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IPW65R110CFDFKSA1

IPW65R110CFDFKSA1
Mfr. #:
IPW65R110CFDFKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R110CFDFKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPW65R110CFDFKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
31.2 A
Rds On - Resistencia de la fuente de drenaje:
99 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
118 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
277.8 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS CFD2
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
IPW65R110CFD IPW65R11CFDXK SP000895232
Unidad de peso:
1.340411 oz
Tags
IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 110 mOhm 118 nC CoolMOS™ Power Mosfet - TO-247-3
***Components
N-Channel MOSFET, 31 A, 700 V, 3-Pin TO-247 Infineon IPW65R110CFDFKSA1
***p One Stop Global
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247
***et
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ark
MOSFET, N CH, 700V, 31.2A, TO-247-3
***ronik
CoolMOS 650V 31A 110mOhm TO247
***i-Key
HIGH POWER_LEGACY
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 700V, 31.2A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$4.0406
  • 720:$4.7086
  • 240:$5.7105
  • 10:$6.8670
  • 1:$7.6300
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R110CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$3.2900
  • 480:$3.1900
  • 960:$3.0900
  • 1440:$2.9900
  • 2400:$2.8900
IPW65R110CFDFKSA1
DISTI # IPW65R110CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: IPW65R110CFD)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IPW65R110CFDFKSA1
    DISTI # SP000895232    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: SP000895232)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€6.5000
    • 10:€4.3500
    • 100:€3.6800
    • 250:€3.5000
    • 500:€3.1000
    • 1000:€2.4300
    IPW65R110CFDFKSA1
    DISTI # 85X6043    		Infineon Technologies AGMOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V , RoHS Compliant: Yes0
    • 1:$6.1900
    • 10:$5.2600
    • 25:$5.0300
    • 50:$4.7900
    • 100:$4.5600
    IPW65R110CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		62
    • 1000:$3.4600
    • 500:$3.6400
    • 100:$3.7900
    • 25:$3.9500
    • 1:$4.2500
    IPW65R110CFDFKSA1
    DISTI # 726-IPW65R110CFDFKSA    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		36
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFD
    DISTI # 726-IPW65R110CFD    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		0
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFDFKSA1
    DISTI # 8268241P    		Infineon Technologies AGMOSFET N-CH 650V 31A COOLMOS CFD2 TO247, TU42
    • 10:£4.7800
    • 20:£4.3900
    IPW65R110CFDFKSA1
    DISTI # IPW65R110CFDFKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,31.2A,277.8W,PG-TO247-385
    • 1:$7.8800
    • 3:$6.7800
    • 10:$5.4500
    • 30:$4.7300
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		0
    • 1:$9.8000
    • 10:$8.3300
    • 100:$7.2200
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		3
    • 1:£5.2100
    • 10:£3.9000
    • 100:£3.4800
    • 250:£3.3700
    • 500:£3.2600
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    Disponibilidad
    Valores:
    244
    En orden:
    2227
    Ingrese la cantidad:
    El precio actual de IPW65R110CFDFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,18 US$
    6,18 US$
    10
    5,25 US$
    52,50 US$
    100
    4,55 US$
    455,00 US$
    250
    4,32 US$
    1 080,00 US$
    500
    3,87 US$
    1 935,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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