FDP8860

Mfr. #:: FDP8860
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 30V 80A TO-220AB
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDP8860 Ficha de datos
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Más información:: FDP8860 más información

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Tags: FDP88, FDP8, FDP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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FDP8860 Descripción

***emi: N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ

***ure Electronics: N-Channel 30 V 2.5 mOhm PowerTrench Mosfet - TO-220

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:1.6V; Threshold Voltage Vgs:20V; Msl:- Rohs Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:254W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:9200pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:2.5mohm; On State Resistance Typ:1.9mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:254W; Power Dissipation Pd:254W; Pulse Current Idm:556A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

FDP8860 Más información

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDP8860 DISTI # V99:2348_06359402	ON Semiconductor	Trans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail	553	10000:$1.0623 5000:$1.1040 2500:$1.1678 1000:$1.2568 500:$1.5041 100:$1.7210 10:$2.1434 1:$2.7663
FDP8860 DISTI # V36:1790_06359402	ON Semiconductor	Trans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail	0	800000:$0.9701 400000:$0.9723 80000:$1.1320 8000:$1.3960 800:$1.4400
FDP8860 DISTI # FDP8860-ND	ON Semiconductor	MOSFET N-CH 30V 80A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	824In Stock	5600:$1.1773 3200:$1.2226 800:$1.5849 100:$1.9290 25:$2.2640 10:$2.4000 1:$2.6700
FDP8860 DISTI # 31325261	ON Semiconductor	Trans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail	553	6:$2.7663
FDP8860 DISTI # FDP8860	ON Semiconductor	Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8860) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 650	1000:€0.9499 500:€0.9849 100:€1.0229 50:€1.0639 25:€1.1079 10:€1.2089 1:€1.3299
FDP8860 DISTI # FDP8860	ON Semiconductor	Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8860) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$0.9259 4800:$0.9494 3200:$0.9615 1600:$0.9740 800:$0.9804
FDP8860 DISTI # FDP8860	ON Semiconductor	Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP8860) RoHS: Compliant Min Qty: 269 Container: Bulk	Americas - 0	807:$1.0900 1345:$1.0900 2690:$1.0900 269:$1.1900 538:$1.1900
FDP8860 DISTI # FDP8860	ON Semiconductor	Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8860) RoHS: Compliant Min Qty: 800 Container: Tube	Asia - 0	40000:$1.2295 20000:$1.2500 8000:$1.2931 4000:$1.3393 2400:$1.3889 1600:$1.4423 800:$1.5000
FDP8860. DISTI # 15AC2934	Fairchild Semiconductor Corporation	Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:1.6V,Threshold Voltage Vgs:20V,Power Dissipation Pd:254W,No. of Pins:3Pins RoHS Compliant: Yes	0	8000:$0.9260 4800:$0.9500 3200:$0.9620 1600:$0.9740 1:$0.9810
FDP8860 DISTI # 512-FDP8860	ON Semiconductor	MOSFET 30V N-Channel PowerTrench MOSFET RoHS: Compliant	779	1:$2.5400 10:$2.1600 100:$1.7300 500:$1.5100 1000:$1.2600 2500:$1.1700 5000:$1.1300
FDP8860	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	37405	1000:$1.2200 500:$1.2900 100:$1.3400 25:$1.4000 1:$1.5100
FDP8860	ON Semiconductor		8300	1:$2.9200 100:$1.8600 500:$1.5400 1000:$1.4100
FDP8860 DISTI # XSKDRABV0037642	ON SEMICONDUCTOR	RoHS: Compliant	640 in Stock0 on Order	640:$1.4000 333:$1.5000
FDP8860 DISTI # 1324804	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	5000:$1.7400 2500:$1.8000 1000:$1.9400 500:$2.3300 100:$2.6700 10:$3.3300 1:$3.9100

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1: ~~0,00 US$~~; ~~0,00 US$~~

10: ~~0,00 US$~~; ~~0,00 US$~~

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500: ~~0,00 US$~~; ~~0,00 US$~~

1000: ~~0,00 US$~~; ~~0,00 US$~~

Empezar con

FDP88 21
FDP8 46
FDP 605

FDP8860

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes