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CXDM1002N TR

CXDM1002N TR
Mfr. #:
CXDM1002N TR
Fabricante:
Central Semiconductor
Descripción:
Darlington Transistors MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CXDM1002N TR Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
CXDM1002N TR más información
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
CXDM10
embalaje
Carrete
Unidad de peso
0.004603 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-89-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
2 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.1 V
Resistencia a la fuente de desagüe de Rds
140 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
50 ns
Tiempo de retardo de encendido típico
32 ns
Qg-Gate-Charge
6 nC
Modo de canal
Mejora
Tags
CXDM, CXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R
***i-Key
MOSFET N-CH 100V 2A SOT-89
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descripción Valores Precio
CXDM1002N TR
DISTI # CXDM1002NCT-ND		Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2340In Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
CXDM1002N TR
DISTI # CXDM1002NDKR-ND		Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2340In Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
CXDM1002N TR
DISTI # CXDM1002NTR-ND		Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$0.4950
CXDM1002N TR
DISTI # CXDM1002N TR		Central Semiconductor CorpN-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM1002N TR)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.3939
  • 4000:$0.3769
  • 6000:$0.3679
  • 10000:$0.3589
  • 20000:$0.3429
CXDM1002N TR
DISTI # 610-CXDM1002NTR		Central Semiconductor CorpMOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
RoHS: Compliant		2237
  • 1:$0.9500
  • 10:$0.7750
  • 100:$0.6460
  • 500:$0.4990
  • 1000:$0.4500
  • 2000:$0.3990
  • 10000:$0.3850
Imagen Parte # Descripción
CXDM1002N TR

Mfr.#: CXDM1002N TR

OMO.#: OMO-CXDM1002N-TR

 MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
CXDM1002N

Mfr.#: CXDM1002N

OMO.#: OMO-CXDM1002N-1190

 Nuevo y original
CXDM1002N TR

Mfr.#: CXDM1002N TR

OMO.#: OMO-CXDM1002N-TR-CENTRAL-SEMICONDUCTOR

 Darlington Transistors MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de CXDM1002N TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,51 US$
0,51 US$
10
0,49 US$
4,89 US$
100
0,46 US$
46,29 US$
500
0,44 US$
218,60 US$
1000
0,41 US$
411,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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