P2

Mfr.#: 114555P2

OMO.#: OMO-114555P2-673

 Heavy Duty Power Connectors PP15/45 12mm X 13.5mm STAPLE
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Mfr.#: LM2664M6/NOPB

OMO.#: OMO-LM2664M6-NOPB-TEXAS-INSTRUMENTS

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105133-0001

Mfr.#: 105133-0001

OMO.#: OMO-105133-0001-393

 Conn USB RCP 5 POS 0.65mm Solder RA SMD 5 Terminal 1 Port - Tape and Reel (Alt: 1051330001)
352130RFT

Mfr.#: 352130RFT

OMO.#: OMO-352130RFT-TE-CONNECTIVITY-AMP

 Thick Film Resistors - SMD 3521 30R 1% 2W
CPC1014NTR

Mfr.#: CPC1014NTR

OMO.#: OMO-CPC1014NTR-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Solid State Relays - PCB Mount 1-Form-A 60V 400mA Solid State Relay
XAL1010-103MED

Mfr.#: XAL1010-103MED

OMO.#: OMO-XAL1010-103MED-1190

 Fixed Inductors 10uH 20% 15.5A 14.75mOhms AEC-Q200
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de BSC034N03LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,86 US$
0,86 US$
10
0,74 US$
7,41 US$
100
0,57 US$
56,90 US$
500
0,50 US$
251,50 US$
1000
0,40 US$
397,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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