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FDN359BN

FDN359BN
Mfr. #:
FDN359BN
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V N-Channel PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDN359BN Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDN359BN más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SSOT-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
2.7 A
Rds On - Resistencia de la fuente de drenaje:
46 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
500 mW (1/2 W)
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.12 mm
Longitud:
2.9 mm
Producto:
Pequeña señal MOSFET
Serie:
FDN359BN
Tipo de transistor:
1 N-Channel
Ancho:
1.4 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
7 ns
Unidad de peso:
0.001058 oz
Tags
FDN359B, FDN359, FDN35, FDN3, FDN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN359BN
***Semiconductor
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.7A, 46mΩ
***ure Electronics
N-Channel 30 V 0.046 Ohm Logic Level PowerTrench Mosfet SSOT-3
***p One Stop Global
Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R
*** Source Electronics
N-Channel Logic Level PowerTrench TM MOSFET
***ser
MOSFETs 30V N-Channel PowerTrench MOSFET
***inecomponents.com
SSOT3, NCH, LOGIC LEVEL POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 30V 2.7A 3SSOT
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2.7mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.046ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V
***ment14 APAC
N CHANNEL MOSFET, 30V, 2.7mA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***nell
MOSFET, CA-N, 30V 2,7A, SUPERSOT-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.026ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:500mW; Modello Case Transistor:SuperSOT; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDN359BN
DISTI # V72:2272_07705575		ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER4990
  • 3000:$0.1140
  • 1000:$0.1321
  • 500:$0.1529
  • 250:$0.1699
  • 100:$0.1767
  • 25:$0.2924
  • 10:$0.3249
  • 1:$0.4275
FDN359BN
DISTI # FDN359BNOSCT-ND		ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10252In Stock
  • 1000:$0.1572
  • 500:$0.2096
  • 100:$0.3057
  • 10:$0.4450
  • 1:$0.5700
FDN359BN
DISTI # FDN359BNOSDKR-ND		ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10252In Stock
  • 1000:$0.1572
  • 500:$0.2096
  • 100:$0.3057
  • 10:$0.4450
  • 1:$0.5700
FDN359BN
DISTI # FDN359BNOSTR-ND		ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.1399
FDN359BN
DISTI # 19877647		ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER27000
  • 3000:$0.0736
FDN359BN
DISTI # 30677137		ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER18000
  • 3000:$0.1390
FDN359BN
DISTI # 29055638		ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER4990
  • 3000:$0.1140
  • 1000:$0.1321
  • 500:$0.1529
  • 250:$0.1699
  • 100:$0.1767
  • 75:$0.2924
FDN359BN
DISTI # FDN359BN		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€0.1659
  • 6000:€0.1289
  • 12000:€0.1059
  • 18000:€0.0889
  • 30000:€0.0829
FDN359BN
DISTI # FDN359BN		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.0909
  • 12000:$0.0909
  • 18000:$0.0899
  • 30000:$0.0889
  • 60000:$0.0859
FDN359BN
DISTI # FDN359BN		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    FDN359BN_F095
    DISTI # FDN359BN-F095    		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: FDN359BN-F095)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      FDN359BN_F095
      DISTI # FDN359BN-F095      		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: FDN359BN-F095)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
        FDN359BN
        DISTI # 04M9100        		ON SemiconductorN CHANNEL MOSFET, 30V, 2.7mA, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes0
        • 1:$0.1040
        • 9000:$0.1010
        • 24000:$0.0970
        FDN359BN
        DISTI # 46AC0805        		ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes12728
        • 1:$0.4500
        • 10:$0.3420
        • 25:$0.2900
        • 50:$0.2380
        • 100:$0.1860
        • 250:$0.1700
        • 500:$0.1550
        • 1000:$0.1390
        FDN359BN
        DISTI # 6710453P        		ON SemiconductorMOSFET N-CHANNEL 30V 2.7A SUPERSOT3, RL16175
        • 100:£0.0940
        • 200:£0.0900
        FDN359BN
        DISTI # 6710453        		ON SemiconductorMOSFET N-CHANNEL 30V 2.7A SUPERSOT3, PK1010
        • 5:£0.4000
        • 100:£0.0940
        • 200:£0.0900
        FDN359BN
        DISTI # C1S226600700223        		ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R27000
        • 12000:$0.0958
        • 6000:$0.1150
        • 3000:$0.1250
        FDN359BN
        DISTI # XSFP00000136571        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		24228
        • 3000:$0.1533
        • 24228:$0.1438
        FDN359BN
        DISTI # 2825184        		ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant        		13228
        • 5:$0.4520
        • 25:$0.3870
        • 100:$0.2640
        • 250:$0.2170
        • 500:$0.1780
        • 1000:$0.1640
        • 5000:$0.1550
        FDN359BN"F095
        DISTI # 2345399        		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.026OHM, 2.7A,
        RoHS: Compliant        		0
        • 1:$0.9710
        • 10:$0.8090
        • 25:$0.4050
        • 100:$0.2940
        • 250:$0.2310
        • 500:$0.1870
        • 1000:$0.1740
        • 2500:$0.1620
        FDN359BN-F095
        DISTI # 2322594        		ON SemiconductorMOSFET, N CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant        		0
        • 1:$0.7050
        • 10:$0.5390
        • 100:$0.2780
        • 1000:$0.2040
        • 3000:$0.1700
        • 9000:$0.1560
        • 24000:$0.1480
        • 45000:$0.1410
        FDN359BN
        DISTI # 2825184        		ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant        		13623
        • 5:£0.3000
        • 25:£0.2870
        • 100:£0.1450
        • 250:£0.1440
        • 500:£0.1180
        Imagen Parte # Descripción
        IS25LP128F-JKLE-TR

        Mfr.#: IS25LP128F-JKLE-TR

        OMO.#: OMO-IS25LP128F-JKLE-TR

        		 NOR Flash 128M 2.3-3.6V 166Mhz Serial NOR Flash
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        Mfr.#: MBT3904DW1T1G

        OMO.#: OMO-MBT3904DW1T1G

        		 Bipolar Transistors - BJT 200mA 60V Dual NPN
        SISS67DN-T1-GE3

        Mfr.#: SISS67DN-T1-GE3

        OMO.#: OMO-SISS67DN-T1-GE3

        		 MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
        ES2DA-13-F

        Mfr.#: ES2DA-13-F

        OMO.#: OMO-ES2DA-13-F

        		 Rectifiers RECTIFIER SUPER FAST "F" LEAD FREE
        MBRS2040LT3G

        Mfr.#: MBRS2040LT3G

        OMO.#: OMO-MBRS2040LT3G

        		 Schottky Diodes & Rectifiers 2A 40V Low Vf
        SM74611KTTR

        Mfr.#: SM74611KTTR

        OMO.#: OMO-SM74611KTTR

        		 Power Switch ICs - Power Distribution Smart Bypass Diode
        ERJ-3EKF1001V

        Mfr.#: ERJ-3EKF1001V

        OMO.#: OMO-ERJ-3EKF1001V

        		 Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
        SISS67DN-T1-GE3

        Mfr.#: SISS67DN-T1-GE3

        OMO.#: OMO-SISS67DN-T1-GE3-VISHAY

        		 MOSFET P-CHAN 30V POWERPAK 1212-
        ES2DA-13-F

        Mfr.#: ES2DA-13-F

        OMO.#: OMO-ES2DA-13-F-DIODES

        		 DIODE GEN PURP 200V 2A SMA
        SM74611KTTR

        Mfr.#: SM74611KTTR

        OMO.#: OMO-SM74611KTTR-TEXAS-INSTRUMENTS

        		 Gate Drivers Smart Bypass Diode
        Disponibilidad
        Valores:
        27
        En orden:
        2010
        Ingrese la cantidad:
        El precio actual de FDN359BN es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,44 US$
        0,44 US$
        10
        0,34 US$
        3,42 US$
        100
        0,19 US$
        18,60 US$
        1000
        0,14 US$
        139,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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