IXFN36N100

IXFN36N100
Mfr. #:
IXFN36N100
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET 1KV 36A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN36N100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Módulo
Serie
IXFN36N100
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
SOT-227-4
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente dual única
Tipo transistor
1 N-Channel
Disipación de potencia Pd
700 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
30 ns
Hora de levantarse
55 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
36 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Resistencia a la fuente de desagüe de Rds
240 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
110 ns
Tiempo de retardo de encendido típico
41 ns
Transconductancia directa-Mín.
40 S
Modo de canal
Mejora
Tags
IXFN36N, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 1000 Vds 240 mOhm 700 W Power Mosfet - SOT-227B
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-227B Polarity: N Variants: Enhancement mode Power dissipation: 700 W
***ark
Mosfet, N, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:36A; On Resistance Rds(On):0.24Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IXFN36N100
DISTI # IXFN36N100-ND
IXYS CorporationMOSFET N-CH 1KV 36A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
425In Stock
  • 100:$43.6650
  • 30:$46.5760
  • 10:$50.3600
  • 1:$53.8500
IXFN36N100
DISTI # 14J1688
IXYS CorporationMOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):0.24ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:700W RoHS Compliant: Yes19
  • 100:$43.6600
  • 50:$45.2000
  • 25:$46.5800
  • 10:$50.3600
  • 5:$51.9600
  • 1:$53.8500
IXFN36N100IXYS CorporationSingle N-Channel 1000 Vds 240 mOhm 700 W Power Mosfet - SOT-227B
RoHS: Compliant
3Tube
  • 1:$42.8100
  • 2:$40.8500
  • 5:$38.4000
  • 10:$36.6500
  • 25:$34.4500
IXFN36N100
DISTI # 747-IXFN36N100
IXYS CorporationMOSFET 1KV 36A
RoHS: Compliant
0
  • 1:$53.8500
  • 5:$51.9600
  • 10:$50.3600
  • 25:$46.5800
  • 50:$45.2000
  • 100:$43.6600
IXFN36N100
DISTI # 193795
IXYS CorporationMOSFET N-CHANNEL 1KV 36A SOT227B, EA174
  • 50:£31.7700
  • 20:£32.4200
  • 10:£33.5900
  • 5:£35.1500
  • 1:£39.0600
IXFN36N100
DISTI # 4905556
IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant
19
  • 100:$69.1000
  • 30:$73.7000
  • 10:$79.6900
  • 1:$85.2100
IXFN36N100
DISTI # 4905556
IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant
19
  • 50:£32.3300
  • 10:£36.9600
  • 5:£41.2400
  • 1:£42.7300
IXFN36N100
DISTI # XSFP00000002803
IXYS Corporation 
RoHS: Compliant
30 in Stock0 on Order
  • 30:$54.1500
  • 10:$66.6500
Imagen Parte # Descripción
IXFN38N100P

Mfr.#: IXFN38N100P

OMO.#: OMO-IXFN38N100P

MOSFET 38 Amps 1000V
IXFN360N10T

Mfr.#: IXFN360N10T

OMO.#: OMO-IXFN360N10T

MOSFET 360 Amps 100V
IXFN32N80P

Mfr.#: IXFN32N80P

OMO.#: OMO-IXFN32N80P

MOSFET 29 Amps 800V 0.27 Rds
IXFN320N17T2

Mfr.#: IXFN320N17T2

OMO.#: OMO-IXFN320N17T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFN300N10P

Mfr.#: IXFN300N10P

OMO.#: OMO-IXFN300N10P

MOSFET Polar Power MOSFET HiPerFET
IXFN34N80

Mfr.#: IXFN34N80

OMO.#: OMO-IXFN34N80

MOSFET 34 Amps 800V 0.24 Rds
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

MOSFET N-CH 1000V 27A SOT-227B
IXFN30N110P

Mfr.#: IXFN30N110P

OMO.#: OMO-IXFN30N110P-IXYS-CORPORATION

MOSFET N-CH 1100V 25A SOT-227B
IXFN36N60

Mfr.#: IXFN36N60

OMO.#: OMO-IXFN36N60-IXYS-CORPORATION

MOSFET 600V 36A
IXFN32N80P

Mfr.#: IXFN32N80P

OMO.#: OMO-IXFN32N80P-IXYS-CORPORATION

IGBT Transistors MOSFET 29 Amps 800V 0.27 Rds
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de IXFN36N100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
60,28 US$
60,28 US$
10
57,27 US$
572,71 US$
100
54,26 US$
5 425,65 US$
500
51,24 US$
25 621,15 US$
1000
48,23 US$
48 228,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
Top