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SI5513DC-T1-E3

SI5513DC-T1-E3
Mfr. #:
SI5513DC-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI5513DC-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5513DC-T1-E3 DatasheetSI5513DC-T1-E3 Datasheet (P4-P6)SI5513DC-T1-E3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
Si5513DC
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI5513DC-E3
Unidad de peso:
0.002998 oz
Tags
SI5513DC-T, SI5513DC, SI5513D, SI5513, SI551, SI55, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin Chip FET T/R
***C
Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin
***ied Electronics & Automation
MOSFET; 20V N & P CH (D-S) Complementary
***i-Key
MOSFET N/P-CH 20V 3.1A 1206-8
***ser
Dual MOSFETs 20V 4.2/2.9A
***
20V N & P CH (D-S)
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:1206-8 ChipFET ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, NP, 8-1206; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.5V; Case Style:1206-8 ChipFET; Termination Type:SMD
***ment14 APAC
MOSFET, DUAL, NP, 8-1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.1W; Transistor Case Style:1206; No. of Pins:8; Current Id Max:4.2A; Package / Case:1206-8 ChipFET; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
Parte # Mfg. Descripción Valores Precio
SI5513DC-T1-E3
DISTI # SI5513DC-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI5513DC-T1-E3
    DISTI # SI5513DC-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI5513DC-T1-E3
      DISTI # SI5513DC-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI5513DC-T1-E3
        DISTI # 70026247        		Vishay SiliconixMOSFET,20V N & P CH (D-S) Complementary
        RoHS: Compliant        		0
        • 3000:$0.5100
        • 6000:$0.5000
        • 15000:$0.4850
        • 30000:$0.4640
        • 75000:$0.4340
        SI5513DC-T1-E3
        DISTI # 781-SI5513DC-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
        RoHS: Compliant        		0
          SI5513DC-T1
          DISTI # 781-SI5513DC          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
          RoHS: Not compliant          		0
            SI5513DCT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		16060
              SI5513DC-T1-E3
              DISTI # 1470128              		Vishay IntertechnologiesMOSFET, DUAL, NP, 8-12060
              • 500:£0.2270
              • 250:£0.2520
              • 100:£0.2760
              • 10:£0.4140
              • 1:£0.5590
              SI5513DC-T1-E3
              DISTI # 1470128              		Vishay IntertechnologiesMOSFET, DUAL, NP, 8-1206
              RoHS: Compliant              		0
              • 6000:$0.3150
              • 3000:$0.3270
              • 1000:$0.3380
              • 500:$0.3580
              • 250:$0.4210
              • 100:$0.5120
              • 10:$0.6530
              • 1:$0.7890
              Imagen Parte # Descripción
              SI5513DC-T1-GE3

              Mfr.#: SI5513DC-T1-GE3

              OMO.#: OMO-SI5513DC-T1-GE3

              		 MOSFET
              SI5513DC-T1-E3

              Mfr.#: SI5513DC-T1-E3

              OMO.#: OMO-SI5513DC-T1-E3

              		 MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
              SI5513D-T1-E3

              Mfr.#: SI5513D-T1-E3

              OMO.#: OMO-SI5513D-T1-E3-1190

              		 Nuevo y original
              SI5513DC

              Mfr.#: SI5513DC

              OMO.#: OMO-SI5513DC-1190

              		 Nuevo y original
              SI5513DC-T1

              Mfr.#: SI5513DC-T1

              OMO.#: OMO-SI5513DC-T1-1190

              		 MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
              SI5513DC-T1 , MA22D3900L

              Mfr.#: SI5513DC-T1 , MA22D3900L

              OMO.#: OMO-SI5513DC-T1-MA22D3900L-1190

              		 Nuevo y original
              SI5513DC-T1-E3

              Mfr.#: SI5513DC-T1-E3

              OMO.#: OMO-SI5513DC-T1-E3-VISHAY

              		 MOSFET N/P-CH 20V 3.1A 1206-8
              SI5513DC-T1-GE3

              Mfr.#: SI5513DC-T1-GE3

              OMO.#: OMO-SI5513DC-T1-GE3-VISHAY

              		 MOSFET N/P-CH 20V 3.1A 1206-8
              SI5513DCT1E3

              Mfr.#: SI5513DCT1E3

              OMO.#: OMO-SI5513DCT1E3-1190

              		 Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
              Disponibilidad
              Valores:
              Available
              En orden:
              3000
              Ingrese la cantidad:
              El precio actual de SI5513DC-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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