IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1
Mfr. #:
IPW65R110CFDAFKSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R110CFDAFKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPW65R110CFDAFKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPW65R110
embalaje
Tubo
Alias ​​de parte
IPW65R110CFDA IPW65R110CFDAXK SP000895236
Unidad de peso
1.340411 oz
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
31.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Resistencia a la fuente de desagüe de Rds
110 mOhms
Polaridad del transistor
Canal N
Tags
IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 650V 31.2A
***i-Key
MOSFET N-CH 650V 31.2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
219In Stock
  • 720:$5.6983
  • 240:$6.6906
  • 10:$8.0130
  • 1:$8.8400
IPW65R110CFDAFKSA1
DISTI # SP000895236
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 48
  • 1:€4.4900
  • 10:€4.0900
  • 25:€3.9900
  • 50:€3.7900
  • 100:€3.6900
  • 500:€3.4900
  • 1000:€3.2900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$4.2900
  • 480:$4.0900
  • 960:$3.9900
  • 1440:$3.7900
  • 2400:$3.7900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDA
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA)
RoHS: Compliant
Min Qty: 240
Container: Tube
Asia - 0
    IPW65R110CFDAFKSA1
    DISTI # 13AC9100
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes15
    • 100:$5.3600
    • 50:$5.7700
    • 25:$6.1700
    • 10:$6.4700
    • 1:$7.1600
    IPW65R110CFDAFKSA1
    DISTI # 726-IPW65R110CFDAFKS
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant
    348
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDA
    DISTI # 726-IPW65R110CFDA
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant
    263
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDAFKSA1
    DISTI # 2726081
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant
    15
    • 720:$8.1800
    • 240:$9.7600
    • 10:$11.8700
    • 1:$13.1800
    IPW65R110CFDAFKSA1
    DISTI # XSKDRABV0042852
    Infineon Technologies AG 
    RoHS: Compliant
    192
    • 192:$5.3600
    • 87:$5.7400
    IPW65R110CFDAFKSA1
    DISTI # 2726081
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant
    15
    • 100:£4.1000
    • 50:£4.4100
    • 10:£4.7100
    • 5:£5.4700
    • 1:£6.0000
    Imagen Parte # Descripción
    IPW65R110CFD

    Mfr.#: IPW65R110CFD

    OMO.#: OMO-IPW65R110CFD

    MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1

    MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1

    MOSFET N-Ch 650V 31.2A TO247-3
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2

    MOSFET
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2-INFINEON-TECHNOLOGIES

    HIGH POWER_LEGACY
    IPW65R110CFD , 2SJ288

    Mfr.#: IPW65R110CFD , 2SJ288

    OMO.#: OMO-IPW65R110CFD-2SJ288-1190

    Nuevo y original
    IPW65R110CFD 65F6110

    Mfr.#: IPW65R110CFD 65F6110

    OMO.#: OMO-IPW65R110CFD-65F6110-1190

    Nuevo y original
    IPW65R110CFDA , 2SJ289

    Mfr.#: IPW65R110CFDA , 2SJ289

    OMO.#: OMO-IPW65R110CFDA-2SJ289-1190

    Nuevo y original
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 650V 31.2A TO247
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IPW65R110CFDAFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,68 US$
    5,68 US$
    10
    5,40 US$
    54,01 US$
    100
    5,12 US$
    511,65 US$
    500
    4,83 US$
    2 416,15 US$
    1000
    4,55 US$
    4 548,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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